DE3413829C2 - - Google Patents
Info
- Publication number
- DE3413829C2 DE3413829C2 DE3413829A DE3413829A DE3413829C2 DE 3413829 C2 DE3413829 C2 DE 3413829C2 DE 3413829 A DE3413829 A DE 3413829A DE 3413829 A DE3413829 A DE 3413829A DE 3413829 C2 DE3413829 C2 DE 3413829C2
- Authority
- DE
- Germany
- Prior art keywords
- mos
- floating gate
- gate
- dosimeter
- insulator layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007667 floating Methods 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 53
- 239000012212 insulator Substances 0.000 claims description 38
- 230000005855 radiation Effects 0.000 claims description 30
- 235000012239 silicon dioxide Nutrition 0.000 claims description 27
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 25
- 229910052681 coesite Inorganic materials 0.000 claims description 22
- 229910052906 cristobalite Inorganic materials 0.000 claims description 22
- 229910052682 stishovite Inorganic materials 0.000 claims description 22
- 229910052905 tridymite Inorganic materials 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 230000008859 change Effects 0.000 description 13
- 230000005865 ionizing radiation Effects 0.000 description 13
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 231100000987 absorbed dose Toxicity 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000010351 charge transfer process Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000005524 hole trap Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/298—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation the devices being characterised by field-effect operation, e.g. MIS type detectors
Landscapes
- Measurement Of Radiation (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19843413829 DE3413829A1 (de) | 1984-04-10 | 1984-04-10 | Mos-dosimeter |
| DK139285A DK139285A (da) | 1984-04-10 | 1985-03-28 | Mos dosimeter |
| US06/717,703 US4788581A (en) | 1984-04-10 | 1985-03-29 | MOS dosimeter |
| EP85730049A EP0158588A3 (de) | 1984-04-10 | 1985-04-01 | MOS-dosimeter und Verfahren zu seiner Herstellung |
| IL74813A IL74813A0 (en) | 1984-04-10 | 1985-04-03 | Mos-dosimeter |
| JP60075264A JPS60230078A (ja) | 1984-04-10 | 1985-04-09 | Ｍｏｓ線量計 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19843413829 DE3413829A1 (de) | 1984-04-10 | 1984-04-10 | Mos-dosimeter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3413829A1 DE3413829A1 (de) | 1985-10-17 |
| DE3413829C2 true DE3413829C2 (en, 2012) | 1989-05-11 |
Family
ID=6233407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843413829 Granted DE3413829A1 (de) | 1984-04-10 | 1984-04-10 | Mos-dosimeter |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4788581A (en, 2012) |
| EP (1) | EP0158588A3 (en, 2012) |
| JP (1) | JPS60230078A (en, 2012) |
| DE (1) | DE3413829A1 (en, 2012) |
| DK (1) | DK139285A (en, 2012) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19611451A1 (de) * | 1995-03-24 | 1996-10-02 | Morita Mfg | Digitales Röntgenbilderzeugungsgerät |
| WO1997002609A1 (en) * | 1995-06-30 | 1997-01-23 | Rados Technology Oy | Photodetector involving a mosfet having a floating gate |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0269335B1 (en) * | 1986-11-24 | 1992-07-08 | AT&T Corp. | Radiation-sensitive device |
| US5332903A (en) * | 1991-03-19 | 1994-07-26 | California Institute Of Technology | p-MOSFET total dose dosimeter |
| GB9200569D0 (en) * | 1992-01-11 | 1992-03-11 | Atomic Energy Authority Uk | Semiconductor dosimeter |
| FI934784A0 (fi) * | 1993-10-28 | 1993-10-28 | Rados Technology Oy | Straolningsdetektor |
| FI954041A0 (fi) * | 1995-08-28 | 1995-08-28 | Hidex Oy | Foerfarande foer detektering av radioaktivitet i ett stoedmaterial genom direkt detektering av jonisation |
| US6141243A (en) * | 1996-11-12 | 2000-10-31 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Sensor element |
| DE59608775D1 (de) | 1996-11-12 | 2002-03-28 | Fraunhofer Ges Forschung | Sensorelement |
| CA2215369C (en) | 1997-09-12 | 2008-11-18 | Nicholas Garry Tarr | Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein |
| JP3298509B2 (ja) * | 1998-06-12 | 2002-07-02 | 日本電気株式会社 | 半導体装置の製造方法 |
| WO2000028337A2 (en) | 1998-11-06 | 2000-05-18 | Onguard Systems, Inc. | Electronic circuit with a non-continuous discharge path |
| US6414318B1 (en) | 1998-11-06 | 2002-07-02 | Bridge Semiconductor Corporation | Electronic circuit |
| FR2805889B1 (fr) * | 2000-03-03 | 2002-05-31 | Centre Nat Rech Scient | Dispositif amplificateur pour capteurs et systeme de mesure d'une grandeur physique equipe d'un tel dispositif |
| EP1583150A1 (en) * | 2004-03-31 | 2005-10-05 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Image sensor with large-area, high-sensitivity and high-speed pixels |
| EP1624490B1 (en) * | 2004-08-04 | 2018-10-03 | Heptagon Micro Optics Pte. Ltd. | Large-area pixel for use in an image sensor |
| EP2242536A2 (en) * | 2008-01-30 | 2010-10-27 | Cardiac Pacemakers, Inc. | Method and apparatus for radiation effects detection |
| WO2010046904A2 (en) | 2008-09-11 | 2010-04-29 | Indian Institute Of Technology Bombay | Method and device for determining ionizing radiation |
| US8212218B2 (en) * | 2009-11-30 | 2012-07-03 | International Business Machines Corporation | Dosimeter powered by passive RF absorption |
| DE102012012296B4 (de) * | 2012-06-20 | 2014-01-23 | Oliver Boslau | Vorrichtung zum Detektieren elektromagnetischer Strahlung sowie Verfahren zum Betrieb einer solchen Vorrichtung |
| US9213112B2 (en) | 2013-03-15 | 2015-12-15 | Starfire Industries, Llc | Neutron radiation sensor |
| US10782420B2 (en) | 2017-12-18 | 2020-09-22 | Thermo Eberline Llc | Range-extended dosimeter |
| CN110581149A (zh) * | 2019-08-29 | 2019-12-17 | 天津大学 | 采用浮栅结构的软x射线成像探测器及系统 |
| IT202100000605A1 (it) | 2021-01-14 | 2022-07-14 | Blackcat Beyond | Dosimetro al silicio indossabile, resistente alle radiazioni, basato sulla tecnologia dei sensori a gate flottante |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
| US3569704A (en) * | 1968-08-15 | 1971-03-09 | Atomic Energy Commission | Radiation dosimeter |
| US3999209A (en) * | 1970-09-14 | 1976-12-21 | Rockwell International Corporation | Process for radiation hardening of MOS devices and device produced thereby |
| DE2415425B2 (de) * | 1974-03-29 | 1977-11-03 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zur ein- und umspeicherung verschiedener einspeicherbarer zustaende |
| JPS5456701A (en) * | 1977-10-14 | 1979-05-08 | Sanyo Electric Co Ltd | Preset receiving device |
| US4213045A (en) * | 1978-08-29 | 1980-07-15 | The United States Of America As Represented By The Secretary Of The Air Force | Metal nitride oxide semiconductor (MNOS) dosimeter |
| DE2912859A1 (de) * | 1979-03-30 | 1980-10-09 | Siemens Ag | Ig-fet mit schwebendem speichergate und mit steuergate |
-
1984
- 1984-04-10 DE DE19843413829 patent/DE3413829A1/de active Granted
-
1985
- 1985-03-28 DK DK139285A patent/DK139285A/da not_active Application Discontinuation
- 1985-03-29 US US06/717,703 patent/US4788581A/en not_active Expired - Fee Related
- 1985-04-01 EP EP85730049A patent/EP0158588A3/de not_active Withdrawn
- 1985-04-09 JP JP60075264A patent/JPS60230078A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19611451A1 (de) * | 1995-03-24 | 1996-10-02 | Morita Mfg | Digitales Röntgenbilderzeugungsgerät |
| DE19611451B4 (de) * | 1995-03-24 | 2011-11-17 | J. Morita Mfg. Corp. | Digitales Röntgenbilderzeugungsgerät |
| WO1997002609A1 (en) * | 1995-06-30 | 1997-01-23 | Rados Technology Oy | Photodetector involving a mosfet having a floating gate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60230078A (ja) | 1985-11-15 |
| DK139285D0 (da) | 1985-03-28 |
| DK139285A (da) | 1985-10-11 |
| EP0158588A3 (de) | 1987-01-14 |
| US4788581A (en) | 1988-11-29 |
| DE3413829A1 (de) | 1985-10-17 |
| EP0158588A2 (de) | 1985-10-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8127 | New person/name/address of the applicant |
Owner name: HAHN-MEITNER-INSTITUT BERLIN GMBH, 1000 BERLIN, DE |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |