JPS60136376A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60136376A
JPS60136376A JP58243810A JP24381083A JPS60136376A JP S60136376 A JPS60136376 A JP S60136376A JP 58243810 A JP58243810 A JP 58243810A JP 24381083 A JP24381083 A JP 24381083A JP S60136376 A JPS60136376 A JP S60136376A
Authority
JP
Japan
Prior art keywords
impurity
layer
impurity layer
semiconductor device
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58243810A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0560265B2 (enrdf_load_stackoverflow
Inventor
Hiroko Kaneko
兼子　宏子
Mitsumasa Koyanagi
光正 小柳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58243810A priority Critical patent/JPS60136376A/ja
Publication of JPS60136376A publication Critical patent/JPS60136376A/ja
Publication of JPH0560265B2 publication Critical patent/JPH0560265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
JP58243810A 1983-12-26 1983-12-26 半導体装置の製造方法 Granted JPS60136376A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58243810A JPS60136376A (ja) 1983-12-26 1983-12-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243810A JPS60136376A (ja) 1983-12-26 1983-12-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60136376A true JPS60136376A (ja) 1985-07-19
JPH0560265B2 JPH0560265B2 (enrdf_load_stackoverflow) 1993-09-01

Family

ID=17109267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58243810A Granted JPS60136376A (ja) 1983-12-26 1983-12-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60136376A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216364A (ja) * 1985-03-20 1986-09-26 Fujitsu Ltd 半導体装置
JPS6315465A (ja) * 1986-07-07 1988-01-22 Nec Corp 半導体装置の製造方法
JPH01204471A (ja) * 1988-02-09 1989-08-17 Mitsubishi Electric Corp 半導体装置の製造方法
US4935379A (en) * 1984-12-27 1990-06-19 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US5073514A (en) * 1989-07-18 1991-12-17 Sony Corporation Method of manufacturing mis semiconductor device
US5215936A (en) * 1986-10-09 1993-06-01 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device having a lightly-doped drain structure
US5292674A (en) * 1990-11-30 1994-03-08 Nec Corporation Method of making a metal-oxide semiconductor field-effect transistor
WO1994027325A1 (en) * 1993-05-07 1994-11-24 Vlsi Technology, Inc. Integrated circuit structure and method
EP0683531A3 (en) * 1994-05-16 1996-02-28 Samsung Electronics Co Ltd MOSFET with LDD structure and manufacturing method.
KR100292922B1 (ko) * 1996-11-29 2001-08-07 니시무로 타이죠 박막트랜지스터,박막트랜지스터의제조방법및액정표시장치
US6888191B2 (en) 2000-11-27 2005-05-03 Sharp Kabushiki Kaisha Semiconductor device and fabrication process therefor

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935379A (en) * 1984-12-27 1990-06-19 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JPS61216364A (ja) * 1985-03-20 1986-09-26 Fujitsu Ltd 半導体装置
US4928163A (en) * 1985-03-20 1990-05-22 Fujitsu Limited Semiconductor device
JPS6315465A (ja) * 1986-07-07 1988-01-22 Nec Corp 半導体装置の製造方法
US5215936A (en) * 1986-10-09 1993-06-01 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device having a lightly-doped drain structure
JPH01204471A (ja) * 1988-02-09 1989-08-17 Mitsubishi Electric Corp 半導体装置の製造方法
US5073514A (en) * 1989-07-18 1991-12-17 Sony Corporation Method of manufacturing mis semiconductor device
US5292674A (en) * 1990-11-30 1994-03-08 Nec Corporation Method of making a metal-oxide semiconductor field-effect transistor
WO1994027325A1 (en) * 1993-05-07 1994-11-24 Vlsi Technology, Inc. Integrated circuit structure and method
EP0683531A3 (en) * 1994-05-16 1996-02-28 Samsung Electronics Co Ltd MOSFET with LDD structure and manufacturing method.
KR100292922B1 (ko) * 1996-11-29 2001-08-07 니시무로 타이죠 박막트랜지스터,박막트랜지스터의제조방법및액정표시장치
US6888191B2 (en) 2000-11-27 2005-05-03 Sharp Kabushiki Kaisha Semiconductor device and fabrication process therefor

Also Published As

Publication number Publication date
JPH0560265B2 (enrdf_load_stackoverflow) 1993-09-01

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