JPS6320386B2 - - Google Patents

Info

Publication number
JPS6320386B2
JPS6320386B2 JP56122003A JP12200381A JPS6320386B2 JP S6320386 B2 JPS6320386 B2 JP S6320386B2 JP 56122003 A JP56122003 A JP 56122003A JP 12200381 A JP12200381 A JP 12200381A JP S6320386 B2 JPS6320386 B2 JP S6320386B2
Authority
JP
Japan
Prior art keywords
silicon nitride
nitride film
film
manufacturing
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56122003A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5823482A (ja
Inventor
Masahiro Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP56122003A priority Critical patent/JPS5823482A/ja
Publication of JPS5823482A publication Critical patent/JPS5823482A/ja
Publication of JPS6320386B2 publication Critical patent/JPS6320386B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Non-Volatile Memory (AREA)
JP56122003A 1981-08-04 1981-08-04 半導体装置の製造方法 Granted JPS5823482A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56122003A JPS5823482A (ja) 1981-08-04 1981-08-04 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56122003A JPS5823482A (ja) 1981-08-04 1981-08-04 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5823482A JPS5823482A (ja) 1983-02-12
JPS6320386B2 true JPS6320386B2 (enrdf_load_stackoverflow) 1988-04-27

Family

ID=14825148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56122003A Granted JPS5823482A (ja) 1981-08-04 1981-08-04 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5823482A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2506726B2 (ja) * 1987-02-23 1996-06-12 松下電子工業株式会社 不揮発性記憶装置の製造方法
JP2718931B2 (ja) * 1987-09-29 1998-02-25 松下電子工業株式会社 半導体記憶装置の製造方法
US5194701A (en) * 1991-09-11 1993-03-16 N.P.L. Ltd. Speaker structure
JP2004095889A (ja) * 2002-08-30 2004-03-25 Fasl Japan Ltd 半導体記憶装置及びその製造方法
JP2009182211A (ja) * 2008-01-31 2009-08-13 Toshiba Corp 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913118A (enrdf_load_stackoverflow) * 1972-06-06 1974-02-05

Also Published As

Publication number Publication date
JPS5823482A (ja) 1983-02-12

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