DE3581549D1 - Duennfilm-transistor fuer hohe spannungen. - Google Patents

Duennfilm-transistor fuer hohe spannungen.

Info

Publication number
DE3581549D1
DE3581549D1 DE8585301362T DE3581549T DE3581549D1 DE 3581549 D1 DE3581549 D1 DE 3581549D1 DE 8585301362 T DE8585301362 T DE 8585301362T DE 3581549 T DE3581549 T DE 3581549T DE 3581549 D1 DE3581549 D1 DE 3581549D1
Authority
DE
Germany
Prior art keywords
thin film
high voltage
film transistor
transistor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585301362T
Other languages
German (de)
English (en)
Inventor
Hsing Chien Tuan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE3581549D1 publication Critical patent/DE3581549D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
DE8585301362T 1984-03-12 1985-02-28 Duennfilm-transistor fuer hohe spannungen. Expired - Fee Related DE3581549D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58848584A 1984-03-12 1984-03-12

Publications (1)

Publication Number Publication Date
DE3581549D1 true DE3581549D1 (de) 1991-03-07

Family

ID=24354026

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585301362T Expired - Fee Related DE3581549D1 (de) 1984-03-12 1985-02-28 Duennfilm-transistor fuer hohe spannungen.

Country Status (4)

Country Link
EP (1) EP0156528B1 (enExample)
JP (1) JPS60207384A (enExample)
CA (1) CA1227580A (enExample)
DE (1) DE3581549D1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4757361A (en) * 1986-07-23 1988-07-12 International Business Machines Corporation Amorphous thin film transistor device
JPH0714009B2 (ja) * 1987-10-15 1995-02-15 日本電気株式会社 Ｍｏｓ型半導体記憶回路装置
US4998146A (en) * 1989-05-24 1991-03-05 Xerox Corporation High voltage thin film transistor
US4984041A (en) * 1989-07-28 1991-01-08 Xerox Corporation High voltage thin film transistor with second control electrode
JPH0824192B2 (ja) * 1989-09-13 1996-03-06 ゼロックス コーポレーション 電子装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115864A (ja) * 1981-12-28 1983-07-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置

Also Published As

Publication number Publication date
EP0156528B1 (en) 1991-01-30
JPH0558584B2 (enExample) 1993-08-26
CA1227580A (en) 1987-09-29
EP0156528A2 (en) 1985-10-02
JPS60207384A (ja) 1985-10-18
EP0156528A3 (en) 1987-08-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee