DE3878339T2 - Detektor fuer ionisierende teilchen. - Google Patents

Detektor fuer ionisierende teilchen.

Info

Publication number
DE3878339T2
DE3878339T2 DE19883878339 DE3878339T DE3878339T2 DE 3878339 T2 DE3878339 T2 DE 3878339T2 DE 19883878339 DE19883878339 DE 19883878339 DE 3878339 T DE3878339 T DE 3878339T DE 3878339 T2 DE3878339 T2 DE 3878339T2
Authority
DE
Germany
Prior art keywords
particle detector
ionizing particle
ionizing
detector
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19883878339
Other languages
English (en)
Other versions
DE3878339D1 (de
Inventor
Raymond Guye
Raymond Vuilleumier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Safran Colibrys SA
Original Assignee
Centre Suisse D'electronique Et De Microtechnique Sa Neuenburg/neuchatel Ch
Centre Suisse dElectronique et Microtechnique SA CSEM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Suisse D'electronique Et De Microtechnique Sa Neuenburg/neuchatel Ch, Centre Suisse dElectronique et Microtechnique SA CSEM filed Critical Centre Suisse D'electronique Et De Microtechnique Sa Neuenburg/neuchatel Ch
Publication of DE3878339D1 publication Critical patent/DE3878339D1/de
Application granted granted Critical
Publication of DE3878339T2 publication Critical patent/DE3878339T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
DE19883878339 1987-07-17 1988-06-30 Detektor fuer ionisierende teilchen. Expired - Fee Related DE3878339T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8710118A FR2618258B1 (fr) 1987-07-17 1987-07-17 Detecteur de particules ionisantes.

Publications (2)

Publication Number Publication Date
DE3878339D1 DE3878339D1 (de) 1993-03-25
DE3878339T2 true DE3878339T2 (de) 1993-08-26

Family

ID=9353250

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883878339 Expired - Fee Related DE3878339T2 (de) 1987-07-17 1988-06-30 Detektor fuer ionisierende teilchen.

Country Status (4)

Country Link
EP (1) EP0302820B1 (de)
JP (1) JP2608311B2 (de)
DE (1) DE3878339T2 (de)
FR (1) FR2618258B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211897A (ja) * 1984-04-05 1985-10-24 日本電気株式会社 多層配線基板
GB9213719D0 (en) * 1992-06-27 1992-08-12 Atomic Energy Authority Uk Pin diode
JPH07235741A (ja) * 1993-12-27 1995-09-05 Ngk Spark Plug Co Ltd 多層配線基板
EP0730304B1 (de) * 1995-02-27 2001-10-17 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Halbleiterteilchendetektor und Verfahren zu seiner Herstellung
DE69935664D1 (de) 1999-06-15 2007-05-10 St Microelectronics Srl Monolithischer Halbleiterteilchendetektor und Verfahren zu seiner Herstellung
CN1268321C (zh) * 2001-07-13 2006-08-09 那野伽利阿株式会社 内部包有药物的高分子胶束的冻结干燥用组合物和该胶束的制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837607A (en) * 1984-04-25 1989-06-06 Josef Kemmer Large-area, low capacitance semiconductor arrangement

Also Published As

Publication number Publication date
EP0302820B1 (de) 1993-02-10
FR2618258B1 (fr) 1990-01-05
FR2618258A1 (fr) 1989-01-20
DE3878339D1 (de) 1993-03-25
JPS6437879A (en) 1989-02-08
EP0302820A1 (de) 1989-02-08
JP2608311B2 (ja) 1997-05-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: COLIBRYS S.A., NEUCHATEL, CH

8339 Ceased/non-payment of the annual fee