JPS60116132A - ネガ型レジストパタ−ンの形成方法 - Google Patents

ネガ型レジストパタ−ンの形成方法

Info

Publication number
JPS60116132A
JPS60116132A JP58224644A JP22464483A JPS60116132A JP S60116132 A JPS60116132 A JP S60116132A JP 58224644 A JP58224644 A JP 58224644A JP 22464483 A JP22464483 A JP 22464483A JP S60116132 A JPS60116132 A JP S60116132A
Authority
JP
Japan
Prior art keywords
resist
pattern
layer
upper layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58224644A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0318179B2 (enrdf_load_stackoverflow
Inventor
Yasuhiro Yoneda
泰博 米田
Masashi Miyagawa
昌士 宮川
Kota Nishii
耕太 西井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58224644A priority Critical patent/JPS60116132A/ja
Publication of JPS60116132A publication Critical patent/JPS60116132A/ja
Publication of JPH0318179B2 publication Critical patent/JPH0318179B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58224644A 1983-11-29 1983-11-29 ネガ型レジストパタ−ンの形成方法 Granted JPS60116132A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58224644A JPS60116132A (ja) 1983-11-29 1983-11-29 ネガ型レジストパタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58224644A JPS60116132A (ja) 1983-11-29 1983-11-29 ネガ型レジストパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS60116132A true JPS60116132A (ja) 1985-06-22
JPH0318179B2 JPH0318179B2 (enrdf_load_stackoverflow) 1991-03-11

Family

ID=16816943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58224644A Granted JPS60116132A (ja) 1983-11-29 1983-11-29 ネガ型レジストパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS60116132A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621230A (ja) * 1985-06-27 1987-01-07 Toshiba Corp パタ−ン形成方法
US7326523B2 (en) 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159873A (en) * 1978-06-08 1979-12-18 Nec Corp Forming method of pattern on thin film
JPS5618420A (en) * 1979-07-23 1981-02-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5778529A (en) * 1980-11-05 1982-05-17 Nec Corp Resist material
JPS5789751A (en) * 1980-11-25 1982-06-04 Japan Synthetic Rubber Co Ltd Photosensitive material
JPS57189136A (en) * 1981-04-20 1982-11-20 Gte Laboratories Inc Lithographic resist of high resolution and method thereof
JPS57192947A (en) * 1981-05-25 1982-11-27 Nec Corp Resist material
JPS5834921A (ja) * 1981-08-27 1983-03-01 Nec Corp 半導体装置の製造方法
JPS5865432A (ja) * 1981-08-21 1983-04-19 ゼネラル・エレクトリツク・カンパニイ ポリメチルメタクリレ−トのエツチング法
JPS58105142A (ja) * 1981-12-17 1983-06-22 Nippon Telegr & Teleph Corp <Ntt> 遠紫外線感応性レジスト材料及びその使用方法
JPS58153932A (ja) * 1982-03-09 1983-09-13 Matsushita Electric Ind Co Ltd 写真蝕刻方法
JPS58189627A (ja) * 1982-04-30 1983-11-05 Japan Synthetic Rubber Co Ltd 感光材料
JPS58192035A (ja) * 1982-05-03 1983-11-09 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン ネガテイブ型レジストとして有用な重合体組成物の製造方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159873A (en) * 1978-06-08 1979-12-18 Nec Corp Forming method of pattern on thin film
JPS5618420A (en) * 1979-07-23 1981-02-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5778529A (en) * 1980-11-05 1982-05-17 Nec Corp Resist material
JPS5789751A (en) * 1980-11-25 1982-06-04 Japan Synthetic Rubber Co Ltd Photosensitive material
JPS57189136A (en) * 1981-04-20 1982-11-20 Gte Laboratories Inc Lithographic resist of high resolution and method thereof
JPS57192947A (en) * 1981-05-25 1982-11-27 Nec Corp Resist material
JPS5865432A (ja) * 1981-08-21 1983-04-19 ゼネラル・エレクトリツク・カンパニイ ポリメチルメタクリレ−トのエツチング法
JPS5834921A (ja) * 1981-08-27 1983-03-01 Nec Corp 半導体装置の製造方法
JPS58105142A (ja) * 1981-12-17 1983-06-22 Nippon Telegr & Teleph Corp <Ntt> 遠紫外線感応性レジスト材料及びその使用方法
JPS58153932A (ja) * 1982-03-09 1983-09-13 Matsushita Electric Ind Co Ltd 写真蝕刻方法
JPS58189627A (ja) * 1982-04-30 1983-11-05 Japan Synthetic Rubber Co Ltd 感光材料
JPS58192035A (ja) * 1982-05-03 1983-11-09 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン ネガテイブ型レジストとして有用な重合体組成物の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621230A (ja) * 1985-06-27 1987-01-07 Toshiba Corp パタ−ン形成方法
US7326523B2 (en) 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
US7439302B2 (en) 2004-12-16 2008-10-21 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists

Also Published As

Publication number Publication date
JPH0318179B2 (enrdf_load_stackoverflow) 1991-03-11

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