JPS60230078A - Ｍｏｓ線量計 - Google Patents
Ｍｏｓ線量計Info
- Publication number
- JPS60230078A JPS60230078A JP60075264A JP7526485A JPS60230078A JP S60230078 A JPS60230078 A JP S60230078A JP 60075264 A JP60075264 A JP 60075264A JP 7526485 A JP7526485 A JP 7526485A JP S60230078 A JPS60230078 A JP S60230078A
- Authority
- JP
- Japan
- Prior art keywords
- dosimeter
- insulating layer
- floating gate
- base
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007667 floating Methods 0.000 claims description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 230000005855 radiation Effects 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 5
- 230000001066 destructive effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 230000035945 sensitivity Effects 0.000 description 16
- 230000008859 change Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000005865 ionizing radiation Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000009413 insulation Methods 0.000 description 4
- 238000006386 neutralization reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- 230000035508 accumulation Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005524 hole trap Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010351 charge transfer process Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/298—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation the devices being characterised by field-effect operation, e.g. MIS type detectors
Landscapes
- Measurement Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19843413829 DE3413829A1 (de) | 1984-04-10 | 1984-04-10 | Mos-dosimeter |
| DE3413829.3 | 1984-04-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60230078A true JPS60230078A (ja) | 1985-11-15 |
Family
ID=6233407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60075264A Pending JPS60230078A (ja) | 1984-04-10 | 1985-04-09 | Ｍｏｓ線量計 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4788581A (en, 2012) |
| EP (1) | EP0158588A3 (en, 2012) |
| JP (1) | JPS60230078A (en, 2012) |
| DE (1) | DE3413829A1 (en, 2012) |
| DK (1) | DK139285A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63149584A (ja) * | 1986-11-24 | 1988-06-22 | アメリカン テレフォン アンド テレグラフ カムパニー | 放射線測定方法およびその装置 |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332903A (en) * | 1991-03-19 | 1994-07-26 | California Institute Of Technology | p-MOSFET total dose dosimeter |
| GB9200569D0 (en) * | 1992-01-11 | 1992-03-11 | Atomic Energy Authority Uk | Semiconductor dosimeter |
| FI934784A0 (fi) * | 1993-10-28 | 1993-10-28 | Rados Technology Oy | Straolningsdetektor |
| JP3319905B2 (ja) * | 1995-03-24 | 2002-09-03 | 株式会社モリタ製作所 | デジタルｘ線撮影装置 |
| FI953240A0 (fi) * | 1995-06-30 | 1995-06-30 | Rados Technology Oy | Ljusdetektor |
| FI954041A0 (fi) * | 1995-08-28 | 1995-08-28 | Hidex Oy | Foerfarande foer detektering av radioaktivitet i ett stoedmaterial genom direkt detektering av jonisation |
| US6141243A (en) * | 1996-11-12 | 2000-10-31 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Sensor element |
| DE59608775D1 (de) | 1996-11-12 | 2002-03-28 | Fraunhofer Ges Forschung | Sensorelement |
| CA2215369C (en) | 1997-09-12 | 2008-11-18 | Nicholas Garry Tarr | Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein |
| JP3298509B2 (ja) * | 1998-06-12 | 2002-07-02 | 日本電気株式会社 | 半導体装置の製造方法 |
| WO2000028337A2 (en) | 1998-11-06 | 2000-05-18 | Onguard Systems, Inc. | Electronic circuit with a non-continuous discharge path |
| US6414318B1 (en) | 1998-11-06 | 2002-07-02 | Bridge Semiconductor Corporation | Electronic circuit |
| FR2805889B1 (fr) * | 2000-03-03 | 2002-05-31 | Centre Nat Rech Scient | Dispositif amplificateur pour capteurs et systeme de mesure d'une grandeur physique equipe d'un tel dispositif |
| EP1583150A1 (en) * | 2004-03-31 | 2005-10-05 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Image sensor with large-area, high-sensitivity and high-speed pixels |
| EP1624490B1 (en) * | 2004-08-04 | 2018-10-03 | Heptagon Micro Optics Pte. Ltd. | Large-area pixel for use in an image sensor |
| EP2242536A2 (en) * | 2008-01-30 | 2010-10-27 | Cardiac Pacemakers, Inc. | Method and apparatus for radiation effects detection |
| WO2010046904A2 (en) | 2008-09-11 | 2010-04-29 | Indian Institute Of Technology Bombay | Method and device for determining ionizing radiation |
| US8212218B2 (en) * | 2009-11-30 | 2012-07-03 | International Business Machines Corporation | Dosimeter powered by passive RF absorption |
| DE102012012296B4 (de) * | 2012-06-20 | 2014-01-23 | Oliver Boslau | Vorrichtung zum Detektieren elektromagnetischer Strahlung sowie Verfahren zum Betrieb einer solchen Vorrichtung |
| US9213112B2 (en) | 2013-03-15 | 2015-12-15 | Starfire Industries, Llc | Neutron radiation sensor |
| US10782420B2 (en) | 2017-12-18 | 2020-09-22 | Thermo Eberline Llc | Range-extended dosimeter |
| CN110581149A (zh) * | 2019-08-29 | 2019-12-17 | 天津大学 | 采用浮栅结构的软x射线成像探测器及系统 |
| IT202100000605A1 (it) | 2021-01-14 | 2022-07-14 | Blackcat Beyond | Dosimetro al silicio indossabile, resistente alle radiazioni, basato sulla tecnologia dei sensori a gate flottante |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
| US3569704A (en) * | 1968-08-15 | 1971-03-09 | Atomic Energy Commission | Radiation dosimeter |
| US3999209A (en) * | 1970-09-14 | 1976-12-21 | Rockwell International Corporation | Process for radiation hardening of MOS devices and device produced thereby |
| DE2415425B2 (de) * | 1974-03-29 | 1977-11-03 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zur ein- und umspeicherung verschiedener einspeicherbarer zustaende |
| JPS5456701A (en) * | 1977-10-14 | 1979-05-08 | Sanyo Electric Co Ltd | Preset receiving device |
| US4213045A (en) * | 1978-08-29 | 1980-07-15 | The United States Of America As Represented By The Secretary Of The Air Force | Metal nitride oxide semiconductor (MNOS) dosimeter |
| DE2912859A1 (de) * | 1979-03-30 | 1980-10-09 | Siemens Ag | Ig-fet mit schwebendem speichergate und mit steuergate |
-
1984
- 1984-04-10 DE DE19843413829 patent/DE3413829A1/de active Granted
-
1985
- 1985-03-28 DK DK139285A patent/DK139285A/da not_active Application Discontinuation
- 1985-03-29 US US06/717,703 patent/US4788581A/en not_active Expired - Fee Related
- 1985-04-01 EP EP85730049A patent/EP0158588A3/de not_active Withdrawn
- 1985-04-09 JP JP60075264A patent/JPS60230078A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63149584A (ja) * | 1986-11-24 | 1988-06-22 | アメリカン テレフォン アンド テレグラフ カムパニー | 放射線測定方法およびその装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| DK139285D0 (da) | 1985-03-28 |
| DE3413829C2 (en, 2012) | 1989-05-11 |
| DK139285A (da) | 1985-10-11 |
| EP0158588A3 (de) | 1987-01-14 |
| US4788581A (en) | 1988-11-29 |
| DE3413829A1 (de) | 1985-10-17 |
| EP0158588A2 (de) | 1985-10-16 |
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