JPS63257231A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS63257231A
JPS63257231A JP9222087A JP9222087A JPS63257231A JP S63257231 A JPS63257231 A JP S63257231A JP 9222087 A JP9222087 A JP 9222087A JP 9222087 A JP9222087 A JP 9222087A JP S63257231 A JPS63257231 A JP S63257231A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
oxide film
formed
gate electrode
diffused layer
side surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9222087A
Other versions
JPH0712084B2 (en )
Inventor
Isami Sakai
Shiyuuji Toyoda
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To form source and drain diffused layer characterized by less leakage currents in forming a sidewall, by removing a part other than the side surface of a gate electrode at the final stage of reactive ion etching.
CONSTITUTION: A channel stopper 102 of a p-type impurity diffused layer and a field oxide film 103 are formed in an inactive region of a p-type silicon substrate 101. Then a gate oxide film 105a is formed in an active region. Then, a gate electrode 104, a thin oxide film 105b, and an n- impurity diffused layer 106 are formed. Then, an oxide film 107 and a nitride film 108 are grown. Thereafter, another part is removed so that the nitride film 108 is made to remain on the side surface of the gate electrode 104. Then, the thin oxide film 105b is removed by wet etching. At this time, since the nitride film 108, which remains on the side surface of the gate electrode 104, is not etched, the width as a sidewall is made to remain sufficiently. Then, an n+ impurity diffused layer, an interlayer insulating film 111 and an Al electrode 112 are formed.
COPYRIGHT: (C)1988,JPO&Japio
JP9222087A 1987-04-14 1987-04-14 A method of manufacturing a semiconductor device Expired - Lifetime JPH0712084B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9222087A JPH0712084B2 (en) 1987-04-14 1987-04-14 A method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9222087A JPH0712084B2 (en) 1987-04-14 1987-04-14 A method of manufacturing a semiconductor device

Publications (2)

Publication Number Publication Date
JPS63257231A true true JPS63257231A (en) 1988-10-25
JPH0712084B2 JPH0712084B2 (en) 1995-02-08

Family

ID=14048363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9222087A Expired - Lifetime JPH0712084B2 (en) 1987-04-14 1987-04-14 A method of manufacturing a semiconductor device

Country Status (1)

Country Link
JP (1) JPH0712084B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02265250A (en) * 1989-04-05 1990-10-30 Nec Corp Manufacture of semiconductor device
US4978627A (en) * 1989-02-22 1990-12-18 Advanced Micro Devices, Inc. Method of detecting the width of lightly doped drain regions
US5132757A (en) * 1990-11-16 1992-07-21 Unisys Corporation LDD field effect transistor having a large reproducible saturation current
US5162882A (en) * 1990-06-08 1992-11-10 Texas Instruments Incorporated Semiconductor over insulator mesa
US5200357A (en) * 1990-06-12 1993-04-06 Thomson-Csf Method for the self-alignment of metal contacts on a semiconductor device, and self-aligned semiconductors
US5200351A (en) * 1989-10-23 1993-04-06 Advanced Micro Devices, Inc. Method of fabricating field effect transistors having lightly doped drain regions
JPH05121732A (en) * 1991-03-27 1993-05-18 American Teleph & Telegr Co <Att> Semiconductor device and integrated circuit and manufacturing method therefor
JPH05160146A (en) * 1991-12-05 1993-06-25 Sharp Corp Manufacture of semiconductor device
US7709874B2 (en) 2006-01-04 2010-05-04 Renesas Technology Corp. Semiconductor device having a split gate structure with a recessed top face electrode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145664A (en) * 1984-01-10 1985-08-01 Toshiba Corp Manufacture of semiconductor device
JPS61207076A (en) * 1985-03-12 1986-09-13 Nec Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145664A (en) * 1984-01-10 1985-08-01 Toshiba Corp Manufacture of semiconductor device
JPS61207076A (en) * 1985-03-12 1986-09-13 Nec Corp Manufacture of semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978627A (en) * 1989-02-22 1990-12-18 Advanced Micro Devices, Inc. Method of detecting the width of lightly doped drain regions
JPH02265250A (en) * 1989-04-05 1990-10-30 Nec Corp Manufacture of semiconductor device
US5200351A (en) * 1989-10-23 1993-04-06 Advanced Micro Devices, Inc. Method of fabricating field effect transistors having lightly doped drain regions
US5162882A (en) * 1990-06-08 1992-11-10 Texas Instruments Incorporated Semiconductor over insulator mesa
US5200357A (en) * 1990-06-12 1993-04-06 Thomson-Csf Method for the self-alignment of metal contacts on a semiconductor device, and self-aligned semiconductors
US5132757A (en) * 1990-11-16 1992-07-21 Unisys Corporation LDD field effect transistor having a large reproducible saturation current
JPH05121732A (en) * 1991-03-27 1993-05-18 American Teleph & Telegr Co <Att> Semiconductor device and integrated circuit and manufacturing method therefor
JPH05160146A (en) * 1991-12-05 1993-06-25 Sharp Corp Manufacture of semiconductor device
US7709874B2 (en) 2006-01-04 2010-05-04 Renesas Technology Corp. Semiconductor device having a split gate structure with a recessed top face electrode
US7816207B2 (en) 2006-01-04 2010-10-19 Renesas Technology Corp. Semiconductor device having electrode and manufacturing method thereof
US7939448B2 (en) 2006-01-04 2011-05-10 Renesas Electronics Corporation Semiconductor device having electrode and manufacturing method thereof

Also Published As

Publication number Publication date Type
JPH0712084B2 (en) 1995-02-08 grant

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