JPH0428150B2 - - Google Patents

Info

Publication number
JPH0428150B2
JPH0428150B2 JP59072836A JP7283684A JPH0428150B2 JP H0428150 B2 JPH0428150 B2 JP H0428150B2 JP 59072836 A JP59072836 A JP 59072836A JP 7283684 A JP7283684 A JP 7283684A JP H0428150 B2 JPH0428150 B2 JP H0428150B2
Authority
JP
Japan
Prior art keywords
region
drain
gate
source
igfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59072836A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59229870A (ja
Inventor
Shikayuki Ochi
Takeaki Okabe
Isao Yoshida
Minoru Nagata
Hideshi Ito
Masatomo Furumi
Masaru Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59072836A priority Critical patent/JPS59229870A/ja
Publication of JPS59229870A publication Critical patent/JPS59229870A/ja
Publication of JPH0428150B2 publication Critical patent/JPH0428150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
JP59072836A 1984-04-13 1984-04-13 大電力用絶縁ゲ−ト電界効果型半導体装置 Granted JPS59229870A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59072836A JPS59229870A (ja) 1984-04-13 1984-04-13 大電力用絶縁ゲ−ト電界効果型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59072836A JPS59229870A (ja) 1984-04-13 1984-04-13 大電力用絶縁ゲ−ト電界効果型半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4265177A Division JPS53128281A (en) 1977-04-15 1977-04-15 Insulated gate field effect type semiconductor device for large power

Publications (2)

Publication Number Publication Date
JPS59229870A JPS59229870A (ja) 1984-12-24
JPH0428150B2 true JPH0428150B2 (enrdf_load_stackoverflow) 1992-05-13

Family

ID=13500890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59072836A Granted JPS59229870A (ja) 1984-04-13 1984-04-13 大電力用絶縁ゲ−ト電界効果型半導体装置

Country Status (1)

Country Link
JP (1) JPS59229870A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093379A (enrdf_load_stackoverflow) * 1973-12-19 1975-07-25

Also Published As

Publication number Publication date
JPS59229870A (ja) 1984-12-24

Similar Documents

Publication Publication Date Title
JPS6159540B2 (enrdf_load_stackoverflow)
JP3158738B2 (ja) 高耐圧ｍｉｓ電界効果トランジスタおよび半導体集積回路
JP2842871B2 (ja) パワーｍｏｓトランジスタ構造
US6914298B1 (en) Double diffusion MOSFET with N+ and P+ type regions at an equal potential
US20010012663A1 (en) Single feature size mos technology power device
US6133607A (en) Semiconductor device
JPH01138759A (ja) 高耐圧プレーナ素子
US4686551A (en) MOS transistor
CN203103306U (zh) 半导体装置
JP3203858B2 (ja) 高耐圧ｍｉｓ電界効果トランジスタ
US5633525A (en) Lateral field effect transistor
KR100398164B1 (ko) 절연게이트반도체장치
KR100340703B1 (ko) Ｐ채널 트렌치 ｍｏｓｆｅｔ 장치
US6867476B2 (en) Vertical double diffused MOSFET and method of fabricating the same
JPS63266882A (ja) 縦型絶縁ゲ−ト電界効果トランジスタ
US5451536A (en) Power MOSFET transistor
JP3489404B2 (ja) 絶縁ゲート型半導体装置
JP3354127B2 (ja) 高電圧素子及びその製造方法
JP2003174167A (ja) 半導体装置及びその製造方法
JP2007281512A (ja) 半導体装置
JP6996247B2 (ja) 半導体集積回路装置
US20100102379A1 (en) Lateral diffused metal oxide semiconductor device
JPS62155567A (ja) 絶縁ゲ−ト型半導体装置の製造方法
JPH0461509B2 (enrdf_load_stackoverflow)
JPH0428150B2 (enrdf_load_stackoverflow)