JPS60131970A - 堆積膜形成法 - Google Patents
堆積膜形成法Info
- Publication number
- JPS60131970A JPS60131970A JP24123383A JP24123383A JPS60131970A JP S60131970 A JPS60131970 A JP S60131970A JP 24123383 A JP24123383 A JP 24123383A JP 24123383 A JP24123383 A JP 24123383A JP S60131970 A JPS60131970 A JP S60131970A
- Authority
- JP
- Japan
- Prior art keywords
- space
- film
- deposited film
- forming
- active species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24123383A JPS60131970A (ja) | 1983-12-20 | 1983-12-20 | 堆積膜形成法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24123383A JPS60131970A (ja) | 1983-12-20 | 1983-12-20 | 堆積膜形成法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60131970A true JPS60131970A (ja) | 1985-07-13 |
JPH0517312B2 JPH0517312B2 (de) | 1993-03-08 |
Family
ID=17071179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24123383A Granted JPS60131970A (ja) | 1983-12-20 | 1983-12-20 | 堆積膜形成法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60131970A (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62218572A (ja) * | 1986-03-19 | 1987-09-25 | Canon Inc | プラズマcvd法による堆積膜形成装置 |
US4846145A (en) * | 1985-10-11 | 1989-07-11 | Katsuyoshi Inouci | Infrared ray radiation sauna device with heat source of combustion heat |
JP2001253706A (ja) * | 2000-03-13 | 2001-09-18 | Jsr Corp | シリルシクロペンタシランおよびその用途 |
JP2004071970A (ja) * | 2002-08-08 | 2004-03-04 | Shin Etsu Chem Co Ltd | 太陽電池用シリコン基板の製造方法およびその製造システム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
JPS56102577A (en) * | 1980-01-18 | 1981-08-17 | Mitsubishi Electric Corp | Method and device for forming thin film |
JPS5773174A (en) * | 1980-10-24 | 1982-05-07 | Semiconductor Energy Lab Co Ltd | Manufacturing apparatus for coating film |
-
1983
- 1983-12-20 JP JP24123383A patent/JPS60131970A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
JPS56102577A (en) * | 1980-01-18 | 1981-08-17 | Mitsubishi Electric Corp | Method and device for forming thin film |
JPS5773174A (en) * | 1980-10-24 | 1982-05-07 | Semiconductor Energy Lab Co Ltd | Manufacturing apparatus for coating film |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4846145A (en) * | 1985-10-11 | 1989-07-11 | Katsuyoshi Inouci | Infrared ray radiation sauna device with heat source of combustion heat |
JPS62218572A (ja) * | 1986-03-19 | 1987-09-25 | Canon Inc | プラズマcvd法による堆積膜形成装置 |
JP2001253706A (ja) * | 2000-03-13 | 2001-09-18 | Jsr Corp | シリルシクロペンタシランおよびその用途 |
JP4518222B2 (ja) * | 2000-03-13 | 2010-08-04 | Jsr株式会社 | シリルシクロペンタシランおよびその用途 |
JP2004071970A (ja) * | 2002-08-08 | 2004-03-04 | Shin Etsu Chem Co Ltd | 太陽電池用シリコン基板の製造方法およびその製造システム |
Also Published As
Publication number | Publication date |
---|---|
JPH0517312B2 (de) | 1993-03-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |