JPS60189221A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60189221A
JPS60189221A JP59045081A JP4508184A JPS60189221A JP S60189221 A JPS60189221 A JP S60189221A JP 59045081 A JP59045081 A JP 59045081A JP 4508184 A JP4508184 A JP 4508184A JP S60189221 A JPS60189221 A JP S60189221A
Authority
JP
Japan
Prior art keywords
thin film
film
polysilicon
insulating film
silicon thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59045081A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0574218B2 (enExample
Inventor
Akira Kuroyanagi
晃 黒柳
Akihiro Niimi
彰浩 新美
Shikio Morita
森田 信貴男
Shigeo Kanazawa
重雄 金澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP59045081A priority Critical patent/JPS60189221A/ja
Publication of JPS60189221A publication Critical patent/JPS60189221A/ja
Publication of JPH0574218B2 publication Critical patent/JPH0574218B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP59045081A 1984-03-08 1984-03-08 半導体装置の製造方法 Granted JPS60189221A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59045081A JPS60189221A (ja) 1984-03-08 1984-03-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59045081A JPS60189221A (ja) 1984-03-08 1984-03-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60189221A true JPS60189221A (ja) 1985-09-26
JPH0574218B2 JPH0574218B2 (enExample) 1993-10-18

Family

ID=12709375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59045081A Granted JPS60189221A (ja) 1984-03-08 1984-03-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60189221A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420074A (en) * 1990-07-05 1995-05-30 Kabushiki Kaisha Toshiba Method for burying low resistance material in a contact hole

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594015A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置及びその製造方法
JPS6024013A (ja) * 1983-07-20 1985-02-06 Toshiba Corp 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594015A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置及びその製造方法
JPS6024013A (ja) * 1983-07-20 1985-02-06 Toshiba Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420074A (en) * 1990-07-05 1995-05-30 Kabushiki Kaisha Toshiba Method for burying low resistance material in a contact hole

Also Published As

Publication number Publication date
JPH0574218B2 (enExample) 1993-10-18

Similar Documents

Publication Publication Date Title
US5466638A (en) Method of manufacturing a metal interconnect with high resistance to electromigration
JP2699921B2 (ja) 半導体装置の製造方法
JP3113800B2 (ja) 半導体装置の配線形成方法
US5510642A (en) Semiconductor device
EP0201250A2 (en) Process for making a contact arrangement for a semiconductor device
JPS60189221A (ja) 半導体装置の製造方法
JPH02143527A (ja) 配線形成方法
KR940004450B1 (ko) 반도체장치의 제조방법
JPS6242522A (ja) 半導体装置の製造方法
JP3359925B2 (ja) 半導体装置の製造方法
JP2797200B2 (ja) 多結晶シリコン電極およびその製造方法
JP3038875B2 (ja) 半導体装置の製造方法
JPH0682668B2 (ja) 半導体装置の製造方法
JPS6160580B2 (enExample)
EP0228183A2 (en) Method for manufacturing semiconductor device
JPS60147136A (ja) 半導体装置用電極・配線
JPH02106971A (ja) 半導体集積回路装置の製造方法
JP2875258B2 (ja) 半導体装置およびその製造方法
JP2638285B2 (ja) 半導体装置の製造方法
JPS63283161A (ja) 半導体装置とその製造方法
KR100268794B1 (ko) 반도체 소자의 도전 배선 형성방법
JPH05166937A (ja) 配線形成方法
JPS60115265A (ja) 半導体装置及びその製造方法
JPS62143422A (ja) 半導体装置の製造方法
JPH0290611A (ja) 半導体装置の製造方法