JPS5747875A - Resist composition - Google Patents

Resist composition

Info

Publication number
JPS5747875A
JPS5747875A JP12190380A JP12190380A JPS5747875A JP S5747875 A JPS5747875 A JP S5747875A JP 12190380 A JP12190380 A JP 12190380A JP 12190380 A JP12190380 A JP 12190380A JP S5747875 A JPS5747875 A JP S5747875A
Authority
JP
Japan
Prior art keywords
resist
naphthylamine
benzotriazole
tertiary
hydroxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12190380A
Other languages
Japanese (ja)
Other versions
JPS6362593B2 (en
Inventor
Hiroshi Komeno
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12190380A priority Critical patent/JPS5747875A/en
Publication of JPS5747875A publication Critical patent/JPS5747875A/en
Publication of JPS6362593B2 publication Critical patent/JPS6362593B2/ja
Granted legal-status Critical Current

Links

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  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To obtain a resist composition with superior dry etching resistance by adding an amine compound or a hosphorus compound to a resist.
CONSTITUTION: To a negative type rubber resist, a positive type phenol-novolak resin resist or a positive type polymethyl methacrylate resist is added ≥1 kind of compound selected from phenyl-β-naphthylamine, α-naphthylamine, N,N'-di-secondary-butyl-p-phenylenediamine, 2(2'-hydroxy-3',5'-di-tertiary-butylphenyl)benzotriazole, 2(2'-hydroxy-3'-tertiary-butyl-5'-methylphenyl)benzotriazole, triphenyl phosphite and 2-mercaptobenzimidazole.
COPYRIGHT: (C)1982,JPO&Japio
JP12190380A 1980-09-02 1980-09-02 Resist composition Granted JPS5747875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12190380A JPS5747875A (en) 1980-09-02 1980-09-02 Resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12190380A JPS5747875A (en) 1980-09-02 1980-09-02 Resist composition

Publications (2)

Publication Number Publication Date
JPS5747875A true JPS5747875A (en) 1982-03-18
JPS6362593B2 JPS6362593B2 (en) 1988-12-02

Family

ID=14822754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12190380A Granted JPS5747875A (en) 1980-09-02 1980-09-02 Resist composition

Country Status (1)

Country Link
JP (1) JPS5747875A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182633A (en) * 1982-04-19 1983-10-25 Tokyo Ohka Kogyo Co Ltd Positive type photosensitive composition
JPS61130947A (en) * 1984-11-30 1986-06-18 Japan Synthetic Rubber Co Ltd Positive type resist composition
JPS61219951A (en) * 1985-03-27 1986-09-30 Japan Synthetic Rubber Co Ltd Positive type radiation sensitive composition
JPS63237053A (en) * 1987-03-26 1988-10-03 Japan Synthetic Rubber Co Ltd Positive type radiation sensitive resin composition
EP0349411A2 (en) * 1988-06-28 1990-01-03 The University Of North Carolina Photoresists resistant to oxygen plasmas
US5114827A (en) * 1988-06-28 1992-05-19 Microelectronics Center Of N.C. Photoresists resistant to oxygen plasmas
US7537974B2 (en) 2005-02-03 2009-05-26 Samsung Electronics Co., Ltd. Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182633A (en) * 1982-04-19 1983-10-25 Tokyo Ohka Kogyo Co Ltd Positive type photosensitive composition
JPH0128935B2 (en) * 1982-04-19 1989-06-06 Tokyo Ohka Kogyo Co Ltd
JPS61130947A (en) * 1984-11-30 1986-06-18 Japan Synthetic Rubber Co Ltd Positive type resist composition
JPH04260B2 (en) * 1984-11-30 1992-01-06 Japan Synthetic Rubber Co Ltd
JPS61219951A (en) * 1985-03-27 1986-09-30 Japan Synthetic Rubber Co Ltd Positive type radiation sensitive composition
JPH0588466B2 (en) * 1985-03-27 1993-12-22 Japan Synthetic Rubber Co Ltd
JPS63237053A (en) * 1987-03-26 1988-10-03 Japan Synthetic Rubber Co Ltd Positive type radiation sensitive resin composition
EP0349411A2 (en) * 1988-06-28 1990-01-03 The University Of North Carolina Photoresists resistant to oxygen plasmas
US4968582A (en) * 1988-06-28 1990-11-06 Mcnc And University Of Nc At Charlotte Photoresists resistant to oxygen plasmas
US5114827A (en) * 1988-06-28 1992-05-19 Microelectronics Center Of N.C. Photoresists resistant to oxygen plasmas
US7537974B2 (en) 2005-02-03 2009-05-26 Samsung Electronics Co., Ltd. Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same

Also Published As

Publication number Publication date
JPS6362593B2 (en) 1988-12-02

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