JPH0574218B2 - - Google Patents

Info

Publication number
JPH0574218B2
JPH0574218B2 JP59045081A JP4508184A JPH0574218B2 JP H0574218 B2 JPH0574218 B2 JP H0574218B2 JP 59045081 A JP59045081 A JP 59045081A JP 4508184 A JP4508184 A JP 4508184A JP H0574218 B2 JPH0574218 B2 JP H0574218B2
Authority
JP
Japan
Prior art keywords
thin film
opening
film
insulating film
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59045081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60189221A (ja
Inventor
Akira Kuroyanagi
Akihiro Niimi
Shikio Morita
Shigeo Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP59045081A priority Critical patent/JPS60189221A/ja
Publication of JPS60189221A publication Critical patent/JPS60189221A/ja
Publication of JPH0574218B2 publication Critical patent/JPH0574218B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP59045081A 1984-03-08 1984-03-08 半導体装置の製造方法 Granted JPS60189221A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59045081A JPS60189221A (ja) 1984-03-08 1984-03-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59045081A JPS60189221A (ja) 1984-03-08 1984-03-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60189221A JPS60189221A (ja) 1985-09-26
JPH0574218B2 true JPH0574218B2 (enExample) 1993-10-18

Family

ID=12709375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59045081A Granted JPS60189221A (ja) 1984-03-08 1984-03-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60189221A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680638B2 (ja) * 1990-07-05 1994-10-12 株式会社東芝 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594015A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置及びその製造方法
JPH0654768B2 (ja) * 1983-07-20 1994-07-20 株式会社東芝 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS60189221A (ja) 1985-09-26

Similar Documents

Publication Publication Date Title
US4448632A (en) Method of fabricating semiconductor devices
EP0227085B1 (en) A method of manufacturing igfets having minimal junction depth using epitaxial recrystallization
US4808546A (en) SOI process for forming a thin film transistor using solid phase epitaxy
US4577396A (en) Method of forming electrical contact to a semiconductor substrate via a metallic silicide or silicon alloy layer formed in the substrate
US5510642A (en) Semiconductor device
US6703268B2 (en) Method to fabricate an intrinsic polycrystalline silicon film
JPH08293465A (ja) 半導体装置の製造方法
EP0113522A2 (en) The manufacture of semiconductor devices
JPS58116764A (ja) 半導体装置の製造方法
EP0201250A2 (en) Process for making a contact arrangement for a semiconductor device
JPH08102543A (ja) 結晶化方法及びこれを用いた薄膜トランジスタの製造方法
JPH0574218B2 (enExample)
KR940004450B1 (ko) 반도체장치의 제조방법
JPH04221821A (ja) 半導体装置の製造方法
JPH02864B2 (enExample)
JP2797200B2 (ja) 多結晶シリコン電極およびその製造方法
JP3533477B2 (ja) ポリシリコン膜の形成方法
JP3359925B2 (ja) 半導体装置の製造方法
JPH02241032A (ja) 配線形成方法
JP3038875B2 (ja) 半導体装置の製造方法
JP3291845B2 (ja) 結晶成長方法およびｍｏｓトランジスタのチャネル形成方法
KR0161384B1 (ko) 얇은 접합을 갖는 반도체 장치의 제조방법
JP2875258B2 (ja) 半導体装置およびその製造方法
JPS63198373A (ja) 半導体装置およびその製造方法
JPH02304937A (ja) Ｍｏｓ型電界効果トランジスタの形成法