JPS61110396A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS61110396A
JPS61110396A JP59232733A JP23273384A JPS61110396A JP S61110396 A JPS61110396 A JP S61110396A JP 59232733 A JP59232733 A JP 59232733A JP 23273384 A JP23273384 A JP 23273384A JP S61110396 A JPS61110396 A JP S61110396A
Authority
JP
Japan
Prior art keywords
signal
transistor
circuit
output
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59232733A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0439158B2 (enExample
Inventor
Shigeki Nozaki
野崎　茂樹
Takeshi Ohira
大平　壮
Susumu Sato
将 佐藤
Tomio Nakano
中野　富男
Yoshihiro Takemae
義博 竹前
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59232733A priority Critical patent/JPS61110396A/ja
Priority to EP85307971A priority patent/EP0181177B1/en
Priority to DE8585307971T priority patent/DE3581888D1/de
Priority to KR1019850008230A priority patent/KR900007999B1/ko
Publication of JPS61110396A publication Critical patent/JPS61110396A/ja
Priority to US07/484,474 priority patent/US4970693A/en
Publication of JPH0439158B2 publication Critical patent/JPH0439158B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
JP59232733A 1984-11-05 1984-11-05 半導体記憶装置 Granted JPS61110396A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59232733A JPS61110396A (ja) 1984-11-05 1984-11-05 半導体記憶装置
EP85307971A EP0181177B1 (en) 1984-11-05 1985-11-04 A semiconductor memory device
DE8585307971T DE3581888D1 (de) 1984-11-05 1985-11-04 Halbleiterspeicheranordnung.
KR1019850008230A KR900007999B1 (ko) 1984-11-05 1985-11-05 반도체 메모리 장치
US07/484,474 US4970693A (en) 1984-11-05 1990-02-23 Semiconductor memory device with internal control signal based upon output timing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59232733A JPS61110396A (ja) 1984-11-05 1984-11-05 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS61110396A true JPS61110396A (ja) 1986-05-28
JPH0439158B2 JPH0439158B2 (enExample) 1992-06-26

Family

ID=16943925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59232733A Granted JPS61110396A (ja) 1984-11-05 1984-11-05 半導体記憶装置

Country Status (5)

Country Link
US (1) US4970693A (enExample)
EP (1) EP0181177B1 (enExample)
JP (1) JPS61110396A (enExample)
KR (1) KR900007999B1 (enExample)
DE (1) DE3581888D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01227296A (ja) * 1988-03-08 1989-09-11 Toshiba Corp 半導体集積回路の誤動作防止回路

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0197014A (ja) * 1987-10-09 1989-04-14 Toshiba Corp 半導体集積回路
JPH01238217A (ja) * 1988-03-18 1989-09-22 Toshiba Corp 半導体集積回路の誤動作防止回路
US5206833A (en) * 1988-09-12 1993-04-27 Acer Incorporated Pipelined dual port RAM
JPH0756749B2 (ja) * 1989-09-29 1995-06-14 株式会社東芝 機能選択回路
TW198135B (enExample) * 1990-11-20 1993-01-11 Oki Electric Ind Co Ltd
US5485430A (en) * 1992-12-22 1996-01-16 Sgs-Thomson Microelectronics, Inc. Multiple clocked dynamic sense amplifier
JP2605576B2 (ja) * 1993-04-02 1997-04-30 日本電気株式会社 同期型半導体メモリ
KR940026946A (ko) * 1993-05-12 1994-12-10 김광호 데이타출력 확장방법과 이를 통한 신뢰성있는 유효데이타의 출력이 이루어지는 반도체집적회로
JPH0715312A (ja) * 1993-06-15 1995-01-17 Fujitsu Ltd 半導体記憶装置
JP2697634B2 (ja) * 1994-09-30 1998-01-14 日本電気株式会社 同期型半導体記憶装置
US5550783A (en) * 1995-04-19 1996-08-27 Alliance Semiconductor Corporation Phase shift correction circuit for monolithic random access memory
US8193599B2 (en) * 2009-09-02 2012-06-05 Himax Semiconductor, Inc. Fabricating method and structure of a wafer level module

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4165541A (en) * 1977-12-12 1979-08-21 Fairchild Camera And Instrument Corporation Serial-parallel-serial charge-coupled device memory having interlacing and ripple clocking of the parallel shift registers
US4337525A (en) * 1979-04-17 1982-06-29 Nippon Electric Co., Ltd. Asynchronous circuit responsive to changes in logic level
JPS5835783A (ja) * 1981-08-24 1983-03-02 Fujitsu Ltd 半導体メモリ
US4585955B1 (en) * 1982-12-15 2000-11-21 Tokyo Shibaura Electric Co Internally regulated power voltage circuit for mis semiconductor integrated circuit
JPS6052112A (ja) * 1983-08-31 1985-03-25 Toshiba Corp 論理回路
US4638182A (en) * 1984-07-11 1987-01-20 Texas Instruments Incorporated High-level CMOS driver circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01227296A (ja) * 1988-03-08 1989-09-11 Toshiba Corp 半導体集積回路の誤動作防止回路

Also Published As

Publication number Publication date
KR860004380A (ko) 1986-06-20
DE3581888D1 (de) 1991-04-04
US4970693A (en) 1990-11-13
EP0181177A3 (en) 1988-03-02
EP0181177B1 (en) 1991-02-27
EP0181177A2 (en) 1986-05-14
KR900007999B1 (ko) 1990-10-23
JPH0439158B2 (enExample) 1992-06-26

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