JPH0416547B2 - - Google Patents

Info

Publication number
JPH0416547B2
JPH0416547B2 JP59234387A JP23438784A JPH0416547B2 JP H0416547 B2 JPH0416547 B2 JP H0416547B2 JP 59234387 A JP59234387 A JP 59234387A JP 23438784 A JP23438784 A JP 23438784A JP H0416547 B2 JPH0416547 B2 JP H0416547B2
Authority
JP
Japan
Prior art keywords
aluminum nitride
film
semiconductor device
reaction
trimethylaluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59234387A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61113771A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59234387A priority Critical patent/JPS61113771A/ja
Priority to US06/795,917 priority patent/US4656101A/en
Publication of JPS61113771A publication Critical patent/JPS61113771A/ja
Publication of JPH0416547B2 publication Critical patent/JPH0416547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69433—
    • H10W20/48—

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP59234387A 1984-11-07 1984-11-07 窒化アルミニユ−ム作製方法 Granted JPS61113771A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59234387A JPS61113771A (ja) 1984-11-07 1984-11-07 窒化アルミニユ−ム作製方法
US06/795,917 US4656101A (en) 1984-11-07 1985-11-07 Electronic device with a protective film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59234387A JPS61113771A (ja) 1984-11-07 1984-11-07 窒化アルミニユ−ム作製方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2086150A Division JPH069198B2 (ja) 1990-03-29 1990-03-29 半導体装置
JP8614990A Division JPH0674502B2 (ja) 1990-03-29 1990-03-29 半導体装置

Publications (2)

Publication Number Publication Date
JPS61113771A JPS61113771A (ja) 1986-05-31
JPH0416547B2 true JPH0416547B2 (enExample) 1992-03-24

Family

ID=16970199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59234387A Granted JPS61113771A (ja) 1984-11-07 1984-11-07 窒化アルミニユ−ム作製方法

Country Status (1)

Country Link
JP (1) JPS61113771A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3254072B2 (ja) * 1994-02-15 2002-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5620906A (en) 1994-02-28 1997-04-15 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device by introducing hydrogen ions

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126774A (ja) * 1983-01-10 1984-07-21 Nec Corp 気相金属堆積装置
JPS59129774A (ja) * 1983-01-12 1984-07-26 Fuji Xerox Co Ltd 選択的窒化膜の作製方法

Also Published As

Publication number Publication date
JPS61113771A (ja) 1986-05-31

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