JPS60136376A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS60136376A
JPS60136376A JP24381083A JP24381083A JPS60136376A JP S60136376 A JPS60136376 A JP S60136376A JP 24381083 A JP24381083 A JP 24381083A JP 24381083 A JP24381083 A JP 24381083A JP S60136376 A JPS60136376 A JP S60136376A
Authority
JP
Japan
Prior art keywords
lt
gt
layer
surface
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24381083A
Other versions
JPH0560265B2 (en
Inventor
Hiroko Kaneko
Mitsumasa Koyanagi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP24381083A priority Critical patent/JPH0560265B2/ja
Publication of JPS60136376A publication Critical patent/JPS60136376A/en
Publication of JPH0560265B2 publication Critical patent/JPH0560265B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode

Abstract

PURPOSE:To prevent mutual conductance among elements from reduction and improve the performance characteristics thereof in an MISFET of an LDD structure by a method wherein source/drain regions are made of a first, second, third layers diffused with different density of impurities. CONSTITUTION:A field insulating film 4 and thin oxide film 5 are selectively formed on the surface of a substrate. A polycrystalline Si layer 6 to act as gate is given treatment to be ready to serve as a conductive layer and is subjected to etching for the oxidation of its surface. An N type impurity, typically P, is injected into the oxidized surface. Next, an SiO2 film is deposited to cover the entire surface. The SiO2 film is exposed to anistropic etching for the formation of a side wall 8, composed of retained SiO2 film, on the sides of the gate 6. In a following process for the formation of an N<+> type impurity layer 2, the side wall 8 and gate electrode 6 serve as a mask for the introduction of an N type impurity into the Si substrate. The source/drain layers are constituted of three impurity-diffused layers, that is, an N<+> type layer 2, N<-> type layer 12, and an N<--> type layer 3.
JP24381083A 1983-12-26 1983-12-26 Expired - Lifetime JPH0560265B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24381083A JPH0560265B2 (en) 1983-12-26 1983-12-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24381083A JPH0560265B2 (en) 1983-12-26 1983-12-26

Publications (2)

Publication Number Publication Date
JPS60136376A true JPS60136376A (en) 1985-07-19
JPH0560265B2 JPH0560265B2 (en) 1993-09-01

Family

ID=17109267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24381083A Expired - Lifetime JPH0560265B2 (en) 1983-12-26 1983-12-26

Country Status (1)

Country Link
JP (1) JPH0560265B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0195607A2 (en) * 1985-03-20 1986-09-24 Fujitsu Limited Semiconductor device
JPS6315465A (en) * 1986-07-07 1988-01-22 Nec Corp Manufacture of semiconductor device
JPH01204471A (en) * 1988-02-09 1989-08-17 Mitsubishi Electric Corp Manufacture of semiconductor device
US4935379A (en) * 1984-12-27 1990-06-19 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US5073514A (en) * 1989-07-18 1991-12-17 Sony Corporation Method of manufacturing mis semiconductor device
EP0489559A1 (en) * 1990-11-30 1992-06-10 Nec Corporation LDD metal-oxide semiconductor field-effect transistor and method of making the same
US5215936A (en) * 1986-10-09 1993-06-01 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device having a lightly-doped drain structure
WO1994027325A1 (en) * 1993-05-07 1994-11-24 Vlsi Technology, Inc. Integrated circuit structure and method
EP0683531A3 (en) * 1994-05-16 1996-02-28 Samsung Electronics Co Ltd MOSFET with LDD structure and manufacturing method therefor.
US6888191B2 (en) 2000-11-27 2005-05-03 Sharp Kabushiki Kaisha Semiconductor device and fabrication process therefor

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935379A (en) * 1984-12-27 1990-06-19 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JPS61216364A (en) * 1985-03-20 1986-09-26 Fujitsu Ltd Semiconductor device
JPH053751B2 (en) * 1985-03-20 1993-01-18 Fujitsu Ltd
US4928163A (en) * 1985-03-20 1990-05-22 Fujitsu Limited Semiconductor device
EP0195607A2 (en) * 1985-03-20 1986-09-24 Fujitsu Limited Semiconductor device
JPS6315465A (en) * 1986-07-07 1988-01-22 Nec Corp Manufacture of semiconductor device
US5215936A (en) * 1986-10-09 1993-06-01 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device having a lightly-doped drain structure
JPH01204471A (en) * 1988-02-09 1989-08-17 Mitsubishi Electric Corp Manufacture of semiconductor device
US5073514A (en) * 1989-07-18 1991-12-17 Sony Corporation Method of manufacturing mis semiconductor device
EP0489559A1 (en) * 1990-11-30 1992-06-10 Nec Corporation LDD metal-oxide semiconductor field-effect transistor and method of making the same
US5292674A (en) * 1990-11-30 1994-03-08 Nec Corporation Method of making a metal-oxide semiconductor field-effect transistor
WO1994027325A1 (en) * 1993-05-07 1994-11-24 Vlsi Technology, Inc. Integrated circuit structure and method
EP0683531A3 (en) * 1994-05-16 1996-02-28 Samsung Electronics Co Ltd MOSFET with LDD structure and manufacturing method therefor.
US6888191B2 (en) 2000-11-27 2005-05-03 Sharp Kabushiki Kaisha Semiconductor device and fabrication process therefor

Also Published As

Publication number Publication date
JPH0560265B2 (en) 1993-09-01

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