JPS6113661A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPS6113661A
JPS6113661A JP59133202A JP13320284A JPS6113661A JP S6113661 A JPS6113661 A JP S6113661A JP 59133202 A JP59133202 A JP 59133202A JP 13320284 A JP13320284 A JP 13320284A JP S6113661 A JPS6113661 A JP S6113661A
Authority
JP
Japan
Prior art keywords
region
crystal semiconductor
semiconductor region
single crystal
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59133202A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0228270B2 (enExample
Inventor
Akikazu Oono
晃計 大野
Katsutoshi Izumi
泉　勝俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59133202A priority Critical patent/JPS6113661A/ja
Publication of JPS6113661A publication Critical patent/JPS6113661A/ja
Publication of JPH0228270B2 publication Critical patent/JPH0228270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59133202A 1984-06-29 1984-06-29 半導体装置およびその製造方法 Granted JPS6113661A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59133202A JPS6113661A (ja) 1984-06-29 1984-06-29 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59133202A JPS6113661A (ja) 1984-06-29 1984-06-29 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6113661A true JPS6113661A (ja) 1986-01-21
JPH0228270B2 JPH0228270B2 (enExample) 1990-06-22

Family

ID=15099114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59133202A Granted JPS6113661A (ja) 1984-06-29 1984-06-29 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6113661A (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060035A (en) * 1989-07-13 1991-10-22 Mitsubishi Denki Kabushiki Kaisha Silicon-on-insulator metal oxide semiconductor device having conductive sidewall structure
WO2009016880A1 (ja) * 2007-08-02 2009-02-05 Unisantis Electronics (Japan) Ltd. 半導体装置
WO2009102062A1 (ja) * 2008-02-15 2009-08-20 Unisantis Electronics (Japan) Ltd. 半導体装置及びその製造方法
WO2009102060A1 (ja) * 2008-02-15 2009-08-20 Unisantis Electronics (Japan) Ltd. 半導体装置とその製造方法
WO2009102059A1 (ja) * 2008-02-15 2009-08-20 Unisantis Electronics (Japan) Ltd. 半導体装置の製造方法
WO2009102061A1 (ja) * 2008-02-15 2009-08-20 Unisantis Electronics (Japan) Ltd. 半導体装置の製造方法
US8158468B2 (en) 2008-02-15 2012-04-17 Unisantis Electronics Singapore Pte Ltd. Production method for surrounding gate transistor semiconductor device
US8163605B2 (en) 2008-02-15 2012-04-24 Unisantis Electronics Singapore Pte Ltd. Production method for semiconductor device
EP2061075A4 (en) * 2007-05-30 2012-06-13 Unisantis Elect Singapore Pte SEMICONDUCTOR DEVICE
US8211758B2 (en) 2008-02-15 2012-07-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and method of producing the same
US8241976B2 (en) 2008-02-15 2012-08-14 Unisantis Electronics Singapore Pte Ltd. Semiconductor surrounding gate transistor device and production method therefor
US8372713B2 (en) 2008-01-29 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8507995B2 (en) 2009-09-16 2013-08-13 Unisantis Electronics Singapore Pte Ltd. Semiconductor memory device
JP2015188115A (ja) * 2008-02-15 2015-10-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置及びその製造方法
US9748244B2 (en) 2011-12-19 2017-08-29 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9806163B2 (en) 2011-12-19 2017-10-31 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device having an nMOS SGT and a pMOS SGT

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935464A (ja) * 1982-08-24 1984-02-27 Toshiba Corp 相補型ｍｏｓ半導体装置及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935464A (ja) * 1982-08-24 1984-02-27 Toshiba Corp 相補型ｍｏｓ半導体装置及びその製造方法

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060035A (en) * 1989-07-13 1991-10-22 Mitsubishi Denki Kabushiki Kaisha Silicon-on-insulator metal oxide semiconductor device having conductive sidewall structure
EP2061075A4 (en) * 2007-05-30 2012-06-13 Unisantis Elect Singapore Pte SEMICONDUCTOR DEVICE
US7919990B2 (en) 2007-08-02 2011-04-05 Unisantis Electronics (Japan) Ltd. Semiconductor device
WO2009016880A1 (ja) * 2007-08-02 2009-02-05 Unisantis Electronics (Japan) Ltd. 半導体装置
JP2009038226A (ja) * 2007-08-02 2009-02-19 Unisantis Electronics Japan Ltd 半導体装置
KR101128117B1 (ko) 2007-08-02 2012-07-12 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 장치
US8372713B2 (en) 2008-01-29 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8178399B1 (en) 2008-02-15 2012-05-15 Unisantis Electronics Singapore Pte Ltd. Production method for semiconductor device
US8241976B2 (en) 2008-02-15 2012-08-14 Unisantis Electronics Singapore Pte Ltd. Semiconductor surrounding gate transistor device and production method therefor
WO2009110049A1 (ja) * 2008-02-15 2009-09-11 日本ユニサンティスエレクトロニクス株式会社 半導体装置とその製造方法
WO2009110050A1 (ja) * 2008-02-15 2009-09-11 日本ユニサンティスエレクトロニクス株式会社 半導体装置の製造方法
WO2009102061A1 (ja) * 2008-02-15 2009-08-20 Unisantis Electronics (Japan) Ltd. 半導体装置の製造方法
US8158468B2 (en) 2008-02-15 2012-04-17 Unisantis Electronics Singapore Pte Ltd. Production method for surrounding gate transistor semiconductor device
US8163605B2 (en) 2008-02-15 2012-04-24 Unisantis Electronics Singapore Pte Ltd. Production method for semiconductor device
WO2009101704A1 (ja) * 2008-02-15 2009-08-20 Unisantis Electronics (Japan) Ltd. 半導体装置の製造方法
WO2009102059A1 (ja) * 2008-02-15 2009-08-20 Unisantis Electronics (Japan) Ltd. 半導体装置の製造方法
US8211758B2 (en) 2008-02-15 2012-07-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and method of producing the same
WO2009102060A1 (ja) * 2008-02-15 2009-08-20 Unisantis Electronics (Japan) Ltd. 半導体装置とその製造方法
WO2009110048A1 (ja) * 2008-02-15 2009-09-11 日本ユニサンティスエレクトロニクス株式会社 半導体装置及びその製造方法
CN101946330B (zh) 2008-02-15 2012-10-17 新加坡优尼山帝斯电子私人有限公司 半导体器件的制造方法
WO2009102062A1 (ja) * 2008-02-15 2009-08-20 Unisantis Electronics (Japan) Ltd. 半導体装置及びその製造方法
US8395208B2 (en) 2008-02-15 2013-03-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and method of producing the same
JP2016042603A (ja) * 2008-02-15 2016-03-31 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法
EP2244304A4 (en) * 2008-02-15 2013-10-09 Unisantis Elect Singapore Pte SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
JP2015188115A (ja) * 2008-02-15 2015-10-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置及びその製造方法
US8507995B2 (en) 2009-09-16 2013-08-13 Unisantis Electronics Singapore Pte Ltd. Semiconductor memory device
US9748244B2 (en) 2011-12-19 2017-08-29 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9806163B2 (en) 2011-12-19 2017-10-31 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device having an nMOS SGT and a pMOS SGT

Also Published As

Publication number Publication date
JPH0228270B2 (enExample) 1990-06-22

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