JPH0461509B2 - - Google Patents
Info
- Publication number
- JPH0461509B2 JPH0461509B2 JP60254702A JP25470285A JPH0461509B2 JP H0461509 B2 JPH0461509 B2 JP H0461509B2 JP 60254702 A JP60254702 A JP 60254702A JP 25470285 A JP25470285 A JP 25470285A JP H0461509 B2 JPH0461509 B2 JP H0461509B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- gate
- source
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60254702A JPS61116876A (ja) | 1985-11-15 | 1985-11-15 | 大電力用絶縁ゲート電界効果型半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60254702A JPS61116876A (ja) | 1985-11-15 | 1985-11-15 | 大電力用絶縁ゲート電界効果型半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4265177A Division JPS53128281A (en) | 1977-04-15 | 1977-04-15 | Insulated gate field effect type semiconductor device for large power |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61116876A JPS61116876A (ja) | 1986-06-04 |
| JPH0461509B2 true JPH0461509B2 (enrdf_load_stackoverflow) | 1992-10-01 |
Family
ID=17268666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60254702A Granted JPS61116876A (ja) | 1985-11-15 | 1985-11-15 | 大電力用絶縁ゲート電界効果型半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61116876A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2849923B2 (ja) * | 1989-06-05 | 1999-01-27 | 猛英 白土 | 半導体装置 |
| JP2713496B2 (ja) * | 1990-07-16 | 1998-02-16 | 松下電子工業株式会社 | 半導体装置 |
-
1985
- 1985-11-15 JP JP60254702A patent/JPS61116876A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61116876A (ja) | 1986-06-04 |
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