JPS60140870A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60140870A
JPS60140870A JP58249224A JP24922483A JPS60140870A JP S60140870 A JPS60140870 A JP S60140870A JP 58249224 A JP58249224 A JP 58249224A JP 24922483 A JP24922483 A JP 24922483A JP S60140870 A JPS60140870 A JP S60140870A
Authority
JP
Japan
Prior art keywords
contact
layer
gate
substrate
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58249224A
Other languages
English (en)
Japanese (ja)
Other versions
JPH049372B2 (enrdf_load_stackoverflow
Inventor
Shigeo Kashiwagi
柏木　茂雄
Daisuke Matsunaga
大輔 松永
Hidehiko Shiraiwa
英彦 白岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58249224A priority Critical patent/JPS60140870A/ja
Publication of JPS60140870A publication Critical patent/JPS60140870A/ja
Publication of JPH049372B2 publication Critical patent/JPH049372B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58249224A 1983-12-28 1983-12-28 半導体装置の製造方法 Granted JPS60140870A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58249224A JPS60140870A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58249224A JPS60140870A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60140870A true JPS60140870A (ja) 1985-07-25
JPH049372B2 JPH049372B2 (enrdf_load_stackoverflow) 1992-02-20

Family

ID=17189759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58249224A Granted JPS60140870A (ja) 1983-12-28 1983-12-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60140870A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5341014A (en) * 1992-01-07 1994-08-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and a method of fabricating the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247690A (en) * 1975-10-14 1977-04-15 Matsushita Electric Ind Co Ltd Process for production of semiconductor device
JPS58137232A (ja) * 1982-02-09 1983-08-15 Nec Corp シリコン半導体装置およびその製法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247690A (en) * 1975-10-14 1977-04-15 Matsushita Electric Ind Co Ltd Process for production of semiconductor device
JPS58137232A (ja) * 1982-02-09 1983-08-15 Nec Corp シリコン半導体装置およびその製法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5341014A (en) * 1992-01-07 1994-08-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device and a method of fabricating the same

Also Published As

Publication number Publication date
JPH049372B2 (enrdf_load_stackoverflow) 1992-02-20

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