JPS61124566A - スパツタリング用Ａｌ−Ｓｉ系合金タ−ゲツト板材の製造法 - Google Patents

スパツタリング用Ａｌ−Ｓｉ系合金タ−ゲツト板材の製造法

Info

Publication number
JPS61124566A
JPS61124566A JP24419484A JP24419484A JPS61124566A JP S61124566 A JPS61124566 A JP S61124566A JP 24419484 A JP24419484 A JP 24419484A JP 24419484 A JP24419484 A JP 24419484A JP S61124566 A JPS61124566 A JP S61124566A
Authority
JP
Japan
Prior art keywords
plate material
forging
cut
sputtering
target plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24419484A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6348946B2 (enrdf_load_stackoverflow
Inventor
Hideaki Yoshida
秀昭 吉田
Tateaki Sahira
佐平　健彰
Masaki Morikawa
正樹 森川
Terushi Mishima
昭史 三島
Akira Mori
暁 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP24419484A priority Critical patent/JPS61124566A/ja
Publication of JPS61124566A publication Critical patent/JPS61124566A/ja
Publication of JPS6348946B2 publication Critical patent/JPS6348946B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Forging (AREA)
  • Physical Vapour Deposition (AREA)
JP24419484A 1984-11-19 1984-11-19 スパツタリング用Ａｌ−Ｓｉ系合金タ−ゲツト板材の製造法 Granted JPS61124566A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24419484A JPS61124566A (ja) 1984-11-19 1984-11-19 スパツタリング用Ａｌ−Ｓｉ系合金タ−ゲツト板材の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24419484A JPS61124566A (ja) 1984-11-19 1984-11-19 スパツタリング用Ａｌ−Ｓｉ系合金タ−ゲツト板材の製造法

Publications (2)

Publication Number Publication Date
JPS61124566A true JPS61124566A (ja) 1986-06-12
JPS6348946B2 JPS6348946B2 (enrdf_load_stackoverflow) 1988-10-03

Family

ID=17115170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24419484A Granted JPS61124566A (ja) 1984-11-19 1984-11-19 スパツタリング用Ａｌ−Ｓｉ系合金タ−ゲツト板材の製造法

Country Status (1)

Country Link
JP (1) JPS61124566A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62297464A (ja) * 1986-06-16 1987-12-24 Seiko Epson Corp スパツタリング用タ−ゲツトの製造方法
JPS6333563A (ja) * 1986-07-25 1988-02-13 Tanaka Kikinzoku Kogyo Kk スパツタリング用Ｐｔ−Ｎｉ合金タ−ゲツトの製造方法
JPS63238268A (ja) * 1987-03-27 1988-10-04 Hitachi Ltd スパツタリング用タ−ゲツトの製造法
FR2664618A1 (fr) * 1990-07-10 1992-01-17 Pechiney Aluminium Procede de fabrication de cathodes pour pulverisation cathodique a base d'aluminium de tres haute purete.
JPH10330927A (ja) * 1997-06-05 1998-12-15 Riyouka Massey Kk アルミニウム合金製スパッタリングターゲット材
US5906717A (en) * 1994-04-28 1999-05-25 Sumitomo Chemical Company, Limited Sputtering target of single crystal aluminum alloy
WO2002086184A1 (fr) * 2001-04-16 2002-10-31 Nikko Materials Company, Limited Cible de pulverisation d'alliage de manganese et procede de production associe
WO2004027109A1 (ja) * 2002-09-20 2004-04-01 Nikko Materials Co., Ltd. タンタルスパッタリングターゲット及びその製造方法
EP1447458A3 (de) * 2002-11-14 2004-08-25 W.C. Heraeus GmbH & Co. KG Verfahren zum Herstellen eines Sputtertargets aus einer Si-Basislegierung, Sputtertarget sowie dessen Verwendung
JP2007291522A (ja) * 2001-04-16 2007-11-08 Nikko Kinzoku Kk マンガン合金スパッタリングターゲット
US8349249B2 (en) 2003-02-10 2013-01-08 Heraeus Precious Metals Gmbh & Co. Kg Metal alloy for medical devices and implants
CN104451566A (zh) * 2014-12-17 2015-03-25 重庆大学 一种高纯铝硅靶材的制备方法
CN113897566A (zh) * 2021-09-27 2022-01-07 宁波江丰电子材料股份有限公司 一种高纯铝靶材的制备方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62297464A (ja) * 1986-06-16 1987-12-24 Seiko Epson Corp スパツタリング用タ−ゲツトの製造方法
JPS6333563A (ja) * 1986-07-25 1988-02-13 Tanaka Kikinzoku Kogyo Kk スパツタリング用Ｐｔ−Ｎｉ合金タ−ゲツトの製造方法
JPS63238268A (ja) * 1987-03-27 1988-10-04 Hitachi Ltd スパツタリング用タ−ゲツトの製造法
FR2664618A1 (fr) * 1990-07-10 1992-01-17 Pechiney Aluminium Procede de fabrication de cathodes pour pulverisation cathodique a base d'aluminium de tres haute purete.
US5906717A (en) * 1994-04-28 1999-05-25 Sumitomo Chemical Company, Limited Sputtering target of single crystal aluminum alloy
US5988262A (en) * 1994-04-28 1999-11-23 Sumitomo Chemical Company, Limited Sputtering target of single crystal aluminum alloy and method for producing the same
JPH10330927A (ja) * 1997-06-05 1998-12-15 Riyouka Massey Kk アルミニウム合金製スパッタリングターゲット材
JP2007291522A (ja) * 2001-04-16 2007-11-08 Nikko Kinzoku Kk マンガン合金スパッタリングターゲット
US7229510B2 (en) 2001-04-16 2007-06-12 Nippon Mining & Metals, Co., Ltd. Manganese alloy sputtering target and method for producing the same
WO2002086184A1 (fr) * 2001-04-16 2002-10-31 Nikko Materials Company, Limited Cible de pulverisation d'alliage de manganese et procede de production associe
US7713364B2 (en) 2001-04-16 2010-05-11 Nippon Mining & Metals Co., Ltd. Manganese alloy sputtering target and method for producing the same
WO2004027109A1 (ja) * 2002-09-20 2004-04-01 Nikko Materials Co., Ltd. タンタルスパッタリングターゲット及びその製造方法
JP2004107758A (ja) * 2002-09-20 2004-04-08 Nikko Materials Co Ltd タンタルスパッタリングターゲット及びその製造方法
EP1447458A3 (de) * 2002-11-14 2004-08-25 W.C. Heraeus GmbH & Co. KG Verfahren zum Herstellen eines Sputtertargets aus einer Si-Basislegierung, Sputtertarget sowie dessen Verwendung
US8349249B2 (en) 2003-02-10 2013-01-08 Heraeus Precious Metals Gmbh & Co. Kg Metal alloy for medical devices and implants
US8403980B2 (en) 2003-02-10 2013-03-26 Heraeus Materials Technology Gmbh & Co. Kg Metal alloy for medical devices and implants
CN104451566A (zh) * 2014-12-17 2015-03-25 重庆大学 一种高纯铝硅靶材的制备方法
CN113897566A (zh) * 2021-09-27 2022-01-07 宁波江丰电子材料股份有限公司 一种高纯铝靶材的制备方法

Also Published As

Publication number Publication date
JPS6348946B2 (enrdf_load_stackoverflow) 1988-10-03

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