JPS6064477A - 電界効果半導体装置の製造方法 - Google Patents

電界効果半導体装置の製造方法

Info

Publication number
JPS6064477A
JPS6064477A JP58171176A JP17117683A JPS6064477A JP S6064477 A JPS6064477 A JP S6064477A JP 58171176 A JP58171176 A JP 58171176A JP 17117683 A JP17117683 A JP 17117683A JP S6064477 A JPS6064477 A JP S6064477A
Authority
JP
Japan
Prior art keywords
recess
forming
resist film
resist
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58171176A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6332274B2 (enrdf_load_stackoverflow
Inventor
Kinshiro Kosemura
小瀬村　欣司郎
Yoshimi Yamashita
良美 山下
Hidetoshi Ishiwari
石割　秀敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58171176A priority Critical patent/JPS6064477A/ja
Publication of JPS6064477A publication Critical patent/JPS6064477A/ja
Publication of JPS6332274B2 publication Critical patent/JPS6332274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP58171176A 1983-09-19 1983-09-19 電界効果半導体装置の製造方法 Granted JPS6064477A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58171176A JPS6064477A (ja) 1983-09-19 1983-09-19 電界効果半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58171176A JPS6064477A (ja) 1983-09-19 1983-09-19 電界効果半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6064477A true JPS6064477A (ja) 1985-04-13
JPS6332274B2 JPS6332274B2 (enrdf_load_stackoverflow) 1988-06-29

Family

ID=15918404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58171176A Granted JPS6064477A (ja) 1983-09-19 1983-09-19 電界効果半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6064477A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6257257A (ja) * 1985-09-06 1987-03-12 Fujitsu Ltd 電界効果型半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6257257A (ja) * 1985-09-06 1987-03-12 Fujitsu Ltd 電界効果型半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6332274B2 (enrdf_load_stackoverflow) 1988-06-29

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