JPS60207384A - 高電圧トランジスタ - Google Patents

高電圧トランジスタ

Info

Publication number
JPS60207384A
JPS60207384A JP60043548A JP4354885A JPS60207384A JP S60207384 A JPS60207384 A JP S60207384A JP 60043548 A JP60043548 A JP 60043548A JP 4354885 A JP4354885 A JP 4354885A JP S60207384 A JPS60207384 A JP S60207384A
Authority
JP
Japan
Prior art keywords
electrode
amorphous silicon
source electrode
source
electrode means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60043548A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0558584B2 (enExample
Inventor
フシング　チエン　ツアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JPS60207384A publication Critical patent/JPS60207384A/ja
Publication of JPH0558584B2 publication Critical patent/JPH0558584B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical

Landscapes

  • Thin Film Transistor (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
JP60043548A 1984-03-12 1985-03-05 高電圧トランジスタ Granted JPS60207384A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58848584A 1984-03-12 1984-03-12
US588485 1984-03-12

Publications (2)

Publication Number Publication Date
JPS60207384A true JPS60207384A (ja) 1985-10-18
JPH0558584B2 JPH0558584B2 (enExample) 1993-08-26

Family

ID=24354026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60043548A Granted JPS60207384A (ja) 1984-03-12 1985-03-05 高電圧トランジスタ

Country Status (4)

Country Link
EP (1) EP0156528B1 (enExample)
JP (1) JPS60207384A (enExample)
CA (1) CA1227580A (enExample)
DE (1) DE3581549D1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319371A (ja) * 1989-05-24 1991-01-28 Xerox Corp 高電圧薄膜トランジスタ
JPH03105927A (ja) * 1989-09-13 1991-05-02 Xerox Corp 電子装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4757361A (en) * 1986-07-23 1988-07-12 International Business Machines Corporation Amorphous thin film transistor device
JPH0714009B2 (ja) * 1987-10-15 1995-02-15 日本電気株式会社 Ｍｏｓ型半導体記憶回路装置
US4984041A (en) * 1989-07-28 1991-01-08 Xerox Corporation High voltage thin film transistor with second control electrode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115864A (ja) * 1981-12-28 1983-07-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115864A (ja) * 1981-12-28 1983-07-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319371A (ja) * 1989-05-24 1991-01-28 Xerox Corp 高電圧薄膜トランジスタ
JPH03105927A (ja) * 1989-09-13 1991-05-02 Xerox Corp 電子装置

Also Published As

Publication number Publication date
EP0156528A2 (en) 1985-10-02
EP0156528B1 (en) 1991-01-30
JPH0558584B2 (enExample) 1993-08-26
EP0156528A3 (en) 1987-08-05
CA1227580A (en) 1987-09-29
DE3581549D1 (de) 1991-03-07

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