JPS60257570A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS60257570A JPS60257570A JP59115293A JP11529384A JPS60257570A JP S60257570 A JPS60257570 A JP S60257570A JP 59115293 A JP59115293 A JP 59115293A JP 11529384 A JP11529384 A JP 11529384A JP S60257570 A JPS60257570 A JP S60257570A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitride film
- emitter
- manufacturing
- impurity ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59115293A JPS60257570A (ja) | 1984-06-04 | 1984-06-04 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59115293A JPS60257570A (ja) | 1984-06-04 | 1984-06-04 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60257570A true JPS60257570A (ja) | 1985-12-19 |
| JPH0462454B2 JPH0462454B2 (enrdf_load_stackoverflow) | 1992-10-06 |
Family
ID=14659065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59115293A Granted JPS60257570A (ja) | 1984-06-04 | 1984-06-04 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60257570A (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS546471A (en) * | 1977-06-16 | 1979-01-18 | Nec Corp | Manufacture of semiconductor device |
| JPS5975661A (ja) * | 1982-10-22 | 1984-04-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
1984
- 1984-06-04 JP JP59115293A patent/JPS60257570A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS546471A (en) * | 1977-06-16 | 1979-01-18 | Nec Corp | Manufacture of semiconductor device |
| JPS5975661A (ja) * | 1982-10-22 | 1984-04-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0462454B2 (enrdf_load_stackoverflow) | 1992-10-06 |
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