DK139285A - Mos dosimeter - Google Patents
Mos dosimeter Download PDFInfo
- Publication number
- DK139285A DK139285A DK139285A DK139285A DK139285A DK 139285 A DK139285 A DK 139285A DK 139285 A DK139285 A DK 139285A DK 139285 A DK139285 A DK 139285A DK 139285 A DK139285 A DK 139285A
- Authority
- DK
- Denmark
- Prior art keywords
- mos dosimeter
- dosimeter
- mos
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/298—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation the devices being characterised by field-effect operation, e.g. MIS type detectors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19843413829 DE3413829A1 (de) | 1984-04-10 | 1984-04-10 | Mos-dosimeter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK139285D0 DK139285D0 (da) | 1985-03-28 |
| DK139285A true DK139285A (da) | 1985-10-11 |
Family
ID=6233407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK139285A DK139285A (da) | 1984-04-10 | 1985-03-28 | Mos dosimeter |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4788581A (en, 2012) |
| EP (1) | EP0158588A3 (en, 2012) |
| JP (1) | JPS60230078A (en, 2012) |
| DE (1) | DE3413829A1 (en, 2012) |
| DK (1) | DK139285A (en, 2012) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0269335B1 (en) * | 1986-11-24 | 1992-07-08 | AT&T Corp. | Radiation-sensitive device |
| US5332903A (en) * | 1991-03-19 | 1994-07-26 | California Institute Of Technology | p-MOSFET total dose dosimeter |
| GB9200569D0 (en) * | 1992-01-11 | 1992-03-11 | Atomic Energy Authority Uk | Semiconductor dosimeter |
| FI934784A0 (fi) * | 1993-10-28 | 1993-10-28 | Rados Technology Oy | Straolningsdetektor |
| JP3319905B2 (ja) * | 1995-03-24 | 2002-09-03 | 株式会社モリタ製作所 | デジタルｘ線撮影装置 |
| FI953240A0 (fi) * | 1995-06-30 | 1995-06-30 | Rados Technology Oy | Ljusdetektor |
| FI954041A0 (fi) * | 1995-08-28 | 1995-08-28 | Hidex Oy | Foerfarande foer detektering av radioaktivitet i ett stoedmaterial genom direkt detektering av jonisation |
| US6141243A (en) * | 1996-11-12 | 2000-10-31 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Sensor element |
| DE59608775D1 (de) | 1996-11-12 | 2002-03-28 | Fraunhofer Ges Forschung | Sensorelement |
| CA2215369C (en) | 1997-09-12 | 2008-11-18 | Nicholas Garry Tarr | Method of monitoring radiation using a floating gate field effect transistor dosimeter, and dosimeter for use therein |
| JP3298509B2 (ja) * | 1998-06-12 | 2002-07-02 | 日本電気株式会社 | 半導体装置の製造方法 |
| WO2000028337A2 (en) | 1998-11-06 | 2000-05-18 | Onguard Systems, Inc. | Electronic circuit with a non-continuous discharge path |
| US6414318B1 (en) | 1998-11-06 | 2002-07-02 | Bridge Semiconductor Corporation | Electronic circuit |
| FR2805889B1 (fr) * | 2000-03-03 | 2002-05-31 | Centre Nat Rech Scient | Dispositif amplificateur pour capteurs et systeme de mesure d'une grandeur physique equipe d'un tel dispositif |
| EP1583150A1 (en) * | 2004-03-31 | 2005-10-05 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Image sensor with large-area, high-sensitivity and high-speed pixels |
| EP1624490B1 (en) * | 2004-08-04 | 2018-10-03 | Heptagon Micro Optics Pte. Ltd. | Large-area pixel for use in an image sensor |
| EP2242536A2 (en) * | 2008-01-30 | 2010-10-27 | Cardiac Pacemakers, Inc. | Method and apparatus for radiation effects detection |
| WO2010046904A2 (en) | 2008-09-11 | 2010-04-29 | Indian Institute Of Technology Bombay | Method and device for determining ionizing radiation |
| US8212218B2 (en) * | 2009-11-30 | 2012-07-03 | International Business Machines Corporation | Dosimeter powered by passive RF absorption |
| DE102012012296B4 (de) * | 2012-06-20 | 2014-01-23 | Oliver Boslau | Vorrichtung zum Detektieren elektromagnetischer Strahlung sowie Verfahren zum Betrieb einer solchen Vorrichtung |
| US9213112B2 (en) | 2013-03-15 | 2015-12-15 | Starfire Industries, Llc | Neutron radiation sensor |
| US10782420B2 (en) | 2017-12-18 | 2020-09-22 | Thermo Eberline Llc | Range-extended dosimeter |
| CN110581149A (zh) * | 2019-08-29 | 2019-12-17 | 天津大学 | 采用浮栅结构的软x射线成像探测器及系统 |
| IT202100000605A1 (it) | 2021-01-14 | 2022-07-14 | Blackcat Beyond | Dosimetro al silicio indossabile, resistente alle radiazioni, basato sulla tecnologia dei sensori a gate flottante |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
| US3569704A (en) * | 1968-08-15 | 1971-03-09 | Atomic Energy Commission | Radiation dosimeter |
| US3999209A (en) * | 1970-09-14 | 1976-12-21 | Rockwell International Corporation | Process for radiation hardening of MOS devices and device produced thereby |
| DE2415425B2 (de) * | 1974-03-29 | 1977-11-03 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zur ein- und umspeicherung verschiedener einspeicherbarer zustaende |
| JPS5456701A (en) * | 1977-10-14 | 1979-05-08 | Sanyo Electric Co Ltd | Preset receiving device |
| US4213045A (en) * | 1978-08-29 | 1980-07-15 | The United States Of America As Represented By The Secretary Of The Air Force | Metal nitride oxide semiconductor (MNOS) dosimeter |
| DE2912859A1 (de) * | 1979-03-30 | 1980-10-09 | Siemens Ag | Ig-fet mit schwebendem speichergate und mit steuergate |
-
1984
- 1984-04-10 DE DE19843413829 patent/DE3413829A1/de active Granted
-
1985
- 1985-03-28 DK DK139285A patent/DK139285A/da not_active Application Discontinuation
- 1985-03-29 US US06/717,703 patent/US4788581A/en not_active Expired - Fee Related
- 1985-04-01 EP EP85730049A patent/EP0158588A3/de not_active Withdrawn
- 1985-04-09 JP JP60075264A patent/JPS60230078A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60230078A (ja) | 1985-11-15 |
| DK139285D0 (da) | 1985-03-28 |
| DE3413829C2 (en, 2012) | 1989-05-11 |
| EP0158588A3 (de) | 1987-01-14 |
| US4788581A (en) | 1988-11-29 |
| DE3413829A1 (de) | 1985-10-17 |
| EP0158588A2 (de) | 1985-10-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PBP | Patent lapsed | ||
| AHB | Application shelved due to non-payment |