JPS61116876A - 大電力用絶縁ゲート電界効果型半導体装置 - Google Patents

大電力用絶縁ゲート電界効果型半導体装置

Info

Publication number
JPS61116876A
JPS61116876A JP60254702A JP25470285A JPS61116876A JP S61116876 A JPS61116876 A JP S61116876A JP 60254702 A JP60254702 A JP 60254702A JP 25470285 A JP25470285 A JP 25470285A JP S61116876 A JPS61116876 A JP S61116876A
Authority
JP
Japan
Prior art keywords
region
drain
electrode
date
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60254702A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0461509B2 (enrdf_load_stackoverflow
Inventor
Shikayuki Ochi
越智　鹿之
Takeaki Okabe
岡部　健明
Isao Yoshida
功 吉田
Minoru Nagata
永田　穣
Hideshi Ito
伊藤　秀史
Masatomo Furuumi
古海　正友
Masaru Takeuchi
竹内　賢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60254702A priority Critical patent/JPS61116876A/ja
Publication of JPS61116876A publication Critical patent/JPS61116876A/ja
Publication of JPH0461509B2 publication Critical patent/JPH0461509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60254702A 1985-11-15 1985-11-15 大電力用絶縁ゲート電界効果型半導体装置 Granted JPS61116876A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60254702A JPS61116876A (ja) 1985-11-15 1985-11-15 大電力用絶縁ゲート電界効果型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60254702A JPS61116876A (ja) 1985-11-15 1985-11-15 大電力用絶縁ゲート電界効果型半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4265177A Division JPS53128281A (en) 1977-04-15 1977-04-15 Insulated gate field effect type semiconductor device for large power

Publications (2)

Publication Number Publication Date
JPS61116876A true JPS61116876A (ja) 1986-06-04
JPH0461509B2 JPH0461509B2 (enrdf_load_stackoverflow) 1992-10-01

Family

ID=17268666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60254702A Granted JPS61116876A (ja) 1985-11-15 1985-11-15 大電力用絶縁ゲート電界効果型半導体装置

Country Status (1)

Country Link
JP (1) JPS61116876A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH036855A (ja) * 1989-06-05 1991-01-14 Takehide Shirato 半導体装置
JPH0474474A (ja) * 1990-07-16 1992-03-09 Matsushita Electron Corp 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH036855A (ja) * 1989-06-05 1991-01-14 Takehide Shirato 半導体装置
JPH0474474A (ja) * 1990-07-16 1992-03-09 Matsushita Electron Corp 半導体装置

Also Published As

Publication number Publication date
JPH0461509B2 (enrdf_load_stackoverflow) 1992-10-01

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