JPH0131308B2 - - Google Patents

Info

Publication number
JPH0131308B2
JPH0131308B2 JP55009606A JP960680A JPH0131308B2 JP H0131308 B2 JPH0131308 B2 JP H0131308B2 JP 55009606 A JP55009606 A JP 55009606A JP 960680 A JP960680 A JP 960680A JP H0131308 B2 JPH0131308 B2 JP H0131308B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
insulating layer
polycrystalline silicon
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55009606A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56107571A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP960680A priority Critical patent/JPS56107571A/ja
Publication of JPS56107571A publication Critical patent/JPS56107571A/ja
Publication of JPH0131308B2 publication Critical patent/JPH0131308B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP960680A 1980-01-30 1980-01-30 Semiconductor memory storage device Granted JPS56107571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP960680A JPS56107571A (en) 1980-01-30 1980-01-30 Semiconductor memory storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP960680A JPS56107571A (en) 1980-01-30 1980-01-30 Semiconductor memory storage device

Publications (2)

Publication Number Publication Date
JPS56107571A JPS56107571A (en) 1981-08-26
JPH0131308B2 true JPH0131308B2 (en, 2012) 1989-06-26

Family

ID=11724955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP960680A Granted JPS56107571A (en) 1980-01-30 1980-01-30 Semiconductor memory storage device

Country Status (1)

Country Link
JP (1) JPS56107571A (en, 2012)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176757A (en) * 1981-04-22 1982-10-30 Nec Corp Semiconductor device
JPS58204568A (ja) * 1982-05-24 1983-11-29 Hitachi Ltd 半導体装置
JPS5928373A (ja) * 1982-08-09 1984-02-15 Nec Corp 半導体装置
JPS6151964A (ja) * 1984-08-22 1986-03-14 Nec Corp 半導体装置
JPS6151965A (ja) * 1984-08-22 1986-03-14 Nec Corp 半導体記憶装置
JPH0669081B2 (ja) * 1985-01-23 1994-08-31 三菱電機株式会社 半導体メモリの製造方法
JPS63246866A (ja) * 1987-04-01 1988-10-13 Mitsubishi Electric Corp １トランジスタ型ダイナミツクメモリセルの製造方法
KR960701449A (ko) * 1993-03-17 1996-02-24 더글라스 클린트 랜덤 액세스 메모리에 기초하여 구성할 수 있는 어레이(random access memory(ram) based configurable arrays)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519820A (en) * 1978-07-27 1980-02-12 Nec Corp Semiconductor device
JPS5670657A (en) * 1979-11-14 1981-06-12 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory device

Also Published As

Publication number Publication date
JPS56107571A (en) 1981-08-26

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