JPS61113771A - 窒化アルミニユ−ム作製方法 - Google Patents

窒化アルミニユ−ム作製方法

Info

Publication number
JPS61113771A
JPS61113771A JP59234387A JP23438784A JPS61113771A JP S61113771 A JPS61113771 A JP S61113771A JP 59234387 A JP59234387 A JP 59234387A JP 23438784 A JP23438784 A JP 23438784A JP S61113771 A JPS61113771 A JP S61113771A
Authority
JP
Japan
Prior art keywords
substrate
aluminum
nitride
aluminum nitride
vacuum vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59234387A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0416547B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59234387A priority Critical patent/JPS61113771A/ja
Priority to US06/795,917 priority patent/US4656101A/en
Publication of JPS61113771A publication Critical patent/JPS61113771A/ja
Publication of JPH0416547B2 publication Critical patent/JPH0416547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69433—
    • H10W20/48—

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP59234387A 1984-11-07 1984-11-07 窒化アルミニユ−ム作製方法 Granted JPS61113771A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59234387A JPS61113771A (ja) 1984-11-07 1984-11-07 窒化アルミニユ−ム作製方法
US06/795,917 US4656101A (en) 1984-11-07 1985-11-07 Electronic device with a protective film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59234387A JPS61113771A (ja) 1984-11-07 1984-11-07 窒化アルミニユ−ム作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2086150A Division JPH069198B2 (ja) 1990-03-29 1990-03-29 半導体装置
JP8614990A Division JPH0674502B2 (ja) 1990-03-29 1990-03-29 半導体装置

Publications (2)

Publication Number Publication Date
JPS61113771A true JPS61113771A (ja) 1986-05-31
JPH0416547B2 JPH0416547B2 (enExample) 1992-03-24

Family

ID=16970199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59234387A Granted JPS61113771A (ja) 1984-11-07 1984-11-07 窒化アルミニユ−ム作製方法

Country Status (1)

Country Link
JP (1) JPS61113771A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5681759A (en) * 1994-02-15 1997-10-28 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6174757B1 (en) 1994-02-28 2001-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126774A (ja) * 1983-01-10 1984-07-21 Nec Corp 気相金属堆積装置
JPS59129774A (ja) * 1983-01-12 1984-07-26 Fuji Xerox Co Ltd 選択的窒化膜の作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126774A (ja) * 1983-01-10 1984-07-21 Nec Corp 気相金属堆積装置
JPS59129774A (ja) * 1983-01-12 1984-07-26 Fuji Xerox Co Ltd 選択的窒化膜の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5681759A (en) * 1994-02-15 1997-10-28 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6174757B1 (en) 1994-02-28 2001-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6709906B2 (en) 1994-02-28 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device

Also Published As

Publication number Publication date
JPH0416547B2 (enExample) 1992-03-24

Similar Documents

Publication Publication Date Title
US20030221621A1 (en) Method and apparatus for processing semiconductor substrates with hydroxyl radicals
JPS61127121A (ja) 薄膜形成方法
JPH0831454B2 (ja) 半導体装置の製造方法
Bergonzo et al. Low pressure photodeposition of silicon nitride films using a xenon excimer lamp
US4717602A (en) Method for producing silicon nitride layers
JPH06168937A (ja) シリコン酸化膜の製造方法
US4910044A (en) Ultraviolet light emitting device and application thereof
JPS61113771A (ja) 窒化アルミニユ−ム作製方法
US7488693B2 (en) Method for producing silicon oxide film
JPH03115575A (ja) 半導体装置
JPH03108753A (ja) 半導体装置
US10559459B2 (en) Method for producing silicon nitride film and silicon nitride film
JP2814061B2 (ja) 半導体装置作製方法
JPS60190566A (ja) 窒化珪素作製方法
JPS59147435A (ja) 酸化シリコン膜の形成法
JPS6366919A (ja) 被膜作製方法
JPS61140139A (ja) 半導体装置
JPS6199676A (ja) 窒化珪素作製方法
CN100555582C (zh) 用于形成氧化物膜的方法和设备
JPS62158865A (ja) 酸化珪素作製方法
JPS60190565A (ja) 窒化珪素作製方法
JPS6052579A (ja) 光学的窒化膜形成装置
JP2786224B2 (ja) 薄膜作製装置および方法
JPS61284578A (ja) 酸化珪素作製方法
JPS6289876A (ja) 薄膜形成方法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term