JP2009043923A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2009043923A JP2009043923A JP2007207056A JP2007207056A JP2009043923A JP 2009043923 A JP2009043923 A JP 2009043923A JP 2007207056 A JP2007207056 A JP 2007207056A JP 2007207056 A JP2007207056 A JP 2007207056A JP 2009043923 A JP2009043923 A JP 2009043923A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type impurity
- conductivity type
- gate
- channel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000012535 impurity Substances 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims description 35
- 238000002955 isolation Methods 0.000 claims description 26
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 14
- 230000006866 deterioration Effects 0.000 abstract description 3
- 108091006146 Channels Proteins 0.000 description 73
- 238000002513 implantation Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 3
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】ソース領域下方、ゲート領域下方およびドレイン領域下方のチャネル領域底部に連続したn型不純物領域を設ける。n型不純物領域はチャネル領域およびバックゲート領域より不純物濃度が高く、ゲート領域およびバックゲート領域からのp型不純物の拡散の影響をほとんど受けない。またソース領域下方からドレイン領域下方まで連続して設けることにより、この領域における電流経路の抵抗値を略均一にできる。したがってIDSSを安定化させ、順伝達アドミタンスgm、電圧利得Gvを向上させ、ノイズ電圧Vnoを低減できる。更に同一ウエハ内でのIDSSバラツキも抑制できる。
【選択図】 図2
Description
3 分離領域
4 チャネル領域
4’ n型半導体層
5 ソース領域
6 ドレイン領域
7 ゲート領域
9 絶縁膜
11 ソース電極
12 ドレイン電極
13 ゲート電極
16 n型不純物領域
21 p+型半導体基板
22 p型半導体層
23 分離領域
24 チャネル領域
25 ソース領域
26 ドレイン領域
27 ゲート領域
29 ソース電極
30 ドレイン電極
31 ゲート電極
40 絶縁膜
100、200 接合型FET(J−FET)
Claims (6)
- バックゲート領域となる一導電型半導体基板と、
該基板表面に設けられた逆導電型のチャネル領域と、
該チャネル領域表面に設けられた一導電型のゲート領域と、
該ゲート領域下方の前記チャネル領域底部に設けられ、該チャネル領域より不純物濃度が高い逆導電型不純物領域と、
前記ゲート領域の両側の前記チャネル領域表面に設けられた逆導電型のソース領域およびドレイン領域と、
を具備することを特徴とする半導体装置。 - 前記逆導電型不純物領域は、前記ソース領域下方から前記ドレイン領域下方まで設けられることを特徴とする請求項1に記載の半導体装置。
- 前記チャネル領域の端部には分離領域が設けられ、前記逆導電型不純物領域は前記分離領域に達する直前まで連続して設けられることを特徴とする請求項1に記載の半導体装置。
- バックゲート領域となる一導電型半導体基板を準備する工程と、
前記バックゲート領域の上方に逆導電型不純物領域を形成する工程と、
該逆導電型不純物領域の上に逆導電型半導体層を形成する工程と、
該逆導電型半導体層を貫通する分離領域を形成し、該分離領域で区画されたチャネル領域を形成する工程と、
前記逆導電型不純物領域上の前記チャネル領域表面に一導電型のゲート領域を形成する工程と、
該ゲート領域の両側のチャネル領域表面に逆導電型のソース領域およびドレイン領域を形成する工程と、
を具備することを特徴とする半導体装置の製造方法。 - 前記逆導電型不純物領域は、前記ソース領域下方から前記ドレイン領域下方までの前記チャネル領域底部に設けられることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記逆導電型不純物領域は前記分離領域に達する直前まで連続して設けられることを特徴とする請求項4に記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007207056A JP2009043923A (ja) | 2007-08-08 | 2007-08-08 | 半導体装置及びその製造方法 |
KR1020080075981A KR100978452B1 (ko) | 2007-08-08 | 2008-08-04 | 반도체 장치 및 그 제조 방법 |
CN2008101443868A CN101364617B (zh) | 2007-08-08 | 2008-08-04 | 结型场效应晶体管及其制造方法 |
US12/186,345 US7944017B2 (en) | 2007-08-08 | 2008-08-05 | Semiconductor device and manufacturing method of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007207056A JP2009043923A (ja) | 2007-08-08 | 2007-08-08 | 半導体装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009043923A true JP2009043923A (ja) | 2009-02-26 |
Family
ID=40345641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007207056A Ceased JP2009043923A (ja) | 2007-08-08 | 2007-08-08 | 半導体装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7944017B2 (ja) |
JP (1) | JP2009043923A (ja) |
KR (1) | KR100978452B1 (ja) |
CN (1) | CN101364617B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011145253A1 (ja) * | 2010-05-17 | 2011-11-24 | パナソニック株式会社 | 接合型電界効果トランジスタ、その製造方法及びアナログ回路 |
US8928045B2 (en) | 2010-06-07 | 2015-01-06 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device |
WO2015097771A1 (ja) * | 2013-12-25 | 2015-07-02 | キヤノン株式会社 | 撮像装置、撮像システム、および、撮像装置の製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8481380B2 (en) * | 2010-09-23 | 2013-07-09 | International Business Machines Corporation | Asymmetric wedge JFET, related method and design structure |
CN102842617B (zh) * | 2011-06-23 | 2015-09-16 | 中国科学院微电子研究所 | Mosfet及其制造方法 |
US9633854B2 (en) | 2011-06-23 | 2017-04-25 | Institute of Microelectronics, Chinese Academy of Sciences | MOSFET and method for manufacturing the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58116776A (ja) * | 1981-12-28 | 1983-07-12 | エヌ・ベ−・フィリップス・フル−イランペンファブリケン | 横方向接合形電界効果トランジスタを具える半導体装置 |
JPS61201475A (ja) * | 1985-03-04 | 1986-09-06 | Rohm Co Ltd | 接合型電界効果トランジスタの製造方法 |
JPH02240936A (ja) * | 1989-03-15 | 1990-09-25 | Hitachi Ltd | 半導体素子 |
JPH0320047A (ja) * | 1989-06-16 | 1991-01-29 | Matsushita Electron Corp | 半導体装置 |
JPH0327534A (ja) * | 1989-06-23 | 1991-02-05 | Nec Corp | 接合型電界効果トランジスタ |
JPH03108341A (ja) * | 1989-09-22 | 1991-05-08 | Hitachi Ltd | 半導体装置とその製造方法 |
JPH04154130A (ja) * | 1990-10-18 | 1992-05-27 | Nec Yamagata Ltd | 半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6092659A (ja) | 1983-10-26 | 1985-05-24 | Junichi Nishizawa | 固体撮像装置の製造方法 |
JPH04303962A (ja) * | 1991-04-01 | 1992-10-27 | Nec Yamagata Ltd | 半導体装置 |
JPH05315549A (ja) * | 1992-05-13 | 1993-11-26 | Nec Yamagata Ltd | 半導体装置 |
JP2713205B2 (ja) | 1995-02-21 | 1998-02-16 | 日本電気株式会社 | 半導体装置 |
JP3082671B2 (ja) * | 1996-06-26 | 2000-08-28 | 日本電気株式会社 | トランジスタ素子及びその製造方法 |
JP2000138233A (ja) | 1998-10-29 | 2000-05-16 | Nec Yamagata Ltd | 接合型電界効果トランジスタ及びその製造方法 |
JP2002190480A (ja) * | 2000-12-20 | 2002-07-05 | Rohm Co Ltd | 半導体装置 |
US6740907B2 (en) * | 2002-10-04 | 2004-05-25 | Rohm Co., Ltd. | Junction field-effect transistor |
US20090168508A1 (en) * | 2007-12-31 | 2009-07-02 | Dsm Solutions, Inc. | Static random access memory having cells with junction field effect and bipolar junction transistors |
-
2007
- 2007-08-08 JP JP2007207056A patent/JP2009043923A/ja not_active Ceased
-
2008
- 2008-08-04 KR KR1020080075981A patent/KR100978452B1/ko not_active IP Right Cessation
- 2008-08-04 CN CN2008101443868A patent/CN101364617B/zh active Active
- 2008-08-05 US US12/186,345 patent/US7944017B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58116776A (ja) * | 1981-12-28 | 1983-07-12 | エヌ・ベ−・フィリップス・フル−イランペンファブリケン | 横方向接合形電界効果トランジスタを具える半導体装置 |
JPS61201475A (ja) * | 1985-03-04 | 1986-09-06 | Rohm Co Ltd | 接合型電界効果トランジスタの製造方法 |
JPH02240936A (ja) * | 1989-03-15 | 1990-09-25 | Hitachi Ltd | 半導体素子 |
JPH0320047A (ja) * | 1989-06-16 | 1991-01-29 | Matsushita Electron Corp | 半導体装置 |
JPH0327534A (ja) * | 1989-06-23 | 1991-02-05 | Nec Corp | 接合型電界効果トランジスタ |
JPH03108341A (ja) * | 1989-09-22 | 1991-05-08 | Hitachi Ltd | 半導体装置とその製造方法 |
JPH04154130A (ja) * | 1990-10-18 | 1992-05-27 | Nec Yamagata Ltd | 半導体装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011145253A1 (ja) * | 2010-05-17 | 2011-11-24 | パナソニック株式会社 | 接合型電界効果トランジスタ、その製造方法及びアナログ回路 |
JP2011243708A (ja) * | 2010-05-17 | 2011-12-01 | Panasonic Corp | 接合型電界効果トランジスタ、その製造方法及びアナログ回路 |
US9269830B2 (en) | 2010-05-17 | 2016-02-23 | Panasonic Intellectual Property Management Co., Ltd. | Junction field effect transistor and analog circuit |
US8928045B2 (en) | 2010-06-07 | 2015-01-06 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device |
JP5834200B2 (ja) * | 2010-06-07 | 2015-12-16 | パナソニックIpマネジメント株式会社 | 半導体装置 |
WO2015097771A1 (ja) * | 2013-12-25 | 2015-07-02 | キヤノン株式会社 | 撮像装置、撮像システム、および、撮像装置の製造方法 |
JPWO2015097771A1 (ja) * | 2013-12-25 | 2017-03-23 | キヤノン株式会社 | 撮像装置、撮像システム、および、撮像装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100978452B1 (ko) | 2010-08-26 |
CN101364617B (zh) | 2012-03-07 |
US7944017B2 (en) | 2011-05-17 |
KR20090015821A (ko) | 2009-02-12 |
US20090039398A1 (en) | 2009-02-12 |
CN101364617A (zh) | 2009-02-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2007123887A (ja) | レトログレード領域を備える横型dmosトランジスタ及びその製造方法 | |
JP2007096034A (ja) | 絶縁ゲート型電界効果トランジスタおよびその製造方法 | |
JP4727426B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2009043923A (ja) | 半導体装置及びその製造方法 | |
JP6700648B2 (ja) | 半導体装置の製造方法 | |
US6867476B2 (en) | Vertical double diffused MOSFET and method of fabricating the same | |
US20080093635A1 (en) | Junction Fet and Method of Manufacturing the Same | |
US9337288B2 (en) | Method of manufacturing MOS-type semiconductor device | |
US20100015772A1 (en) | Method of manufacturing semiconductor device | |
US4351099A (en) | Method of making FET utilizing shadow masking and diffusion from a doped oxide | |
TWI416725B (zh) | 橫向擴散金氧半導體元件 | |
US20030102507A1 (en) | Semiconductor device and method for manufacturing the same | |
WO2011155105A1 (ja) | 半導体装置及びその製造方法 | |
JP2009277839A (ja) | 半導体装置の製造方法 | |
US20080048214A1 (en) | Junction field effect transistor and method of manufacturing the same | |
TWI673880B (zh) | 橫向擴散金氧半導體裝置 | |
JP2005191247A (ja) | 半導体基板及びそれを用いた半導体装置 | |
US9837320B2 (en) | MOSFET devices with asymmetric structural configurations introducing different electrical characteristics | |
US20120244668A1 (en) | Semiconductor devices with layout controlled channel and associated processes of manufacturing | |
JP2004356534A (ja) | 半導体装置及びその製造方法 | |
CN108091575B (zh) | 结型场效应晶体管及其制作方法 | |
JP4620564B2 (ja) | 半導体装置 | |
JP5014622B2 (ja) | 絶縁ゲート型半導体装置の製造方法 | |
JP3109274B2 (ja) | 半導体装置およびその製造方法 | |
JP7006389B2 (ja) | 半導体装置および半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100128 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20110608 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121112 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121120 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130206 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20130215 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130405 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130604 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130902 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140121 |
|
A045 | Written measure of dismissal of application [lapsed due to lack of payment] |
Free format text: JAPANESE INTERMEDIATE CODE: A045 Effective date: 20140527 |