JPS61108172A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS61108172A
JPS61108172A JP59230705A JP23070584A JPS61108172A JP S61108172 A JPS61108172 A JP S61108172A JP 59230705 A JP59230705 A JP 59230705A JP 23070584 A JP23070584 A JP 23070584A JP S61108172 A JPS61108172 A JP S61108172A
Authority
JP
Japan
Prior art keywords
insulating film
gate insulating
semiconductor layer
thin film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59230705A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0578948B2 (enrdf_load_stackoverflow
Inventor
Koji Nomura
幸治 野村
Masaharu Terauchi
正治 寺内
Kuni Ogawa
小川　久仁
Atsushi Abe
阿部　惇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59230705A priority Critical patent/JPS61108172A/ja
Publication of JPS61108172A publication Critical patent/JPS61108172A/ja
Publication of JPH0578948B2 publication Critical patent/JPH0578948B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
JP59230705A 1984-11-01 1984-11-01 薄膜トランジスタの製造方法 Granted JPS61108172A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59230705A JPS61108172A (ja) 1984-11-01 1984-11-01 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59230705A JPS61108172A (ja) 1984-11-01 1984-11-01 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS61108172A true JPS61108172A (ja) 1986-05-26
JPH0578948B2 JPH0578948B2 (enrdf_load_stackoverflow) 1993-10-29

Family

ID=16912019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59230705A Granted JPS61108172A (ja) 1984-11-01 1984-11-01 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS61108172A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0534530A3 (en) * 1991-09-23 1996-08-28 Koninkl Philips Electronics Nv Method of manufacturing a device whereby a substance is implanted into a body
EP1005073A1 (en) * 1998-11-27 2000-05-31 Murata Manufacturing Co., Ltd. Method of forming dielectric thin film pattern and method of forming laminate pattern comprising dielectric thin film and conductive thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0534530A3 (en) * 1991-09-23 1996-08-28 Koninkl Philips Electronics Nv Method of manufacturing a device whereby a substance is implanted into a body
EP1005073A1 (en) * 1998-11-27 2000-05-31 Murata Manufacturing Co., Ltd. Method of forming dielectric thin film pattern and method of forming laminate pattern comprising dielectric thin film and conductive thin film

Also Published As

Publication number Publication date
JPH0578948B2 (enrdf_load_stackoverflow) 1993-10-29

Similar Documents

Publication Publication Date Title
JPH0640550B2 (ja) 薄膜トランジスタの製造方法
US4654959A (en) Method for the manufacture of thin film transistors
JPH05291220A (ja) 半導体装置の製造方法
JPS61108172A (ja) 薄膜トランジスタの製造方法
JPH02186641A (ja) 薄膜電界効果型トランジスタ素子の製造方法
JP2996025B2 (ja) 絶縁膜の製造方法及びこれを用いた薄膜トランジスター素子
GB2137806A (en) Ion implantation in semiconductor bodies
JPS59149060A (ja) 薄膜トランジスタの製造方法
JPH0888363A (ja) 半導体装置及びその製造方法
JP3279280B2 (ja) 薄膜半導体素子の製造方法
JP4160174B2 (ja) 半導体装置
JPS5921193B2 (ja) 電界効果トランジスタの製造方法
JPS61121366A (ja) 薄膜トランジスタの製造方法
JPH0951098A (ja) 薄膜トランジスタおよびその製造方法
JPH05152331A (ja) 薄膜トランジスタの製造方法
JPH04328872A (ja) 多結晶薄膜トランジスタの製造方法及び多結晶薄膜トランジスタ
JPH0530053B2 (enrdf_load_stackoverflow)
JPH0494179A (ja) 酸化物超伝導薄膜デバイスの作製方法
JPS62241377A (ja) 薄膜トランジスタおよびその製造方法
JPH05343687A (ja) 薄膜トランジスタ
KR940007667B1 (ko) 리세스 게이트 갈륨비소 전계효과 트랜지스터의 제조방법
JPS5852351B2 (ja) 半導体装置の製造方法
JPH0544184B2 (enrdf_load_stackoverflow)
JPH0845962A (ja) 半導体装置の製造方法
JPH0228333A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees