CA1227580A - High voltage thin film transistor - Google Patents

High voltage thin film transistor

Info

Publication number
CA1227580A
CA1227580A CA000475501A CA475501A CA1227580A CA 1227580 A CA1227580 A CA 1227580A CA 000475501 A CA000475501 A CA 000475501A CA 475501 A CA475501 A CA 475501A CA 1227580 A CA1227580 A CA 1227580A
Authority
CA
Canada
Prior art keywords
electrode means
gate electrode
high voltage
source electrode
recited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000475501A
Other languages
English (en)
French (fr)
Inventor
Hsing C. Tuan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of CA1227580A publication Critical patent/CA1227580A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical

Landscapes

  • Thin Film Transistor (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
CA000475501A 1984-03-12 1985-02-28 High voltage thin film transistor Expired CA1227580A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58848584A 1984-03-12 1984-03-12
US588,485 1984-03-12

Publications (1)

Publication Number Publication Date
CA1227580A true CA1227580A (en) 1987-09-29

Family

ID=24354026

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000475501A Expired CA1227580A (en) 1984-03-12 1985-02-28 High voltage thin film transistor

Country Status (4)

Country Link
EP (1) EP0156528B1 (enExample)
JP (1) JPS60207384A (enExample)
CA (1) CA1227580A (enExample)
DE (1) DE3581549D1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4757361A (en) * 1986-07-23 1988-07-12 International Business Machines Corporation Amorphous thin film transistor device
JPH0714009B2 (ja) * 1987-10-15 1995-02-15 日本電気株式会社 Mos型半導体記憶回路装置
US4998146A (en) * 1989-05-24 1991-03-05 Xerox Corporation High voltage thin film transistor
US4984041A (en) * 1989-07-28 1991-01-08 Xerox Corporation High voltage thin film transistor with second control electrode
JPH0824192B2 (ja) * 1989-09-13 1996-03-06 ゼロックス コーポレーション 電子装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115864A (ja) * 1981-12-28 1983-07-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置

Also Published As

Publication number Publication date
EP0156528A2 (en) 1985-10-02
EP0156528B1 (en) 1991-01-30
JPH0558584B2 (enExample) 1993-08-26
JPS60207384A (ja) 1985-10-18
EP0156528A3 (en) 1987-08-05
DE3581549D1 (de) 1991-03-07

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Legal Events

Date Code Title Description
MKEX Expiry