JPH0558584B2 - - Google Patents
Info
- Publication number
- JPH0558584B2 JPH0558584B2 JP60043548A JP4354885A JPH0558584B2 JP H0558584 B2 JPH0558584 B2 JP H0558584B2 JP 60043548 A JP60043548 A JP 60043548A JP 4354885 A JP4354885 A JP 4354885A JP H0558584 B2 JPH0558584 B2 JP H0558584B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- gate electrode
- electrode
- gate
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
- H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
Landscapes
- Thin Film Transistor (AREA)
- Amplifiers (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58848584A | 1984-03-12 | 1984-03-12 | |
| US588485 | 1984-03-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60207384A JPS60207384A (ja) | 1985-10-18 |
| JPH0558584B2 true JPH0558584B2 (enExample) | 1993-08-26 |
Family
ID=24354026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60043548A Granted JPS60207384A (ja) | 1984-03-12 | 1985-03-05 | 高電圧トランジスタ |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0156528B1 (enExample) |
| JP (1) | JPS60207384A (enExample) |
| CA (1) | CA1227580A (enExample) |
| DE (1) | DE3581549D1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4757361A (en) * | 1986-07-23 | 1988-07-12 | International Business Machines Corporation | Amorphous thin film transistor device |
| JPH0714009B2 (ja) * | 1987-10-15 | 1995-02-15 | 日本電気株式会社 | Ｍｏｓ型半導体記憶回路装置 |
| US4998146A (en) * | 1989-05-24 | 1991-03-05 | Xerox Corporation | High voltage thin film transistor |
| US4984041A (en) * | 1989-07-28 | 1991-01-08 | Xerox Corporation | High voltage thin film transistor with second control electrode |
| JPH0824192B2 (ja) * | 1989-09-13 | 1996-03-06 | ゼロックス コーポレーション | 電子装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58115864A (ja) * | 1981-12-28 | 1983-07-09 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
-
1985
- 1985-02-28 CA CA000475501A patent/CA1227580A/en not_active Expired
- 1985-02-28 DE DE8585301362T patent/DE3581549D1/de not_active Expired - Fee Related
- 1985-02-28 EP EP85301362A patent/EP0156528B1/en not_active Expired
- 1985-03-05 JP JP60043548A patent/JPS60207384A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60207384A (ja) | 1985-10-18 |
| EP0156528A3 (en) | 1987-08-05 |
| EP0156528B1 (en) | 1991-01-30 |
| CA1227580A (en) | 1987-09-29 |
| DE3581549D1 (de) | 1991-03-07 |
| EP0156528A2 (en) | 1985-10-02 |
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