JPS5778529A - Resist material - Google Patents

Resist material

Info

Publication number
JPS5778529A
JPS5778529A JP15535180A JP15535180A JPS5778529A JP S5778529 A JPS5778529 A JP S5778529A JP 15535180 A JP15535180 A JP 15535180A JP 15535180 A JP15535180 A JP 15535180A JP S5778529 A JPS5778529 A JP S5778529A
Authority
JP
Japan
Prior art keywords
vinylnaphthalene
poly
group
resist
beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15535180A
Other languages
Japanese (ja)
Other versions
JPS647375B2 (en
Inventor
Yoshitake Onishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15535180A priority Critical patent/JPS5778529A/en
Priority to EP81109526A priority patent/EP0051320B1/en
Priority to DE8181109526T priority patent/DE3174780D1/en
Publication of JPS5778529A publication Critical patent/JPS5778529A/en
Priority to US06/787,695 priority patent/US4592993A/en
Publication of JPS647375B2 publication Critical patent/JPS647375B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Polymerisation Methods In General (AREA)

Abstract

PURPOSE:To improve the dry etching resistance, by introducing the vinylnaphthalene group into a resist. CONSTITUTION:A resist material is composed of a high polymer including at least one of the 1-vinylnaphthalene group, 2-vinylnaphthalene group and the chlorometh- yl compound of these naphthalene groups as a unit of composition. The sensitivity of such resist is increased by increasing the molecular weight and the chloromethyla- tion factor. The irradiation mean source uses the electron beams, X rays, gamma rays, deep ultraviolet rays of <=3,00Angstrom , ion beams, neutron beams, etc. The diagram shows the sensitivity curves to irradiation of electron beams, and figures 1, 2, 3, 4 and 5 indicate the poly-2-vinylnaphthalene of 120,000 weight mean molecular weight, poly-2-vinylnaphthalene of 190,000, the 36% chloromethyl compound of 2-vinylnaphthalene of 120,000, the copolymer of poly-2-vinylnaphthalene of 260,000, and poly-1-vinylnaphthalene of 20,000 respectively.
JP15535180A 1980-11-05 1980-11-05 Resist material Granted JPS5778529A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15535180A JPS5778529A (en) 1980-11-05 1980-11-05 Resist material
EP81109526A EP0051320B1 (en) 1980-11-05 1981-11-05 Radiation-sensitive negative resist
DE8181109526T DE3174780D1 (en) 1980-11-05 1981-11-05 Radiation-sensitive negative resist
US06/787,695 US4592993A (en) 1980-11-05 1985-10-15 Pattern forming and etching process using radiation sensitive negative resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15535180A JPS5778529A (en) 1980-11-05 1980-11-05 Resist material

Publications (2)

Publication Number Publication Date
JPS5778529A true JPS5778529A (en) 1982-05-17
JPS647375B2 JPS647375B2 (en) 1989-02-08

Family

ID=15603991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15535180A Granted JPS5778529A (en) 1980-11-05 1980-11-05 Resist material

Country Status (1)

Country Link
JP (1) JPS5778529A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209732A (en) * 1982-05-31 1983-12-06 Kureha Chem Ind Co Ltd Radiosensitive composition and resist
JPS5948759A (en) * 1982-09-13 1984-03-21 Kureha Chem Ind Co Ltd Photoresist material
JPS60116132A (en) * 1983-11-29 1985-06-22 Fujitsu Ltd Forming method of negative type resist pattern

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209732A (en) * 1982-05-31 1983-12-06 Kureha Chem Ind Co Ltd Radiosensitive composition and resist
JPH0527105B2 (en) * 1982-05-31 1993-04-20 Kureha Chemical Ind Co Ltd
JPS5948759A (en) * 1982-09-13 1984-03-21 Kureha Chem Ind Co Ltd Photoresist material
JPH0527106B2 (en) * 1982-09-13 1993-04-20 Kureha Chemical Ind Co Ltd
JPS60116132A (en) * 1983-11-29 1985-06-22 Fujitsu Ltd Forming method of negative type resist pattern
JPH0318179B2 (en) * 1983-11-29 1991-03-11 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS647375B2 (en) 1989-02-08

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