JPH0560265B2 - - Google Patents

Info

Publication number
JPH0560265B2
JPH0560265B2 JP58243810A JP24381083A JPH0560265B2 JP H0560265 B2 JPH0560265 B2 JP H0560265B2 JP 58243810 A JP58243810 A JP 58243810A JP 24381083 A JP24381083 A JP 24381083A JP H0560265 B2 JPH0560265 B2 JP H0560265B2
Authority
JP
Japan
Prior art keywords
impurity
gate
layer
impurity layer
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58243810A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60136376A (ja
Inventor
Hiroko Kaneko
Mitsumasa Koyanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58243810A priority Critical patent/JPS60136376A/ja
Publication of JPS60136376A publication Critical patent/JPS60136376A/ja
Publication of JPH0560265B2 publication Critical patent/JPH0560265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
JP58243810A 1983-12-26 1983-12-26 半導体装置の製造方法 Granted JPS60136376A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58243810A JPS60136376A (ja) 1983-12-26 1983-12-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243810A JPS60136376A (ja) 1983-12-26 1983-12-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60136376A JPS60136376A (ja) 1985-07-19
JPH0560265B2 true JPH0560265B2 (enrdf_load_stackoverflow) 1993-09-01

Family

ID=17109267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58243810A Granted JPS60136376A (ja) 1983-12-26 1983-12-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60136376A (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0187016B1 (en) * 1984-12-27 1991-02-20 Kabushiki Kaisha Toshiba Misfet with lightly doped drain and method of manufacturing the same
JPS61216364A (ja) * 1985-03-20 1986-09-26 Fujitsu Ltd 半導体装置
JPS6315465A (ja) * 1986-07-07 1988-01-22 Nec Corp 半導体装置の製造方法
US5215936A (en) * 1986-10-09 1993-06-01 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device having a lightly-doped drain structure
JPH01204471A (ja) * 1988-02-09 1989-08-17 Mitsubishi Electric Corp 半導体装置の製造方法
JP2760068B2 (ja) * 1989-07-18 1998-05-28 ソニー株式会社 Ｍｉｓ型半導体装置の製造方法
JPH04206933A (ja) * 1990-11-30 1992-07-28 Nec Corp 半導体装置
WO1994027325A1 (en) * 1993-05-07 1994-11-24 Vlsi Technology, Inc. Integrated circuit structure and method
KR100189964B1 (ko) * 1994-05-16 1999-06-01 윤종용 고전압 트랜지스터 및 그 제조방법
JP3762002B2 (ja) * 1996-11-29 2006-03-29 株式会社東芝 薄膜トランジスタ、及び液晶表示装置
JP3594550B2 (ja) 2000-11-27 2004-12-02 シャープ株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS60136376A (ja) 1985-07-19

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