JPS60191096A - 気相成長方法 - Google Patents

気相成長方法

Info

Publication number
JPS60191096A
JPS60191096A JP4285184A JP4285184A JPS60191096A JP S60191096 A JPS60191096 A JP S60191096A JP 4285184 A JP4285184 A JP 4285184A JP 4285184 A JP4285184 A JP 4285184A JP S60191096 A JPS60191096 A JP S60191096A
Authority
JP
Japan
Prior art keywords
film thickness
growth
flow rate
vapor phase
partial pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4285184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0360800B2 (enrdf_load_html_response
Inventor
Yukio Noda
野田　行雄
Yukitoshi Kushiro
久代　行俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP4285184A priority Critical patent/JPS60191096A/ja
Publication of JPS60191096A publication Critical patent/JPS60191096A/ja
Publication of JPH0360800B2 publication Critical patent/JPH0360800B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP4285184A 1984-03-08 1984-03-08 気相成長方法 Granted JPS60191096A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4285184A JPS60191096A (ja) 1984-03-08 1984-03-08 気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4285184A JPS60191096A (ja) 1984-03-08 1984-03-08 気相成長方法

Publications (2)

Publication Number Publication Date
JPS60191096A true JPS60191096A (ja) 1985-09-28
JPH0360800B2 JPH0360800B2 (enrdf_load_html_response) 1991-09-17

Family

ID=12647513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4285184A Granted JPS60191096A (ja) 1984-03-08 1984-03-08 気相成長方法

Country Status (1)

Country Link
JP (1) JPS60191096A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818357A (en) * 1987-05-06 1989-04-04 Brown University Research Foundation Method and apparatus for sputter deposition of a semiconductor homojunction and semiconductor homojunction products created by same
US5402748A (en) * 1992-04-09 1995-04-04 Fujitsu Limited Method of growing a compound semiconductor film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58208200A (ja) * 1982-05-31 1983-12-03 Nippon Telegr & Teleph Corp <Ntt> ＩｎＰの選択気相エピタキシャル成長法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58208200A (ja) * 1982-05-31 1983-12-03 Nippon Telegr & Teleph Corp <Ntt> ＩｎＰの選択気相エピタキシャル成長法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818357A (en) * 1987-05-06 1989-04-04 Brown University Research Foundation Method and apparatus for sputter deposition of a semiconductor homojunction and semiconductor homojunction products created by same
US5402748A (en) * 1992-04-09 1995-04-04 Fujitsu Limited Method of growing a compound semiconductor film

Also Published As

Publication number Publication date
JPH0360800B2 (enrdf_load_html_response) 1991-09-17

Similar Documents

Publication Publication Date Title
JP2008066490A (ja) 気相成長装置
JP3198912B2 (ja) ３−５族化合物半導体の製造方法
JP4690906B2 (ja) 炭化珪素単結晶育成用種結晶及びその製造方法並びに炭化珪素単結晶の製造方法
JPH05291140A (ja) 化合物半導体薄膜の成長方法
JPS60191096A (ja) 気相成長方法
Yamaguchi et al. Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy
KR20230149989A (ko) 질화갈륨 단결정 분리 방법
JP2008303136A (ja) 化合物半導体基板の製造方法
JP2005203418A (ja) 窒化物系化合物半導体基板及びその製造方法
KR20240074430A (ko) 에피택셜 웨이퍼의 제조 방법
JP2021082641A (ja) エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
JP2002289538A (ja) 半導体素子の製造方法及び半導体素子
JPS5984417A (ja) ３−５族混晶半導体装置
JPH0547668A (ja) 化合物半導体結晶成長方法
JP2853226B2 (ja) 半導体装置およびその製造方法
JP3134315B2 (ja) 化合物半導体結晶の選択成長方法
JP3074846B2 (ja) 半導体装置の製造方法
JPH01173708A (ja) 半導体素子
JP2687862B2 (ja) 化合物半導体薄膜の形成方法
JPH04113614A (ja) 化合物半導体層の気相成長法
JP2784384B2 (ja) 気相成長方法
JPH08148440A (ja) Ｉｉ−ｖｉ族化合物半導体の選択成長方法
JPH04182385A (ja) 結晶成長法
JPS5922319A (ja) ３−５族半導体の気相成長方法
JPS63287013A (ja) ウエハ