JPS6092611A - 半導体素子の不純物拡散方法 - Google Patents

半導体素子の不純物拡散方法

Info

Publication number
JPS6092611A
JPS6092611A JP58200535A JP20053583A JPS6092611A JP S6092611 A JPS6092611 A JP S6092611A JP 58200535 A JP58200535 A JP 58200535A JP 20053583 A JP20053583 A JP 20053583A JP S6092611 A JPS6092611 A JP S6092611A
Authority
JP
Japan
Prior art keywords
diffusion
diffusion furnace
wafer
boron
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58200535A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0160932B2 (OSRAM
Inventor
Takanori Hitomi
隆典 人見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP58200535A priority Critical patent/JPS6092611A/ja
Publication of JPS6092611A publication Critical patent/JPS6092611A/ja
Publication of JPH0160932B2 publication Critical patent/JPH0160932B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P32/14—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
JP58200535A 1983-10-26 1983-10-26 半導体素子の不純物拡散方法 Granted JPS6092611A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58200535A JPS6092611A (ja) 1983-10-26 1983-10-26 半導体素子の不純物拡散方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58200535A JPS6092611A (ja) 1983-10-26 1983-10-26 半導体素子の不純物拡散方法

Publications (2)

Publication Number Publication Date
JPS6092611A true JPS6092611A (ja) 1985-05-24
JPH0160932B2 JPH0160932B2 (OSRAM) 1989-12-26

Family

ID=16425917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58200535A Granted JPS6092611A (ja) 1983-10-26 1983-10-26 半導体素子の不純物拡散方法

Country Status (1)

Country Link
JP (1) JPS6092611A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283822A (ja) * 1988-05-10 1989-11-15 Matsushita Electron Corp 半導体装置の製造方法
US4996168A (en) * 1987-11-07 1991-02-26 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing P type semiconductor device employing diffusion of boron glass
US5171708A (en) * 1990-08-22 1992-12-15 Shin-Etsu Handotai Co., Ltd. Method of boron diffusion into semiconductor wafers having reduced stacking faults

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5338597A (en) * 1976-09-14 1978-04-08 Saito Shinichi Combination of arrangements of functions of culture ponds
JPS5674924A (en) * 1979-11-26 1981-06-20 Toshiba Corp Method of manufacturing semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5338597A (en) * 1976-09-14 1978-04-08 Saito Shinichi Combination of arrangements of functions of culture ponds
JPS5674924A (en) * 1979-11-26 1981-06-20 Toshiba Corp Method of manufacturing semiconductor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4996168A (en) * 1987-11-07 1991-02-26 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing P type semiconductor device employing diffusion of boron glass
JPH01283822A (ja) * 1988-05-10 1989-11-15 Matsushita Electron Corp 半導体装置の製造方法
US5171708A (en) * 1990-08-22 1992-12-15 Shin-Etsu Handotai Co., Ltd. Method of boron diffusion into semiconductor wafers having reduced stacking faults

Also Published As

Publication number Publication date
JPH0160932B2 (OSRAM) 1989-12-26

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