JPS63237053A - Positive type radiation sensitive resin composition - Google Patents
Positive type radiation sensitive resin compositionInfo
- Publication number
- JPS63237053A JPS63237053A JP62072665A JP7266587A JPS63237053A JP S63237053 A JPS63237053 A JP S63237053A JP 62072665 A JP62072665 A JP 62072665A JP 7266587 A JP7266587 A JP 7266587A JP S63237053 A JPS63237053 A JP S63237053A
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- sulfonic acid
- compd
- acid ester
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims description 22
- 239000011342 resin composition Substances 0.000 title claims description 16
- 229920005989 resin Polymers 0.000 claims abstract description 29
- 239000011347 resin Substances 0.000 claims abstract description 29
- 150000003973 alkyl amines Chemical class 0.000 claims abstract description 7
- 150000003974 aralkylamines Chemical class 0.000 claims abstract description 6
- 150000004982 aromatic amines Chemical class 0.000 claims abstract description 5
- -1 nitrogen-containing compound Chemical class 0.000 claims description 44
- 239000000203 mixture Substances 0.000 abstract description 19
- 229920003986 novolac Polymers 0.000 abstract description 16
- 230000035945 sensitivity Effects 0.000 abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 abstract description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- 125000000623 heterocyclic group Chemical group 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000004321 preservation Methods 0.000 abstract 2
- 239000003513 alkali Substances 0.000 abstract 1
- 229960004418 trolamine Drugs 0.000 abstract 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 24
- 239000000243 solution Substances 0.000 description 16
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 15
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 14
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 10
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 150000001299 aldehydes Chemical class 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 150000002989 phenols Chemical class 0.000 description 6
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- 235000006408 oxalic acid Nutrition 0.000 description 5
- 229920001223 polyethylene glycol Polymers 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 4
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- 239000003377 acid catalyst Substances 0.000 description 4
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 4
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000006482 condensation reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229960003742 phenol Drugs 0.000 description 4
- 239000012429 reaction media Substances 0.000 description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- UYEMGAFJOZZIFP-UHFFFAOYSA-N 3,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC(O)=C1 UYEMGAFJOZZIFP-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 3
- QPVRKFOKCKORDP-UHFFFAOYSA-N 1,3-dimethylcyclohexa-2,4-dien-1-ol Chemical compound CC1=CC(C)(O)CC=C1 QPVRKFOKCKORDP-UHFFFAOYSA-N 0.000 description 2
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- ZTMADXFOCUXMJE-UHFFFAOYSA-N 2-methylbenzene-1,3-diol Chemical compound CC1=C(O)C=CC=C1O ZTMADXFOCUXMJE-UHFFFAOYSA-N 0.000 description 2
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- YCOXTKKNXUZSKD-UHFFFAOYSA-N 3,4-xylenol Chemical compound CC1=CC=C(O)C=C1C YCOXTKKNXUZSKD-UHFFFAOYSA-N 0.000 description 2
- HMNKTRSOROOSPP-UHFFFAOYSA-N 3-Ethylphenol Chemical compound CCC1=CC=CC(O)=C1 HMNKTRSOROOSPP-UHFFFAOYSA-N 0.000 description 2
- IAVREABSGIHHMO-UHFFFAOYSA-N 3-hydroxybenzaldehyde Chemical compound OC1=CC=CC(C=O)=C1 IAVREABSGIHHMO-UHFFFAOYSA-N 0.000 description 2
- HVCNXQOWACZAFN-UHFFFAOYSA-N 4-ethylmorpholine Chemical compound CCN1CCOCC1 HVCNXQOWACZAFN-UHFFFAOYSA-N 0.000 description 2
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 2
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- BWLUMTFWVZZZND-UHFFFAOYSA-N Dibenzylamine Chemical compound C=1C=CC=CC=1CNCC1=CC=CC=C1 BWLUMTFWVZZZND-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 2
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 description 2
- QCOGKXLOEWLIDC-UHFFFAOYSA-N N-methylbutylamine Chemical compound CCCCNC QCOGKXLOEWLIDC-UHFFFAOYSA-N 0.000 description 2
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229940022663 acetate Drugs 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- YXVFYQXJAXKLAK-UHFFFAOYSA-N biphenyl-4-ol Chemical compound C1=CC(O)=CC=C1C1=CC=CC=C1 YXVFYQXJAXKLAK-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- YWFWDNVOPHGWMX-UHFFFAOYSA-N n,n-dimethyldodecan-1-amine Chemical compound CCCCCCCCCCCCN(C)C YWFWDNVOPHGWMX-UHFFFAOYSA-N 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- DTUQWGWMVIHBKE-UHFFFAOYSA-N phenylacetaldehyde Chemical compound O=CCC1=CC=CC=C1 DTUQWGWMVIHBKE-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- SMUQFGGVLNAIOZ-UHFFFAOYSA-N quinaldine Chemical compound C1=CC=CC2=NC(C)=CC=C21 SMUQFGGVLNAIOZ-UHFFFAOYSA-N 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- YTMCUIACOKRXQA-UHFFFAOYSA-N (2-aminoacetyl) 2-aminoacetate Chemical class NCC(=O)OC(=O)CN YTMCUIACOKRXQA-UHFFFAOYSA-N 0.000 description 1
- MAOBFOXLCJIFLV-UHFFFAOYSA-N (2-aminophenyl)-phenylmethanone Chemical compound NC1=CC=CC=C1C(=O)C1=CC=CC=C1 MAOBFOXLCJIFLV-UHFFFAOYSA-N 0.000 description 1
- YMVFJGSXZNNUDW-UHFFFAOYSA-N (4-chlorophenyl)methanamine Chemical compound NCC1=CC=C(Cl)C=C1 YMVFJGSXZNNUDW-UHFFFAOYSA-N 0.000 description 1
- VJOQHNBVJDFWAU-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone naphthalene-1,2-dione Chemical compound C1(C(C=CC2=CC=CC=C12)=O)=O.OC1=C(C(=O)C2=CC=C(C=C2)O)C=CC(=C1O)O VJOQHNBVJDFWAU-UHFFFAOYSA-N 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- RCURQHDMKQNLQF-UHFFFAOYSA-N 1,2,3,4,4a,5,6,7,8,8a-decahydronaphthalen-1-amine Chemical compound C1CCCC2C(N)CCCC21 RCURQHDMKQNLQF-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- CGXJUBDTCAAXAY-UHFFFAOYSA-N 1-(3-aminophenyl)propan-1-one Chemical compound CCC(=O)C1=CC=CC(N)=C1 CGXJUBDTCAAXAY-UHFFFAOYSA-N 0.000 description 1
- VFIAOIVGTFADLM-UHFFFAOYSA-N 1-(furan-2-yl)-n,n-dimethylmethanamine Chemical compound CN(C)CC1=CC=CO1 VFIAOIVGTFADLM-UHFFFAOYSA-N 0.000 description 1
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- BPIUIOXAFBGMNB-UHFFFAOYSA-N 1-hexoxyhexane Chemical compound CCCCCCOCCCCCC BPIUIOXAFBGMNB-UHFFFAOYSA-N 0.000 description 1
- WAQPDYDRPQTELB-UHFFFAOYSA-N 1-n,4-n-bis(2,3-dimethylphenyl)benzene-1,4-diamine Chemical compound CC1=CC=CC(NC=2C=CC(NC=3C(=C(C)C=CC=3)C)=CC=2)=C1C WAQPDYDRPQTELB-UHFFFAOYSA-N 0.000 description 1
- RUFPHBVGCFYCNW-UHFFFAOYSA-N 1-naphthylamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1 RUFPHBVGCFYCNW-UHFFFAOYSA-N 0.000 description 1
- KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 description 1
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 1
- BRRSNXCXLSVPFC-UHFFFAOYSA-N 2,3,4-Trihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C(O)=C1O BRRSNXCXLSVPFC-UHFFFAOYSA-N 0.000 description 1
- KUFFULVDNCHOFZ-UHFFFAOYSA-N 2,4-xylenol Chemical compound CC1=CC=C(O)C(C)=C1 KUFFULVDNCHOFZ-UHFFFAOYSA-N 0.000 description 1
- CZNRFEXEPBITDS-UHFFFAOYSA-N 2,5-bis(2-methylbutan-2-yl)benzene-1,4-diol Chemical compound CCC(C)(C)C1=CC(O)=C(C(C)(C)CC)C=C1O CZNRFEXEPBITDS-UHFFFAOYSA-N 0.000 description 1
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
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- MWGATWIBSKHFMR-UHFFFAOYSA-N 2-anilinoethanol Chemical compound OCCNC1=CC=CC=C1 MWGATWIBSKHFMR-UHFFFAOYSA-N 0.000 description 1
- SAQAERNKMHATDZ-UHFFFAOYSA-N 2-bromo-1h-pyrrole Chemical compound BrC1=CC=CN1 SAQAERNKMHATDZ-UHFFFAOYSA-N 0.000 description 1
- FPYUJUBAXZAQNL-UHFFFAOYSA-N 2-chlorobenzaldehyde Chemical compound ClC1=CC=CC=C1C=O FPYUJUBAXZAQNL-UHFFFAOYSA-N 0.000 description 1
- RTZWBJIYBWNJMR-UHFFFAOYSA-N 2-chlorocyclohexan-1-amine Chemical compound NC1CCCCC1Cl RTZWBJIYBWNJMR-UHFFFAOYSA-N 0.000 description 1
- OKDGRDCXVWSXDC-UHFFFAOYSA-N 2-chloropyridine Chemical compound ClC1=CC=CC=N1 OKDGRDCXVWSXDC-UHFFFAOYSA-N 0.000 description 1
- HFACYWDPMNWMIW-UHFFFAOYSA-N 2-cyclohexylethanamine Chemical compound NCCC1CCCCC1 HFACYWDPMNWMIW-UHFFFAOYSA-N 0.000 description 1
- ZVUNTIMPQCQCAQ-UHFFFAOYSA-N 2-dodecanoyloxyethyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCC ZVUNTIMPQCQCAQ-UHFFFAOYSA-N 0.000 description 1
- NRGGMCIBEHEAIL-UHFFFAOYSA-N 2-ethylpyridine Chemical compound CCC1=CC=CC=N1 NRGGMCIBEHEAIL-UHFFFAOYSA-N 0.000 description 1
- JBIJLHTVPXGSAM-UHFFFAOYSA-N 2-naphthylamine Chemical compound C1=CC=CC2=CC(N)=CC=C21 JBIJLHTVPXGSAM-UHFFFAOYSA-N 0.000 description 1
- CMWKITSNTDAEDT-UHFFFAOYSA-N 2-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=CC=C1C=O CMWKITSNTDAEDT-UHFFFAOYSA-N 0.000 description 1
- NMFFUUFPJJOWHK-UHFFFAOYSA-N 2-phenoxyaniline Chemical compound NC1=CC=CC=C1OC1=CC=CC=C1 NMFFUUFPJJOWHK-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- IRTLROCMFSDSNF-UHFFFAOYSA-N 2-phenyl-1h-pyrrole Chemical compound C1=CNC(C=2C=CC=CC=2)=C1 IRTLROCMFSDSNF-UHFFFAOYSA-N 0.000 description 1
- PYSRRFNXTXNWCD-UHFFFAOYSA-N 3-(2-phenylethenyl)furan-2,5-dione Chemical compound O=C1OC(=O)C(C=CC=2C=CC=CC=2)=C1 PYSRRFNXTXNWCD-UHFFFAOYSA-N 0.000 description 1
- NJXPYZHXZZCTNI-UHFFFAOYSA-N 3-aminobenzonitrile Chemical compound NC1=CC=CC(C#N)=C1 NJXPYZHXZZCTNI-UHFFFAOYSA-N 0.000 description 1
- MQSXUKPGWMJYBT-UHFFFAOYSA-N 3-butylphenol Chemical compound CCCCC1=CC=CC(O)=C1 MQSXUKPGWMJYBT-UHFFFAOYSA-N 0.000 description 1
- SRWILAKSARHZPR-UHFFFAOYSA-N 3-chlorobenzaldehyde Chemical compound ClC1=CC=CC(C=O)=C1 SRWILAKSARHZPR-UHFFFAOYSA-N 0.000 description 1
- QZVQQUVWFIZUBQ-UHFFFAOYSA-N 3-fluoroaniline Chemical compound NC1=CC=CC(F)=C1 QZVQQUVWFIZUBQ-UHFFFAOYSA-N 0.000 description 1
- FAXDZWQIWUSWJH-UHFFFAOYSA-N 3-methoxypropan-1-amine Chemical compound COCCCN FAXDZWQIWUSWJH-UHFFFAOYSA-N 0.000 description 1
- ZETIVVHRRQLWFW-UHFFFAOYSA-N 3-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=CC(C=O)=C1 ZETIVVHRRQLWFW-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- FNFYXIMJKWENNK-UHFFFAOYSA-N 4-[(2,4-dihydroxyphenyl)methyl]benzene-1,3-diol Chemical compound OC1=CC(O)=CC=C1CC1=CC=C(O)C=C1O FNFYXIMJKWENNK-UHFFFAOYSA-N 0.000 description 1
- UNDXPKDBFOOQFC-UHFFFAOYSA-N 4-[2-nitro-4-(trifluoromethyl)phenyl]morpholine Chemical compound [O-][N+](=O)C1=CC(C(F)(F)F)=CC=C1N1CCOCC1 UNDXPKDBFOOQFC-UHFFFAOYSA-N 0.000 description 1
- WDFQBORIUYODSI-UHFFFAOYSA-N 4-bromoaniline Chemical compound NC1=CC=C(Br)C=C1 WDFQBORIUYODSI-UHFFFAOYSA-N 0.000 description 1
- ARIREUPIXAKDAY-UHFFFAOYSA-N 4-butylbenzaldehyde Chemical compound CCCCC1=CC=C(C=O)C=C1 ARIREUPIXAKDAY-UHFFFAOYSA-N 0.000 description 1
- OSDLLIBGSJNGJE-UHFFFAOYSA-N 4-chloro-3,5-dimethylphenol Chemical compound CC1=CC(O)=CC(C)=C1Cl OSDLLIBGSJNGJE-UHFFFAOYSA-N 0.000 description 1
- AVPYQKSLYISFPO-UHFFFAOYSA-N 4-chlorobenzaldehyde Chemical compound ClC1=CC=C(C=O)C=C1 AVPYQKSLYISFPO-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-M 4-hydroxybenzoate Chemical compound OC1=CC=C(C([O-])=O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-M 0.000 description 1
- QYOPPZJZMFMBDN-UHFFFAOYSA-N 4-iodo-n,n-dimethylaniline Chemical compound CN(C)C1=CC=C(I)C=C1 QYOPPZJZMFMBDN-UHFFFAOYSA-N 0.000 description 1
- CYYZDBDROVLTJU-UHFFFAOYSA-N 4-n-Butylphenol Chemical compound CCCCC1=CC=C(O)C=C1 CYYZDBDROVLTJU-UHFFFAOYSA-N 0.000 description 1
- BXRFQSNOROATLV-UHFFFAOYSA-N 4-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=C(C=O)C=C1 BXRFQSNOROATLV-UHFFFAOYSA-N 0.000 description 1
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- IEPRKVQEAMIZSS-UHFFFAOYSA-N Di-Et ester-Fumaric acid Natural products CCOC(=O)C=CC(=O)OCC IEPRKVQEAMIZSS-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-WAYWQWQTSA-N Diethyl maleate Chemical compound CCOC(=O)\C=C/C(=O)OCC IEPRKVQEAMIZSS-WAYWQWQTSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- FPVVYTCTZKCSOJ-UHFFFAOYSA-N Ethylene glycol distearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCCCCCCCC FPVVYTCTZKCSOJ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- SVYKKECYCPFKGB-UHFFFAOYSA-N N,N-dimethylcyclohexylamine Chemical compound CN(C)C1CCCCC1 SVYKKECYCPFKGB-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 241000594009 Phoxinus phoxinus Species 0.000 description 1
- NBBJYMSMWIIQGU-UHFFFAOYSA-N Propionic aldehyde Chemical compound CCC=O NBBJYMSMWIIQGU-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- 229920000147 Styrene maleic anhydride Polymers 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- YWYRVXDWCPUKER-UHFFFAOYSA-N [3-(2-methylphenyl)phenyl]methanamine Chemical compound CC1=CC=CC=C1C1=CC=CC(CN)=C1 YWYRVXDWCPUKER-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229940064734 aminobenzoate Drugs 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- LNTHITQWFMADLM-UHFFFAOYSA-N anhydrous gallic acid Natural products OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- RUOKPLVTMFHRJE-UHFFFAOYSA-N benzene-1,2,3-triamine Chemical compound NC1=CC=CC(N)=C1N RUOKPLVTMFHRJE-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- AGSPXMVUFBBBMO-UHFFFAOYSA-N beta-aminopropionitrile Chemical compound NCCC#N AGSPXMVUFBBBMO-UHFFFAOYSA-N 0.000 description 1
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical group C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 150000001983 dialkylethers Chemical class 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 229940071221 dihydroxybenzoate Drugs 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- QFTYSVGGYOXFRQ-UHFFFAOYSA-N dodecane-1,12-diamine Chemical compound NCCCCCCCCCCCCN QFTYSVGGYOXFRQ-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 229940100608 glycol distearate Drugs 0.000 description 1
- 150000001469 hydantoins Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- NCBZRJODKRCREW-UHFFFAOYSA-N m-anisidine Chemical compound COC1=CC=CC(N)=C1 NCBZRJODKRCREW-UHFFFAOYSA-N 0.000 description 1
- OVWYEQOVUDKZNU-UHFFFAOYSA-N m-tolualdehyde Chemical compound CC1=CC=CC(C=O)=C1 OVWYEQOVUDKZNU-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- GTWJETSWSUWSEJ-UHFFFAOYSA-N n-benzylaniline Chemical compound C=1C=CC=CC=1CNC1=CC=CC=C1 GTWJETSWSUWSEJ-UHFFFAOYSA-N 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- AGVKXDPPPSLISR-UHFFFAOYSA-N n-ethylcyclohexanamine Chemical compound CCNC1CCCCC1 AGVKXDPPPSLISR-UHFFFAOYSA-N 0.000 description 1
- DYFFAVRFJWYYQO-UHFFFAOYSA-N n-methyl-n-phenylaniline Chemical compound C=1C=CC=CC=1N(C)C1=CC=CC=C1 DYFFAVRFJWYYQO-UHFFFAOYSA-N 0.000 description 1
- DYUWTXWIYMHBQS-UHFFFAOYSA-N n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCNCC=C DYUWTXWIYMHBQS-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- FXLOVSHXALFLKQ-UHFFFAOYSA-N p-tolualdehyde Chemical compound CC1=CC=C(C=O)C=C1 FXLOVSHXALFLKQ-UHFFFAOYSA-N 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 229940100595 phenylacetaldehyde Drugs 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000007965 rubber solvent Substances 0.000 description 1
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N toluene Substances CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- VSRBKQFNFZQRBM-UHFFFAOYSA-N tuaminoheptane Chemical compound CCCCCC(C)N VSRBKQFNFZQRBM-UHFFFAOYSA-N 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ポジ型感放射線性樹脂組成物に関し、さらに
詳しぐはアルカリ可溶性樹脂、1.2−キノンジアジド
化合物および特定の含窒素化合物からなる、特に集積回
路作製のためのレジストとして好適なポジ型感放射線性
樹脂組成物に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a positive radiation-sensitive resin composition, more specifically, a composition comprising an alkali-soluble resin, a 1,2-quinonediazide compound, and a specific nitrogen-containing compound. In particular, the present invention relates to a positive radiation-sensitive resin composition suitable as a resist for producing integrated circuits.
従来、集積回路を作製するために使用されるレジストと
しては、環化ゴムにビスアジド化合物を配合したネガ型
レジストと、アルカリ可溶性樹脂に1.2−キノンジア
ジド化合物を配合したポジ型レジストとが知られている
。ネガ型レジストは、紫外線照射によりビスアジド化合
物が窒素を脱離してナイトレンとなり、環化ゴムを三次
元架橋するため、環化ゴムの溶剤からなる現像液に対す
る紫外線照射部分と未照射部分との熔解性に差が生じ、
これによりパターニングされるが、架橋といっても紫外
線照射部分が完全に硬化するわけではないため、現像液
中でのレジストパターンの膨潤が大きく、レジストパタ
ーンの解像度が悪いという欠点がある。Conventionally, resists used to fabricate integrated circuits include a negative resist in which a bisazide compound is blended with cyclized rubber, and a positive resist in which a 1,2-quinonediazide compound is blended in an alkali-soluble resin. ing. In a negative resist, the bisazide compound desorbs nitrogen and becomes nitrene when exposed to ultraviolet rays, and the cyclized rubber is three-dimensionally crosslinked. Therefore, the solubility of the ultraviolet irradiated areas and the non-irradiated areas in a developer consisting of a cyclized rubber solvent is There is a difference in
This results in patterning, but even though cross-linking does not mean that the UV irradiated portions are completely cured, there is a drawback that the resist pattern swells significantly in the developer and the resolution of the resist pattern is poor.
一方、ポジ型レジストは、アルカリ可溶性樹脂にアルカ
リ不溶性の1,2−キノンジアジド化合物を配合するた
め、アルカリ性水溶液からなる現像液に溶解しにり、<
、はとんど膨潤もしない。すなわちポジ型レジストでは
紫外線照射部分の1゜2−キノンジアジド化合物がイン
デンカルボン酸に変化し、アルカリ性水溶液からなる現
像液で現像されても、レジストパターンとなる紫外線未
照射部分の変化が極端に少ないため、高い解像度のレジ
ストパターンが得られる。このため集積回路の高集積度
化が要求される近年は、解像度の優れたポジ型レジスト
が多く用いられている。On the other hand, positive resists contain an alkali-insoluble 1,2-quinonediazide compound in an alkali-soluble resin, so they are difficult to dissolve in a developing solution consisting of an alkaline aqueous solution.
, does not swell at all. In other words, in a positive resist, the 1゜2-quinone diazide compound in the UV irradiated area changes to indene carboxylic acid, and even if it is developed with a developer consisting of an alkaline aqueous solution, there is extremely little change in the non-UV irradiated area that forms the resist pattern. , a resist pattern with high resolution can be obtained. For this reason, in recent years when integrated circuits are required to have a higher degree of integration, positive resists with excellent resolution are often used.
しかしながら、アルカリ可溶性樹脂と1,2−キノンジ
アジド化合物とからなるポジ型レジストを溶剤に溶解し
て長期間保存すると、アルカリ可溶性樹脂の劣化および
1.2−キノンジアジド化合物の変質が徐々に進み、感
度変化、異物の増加等を起こす問題がある。例えば、室
温では感度の変化や異物の増加が観察されない場合でも
、さらに高い温度で保存すると感度変化や異物の増加が
みられ、やがては沈澱物が生成する。このような感度変
化や異物の発生は、解像度、感度、現像性等のレジスト
性能に大きな影響を与え、集積回路作製時の歩留まり悪
化の原因となる。However, when a positive resist consisting of an alkali-soluble resin and a 1,2-quinonediazide compound is dissolved in a solvent and stored for a long period of time, the deterioration of the alkali-soluble resin and the deterioration of the 1,2-quinonediazide compound gradually progress, resulting in a change in sensitivity. , there are problems such as an increase in foreign matter. For example, even if no change in sensitivity or increase in foreign matter is observed at room temperature, a change in sensitivity or increase in foreign matter will be observed when stored at a higher temperature, and eventually a precipitate will form. Such changes in sensitivity and the generation of foreign matter have a large effect on resist performance such as resolution, sensitivity, and developability, and cause a deterioration in yield during the production of integrated circuits.
〔発明が解決しようとする問題点〕
本発明の目的は、前記従来技術の問題点を解決し、長期
間または室温よりも高い温度で保存しても、感度変化や
異物の増加がほとんどない保存安定性に優れたポジ型感
放射線性樹脂組成物を提供することにある。[Problems to be Solved by the Invention] An object of the present invention is to solve the problems of the prior art described above, and to provide storage with almost no change in sensitivity or increase in foreign substances even when stored for a long period of time or at a temperature higher than room temperature. An object of the present invention is to provide a positive radiation-sensitive resin composition with excellent stability.
本発明は、アルカリ可溶性樹脂100重量部と、1.2
−キノンジアジド化合物5〜100重量部と、アルキル
アミン、アリールアミン、アラルキルアミンおよび含窒
素複素環式化合物から選ばれる少なくとも1種類の含窒
素化合物0.001〜5重量部とを含有することを特徴
とする。The present invention includes 100 parts by weight of an alkali-soluble resin and 1.2 parts by weight of an alkali-soluble resin.
- containing 5 to 100 parts by weight of a quinonediazide compound and 0.001 to 5 parts by weight of at least one nitrogen-containing compound selected from alkylamines, arylamines, aralkylamines, and nitrogen-containing heterocyclic compounds; do.
また、本発明は、紫外線、遠紫外線、X線、電子線、・
分子線、γ線、シンクロトロン放射線、プロトンビーム
等の放射線に感応するポジ型感放射線性樹脂組成物であ
る。In addition, the present invention can be applied to ultraviolet rays, deep ultraviolet rays, X-rays, electron beams,
It is a positive radiation-sensitive resin composition that is sensitive to radiation such as molecular beams, gamma rays, synchrotron radiation, and proton beams.
なお、前記アルキルアミン、アリールアミンおよびアラ
ルキルアミンは置換基を有していてもよい。In addition, the said alkylamine, arylamine, and aralkylamine may have a substituent.
本発明に用いられる含窒素化合物であるアルキルアミン
としては、例えばブチルアミン、アミルアミン、2−ア
ミノヘプタン、セチルアミン、シクロヘキシルアミン、
2−クロロシクロヘキシルアミン、4−アミノデカリン
、β−シクロヘキシルエチルアミン、モノエタノールア
ミン、2−アミノ−1−ヘキサノール、γ−メトキシプ
ロピルアミン、β−アミノプロピオン酸メチル、β−ア
ミノプロピオニトリル、メチルブチルアミン、エチルシ
クロヘキシルアミン、ジアリルアミン、ジベンジルアミ
ン、トリエチルアミン、トリプロピルアミン、ジメチル
シクロヘキシルアミン、ジメチルフルフリルアミン、ト
リエタノールアミン、トリブチルアミン、ドデシルジメ
チルアミン、エチレンジアミン、テトラメチレンジアミ
ン、テトラメチルエチレンジアミン、ドデカメチレンジ
アミン、1,4−ジアミノシクロヘキサン、トリエチレ
ンジアミン、ジエチレントリアミン、トリエチレンテト
ラミン等;アリールアミンとしては、例えばアニリン、
N−メチルアニリン、ジメチルアニリン、トルイジン、
2−ナフチルアミン、2−7ミノビフエニル、0−クロ
ロアニリン、p−ブロモアニリン、m−フルオロアニリ
ン、N、N−ジメチル−p−ヨードアニリン、0−アミ
ンフェノール、2−アニリノエタノール、4−7ミノー
1−ナフトール、アミノナフタレン、m−アミノアニソ
ール、2−アミノジフェニルエーテル、m−アミノプロ
ピオフェノン、2−アミノベンゾフェノン、0−アミノ
安息香酸メチル、m−アミノベンゾニトリル、メチルジ
フェニルアミン、1−リフェニルアミン、N−フェニル
ベンジルアミン、0−フェニレンジアミン、m−キシリ
レンジアミン、N、N’−ビストリル−p−フェニレン
ジアミン、N、N’−ビス(ジメチルフェニル)−p−
フェニレンジアミン、トリアミノベンゼン等;アラルキ
ルアミンとしては、例えばベンジルアミン、m−トリル
ベンジルアミン、ジベンジルアミン、p−クロロベンジ
ルアミン等が挙げられる。Examples of the alkylamine which is a nitrogen-containing compound used in the present invention include butylamine, amylamine, 2-aminoheptane, cetylamine, cyclohexylamine,
2-chlorocyclohexylamine, 4-aminodecalin, β-cyclohexylethylamine, monoethanolamine, 2-amino-1-hexanol, γ-methoxypropylamine, methyl β-aminopropionate, β-aminopropionitrile, methylbutylamine , ethylcyclohexylamine, diallylamine, dibenzylamine, triethylamine, tripropylamine, dimethylcyclohexylamine, dimethylfurfurylamine, triethanolamine, tributylamine, dodecyldimethylamine, ethylenediamine, tetramethylenediamine, tetramethylethylenediamine, dodecamethylenediamine, 1,4-diaminocyclohexane, triethylenediamine, diethylenetriamine, triethylenetetramine, etc.; examples of the arylamine include aniline,
N-methylaniline, dimethylaniline, toluidine,
2-naphthylamine, 2-7 minobiphenyl, 0-chloroaniline, p-bromoaniline, m-fluoroaniline, N,N-dimethyl-p-iodoaniline, 0-aminephenol, 2-anilinoethanol, 4-7 minnow 1-naphthol, aminonaphthalene, m-aminoanisole, 2-aminodiphenyl ether, m-aminopropiophenone, 2-aminobenzophenone, methyl 0-aminobenzoate, m-aminobenzonitrile, methyldiphenylamine, 1-liphenylamine , N-phenylbenzylamine, 0-phenylenediamine, m-xylylenediamine, N,N'-bistryl-p-phenylenediamine, N,N'-bis(dimethylphenyl)-p-
phenylenediamine, triaminobenzene, etc.; examples of aralkylamines include benzylamine, m-tolylbenzylamine, dibenzylamine, p-chlorobenzylamine, etc.
さらに含窒素複素環式化合物として、例えばピロール、
インドール、2−フェニルピロール、2−ブロモピロー
ル、ピリジン、2−エチルピリジン、2−フェニルピリ
ジン、2−クロロピリジン、ピペリジン、モルフォリン
、N−エチルモルフォリン、キノリン、2−メチルキノ
リン、ピリミジン、ピラジン、ピリダジン、ピラゾール
、メラミン等が挙げられる。Furthermore, examples of nitrogen-containing heterocyclic compounds include pyrrole,
Indole, 2-phenylpyrrole, 2-bromopyrrole, pyridine, 2-ethylpyridine, 2-phenylpyridine, 2-chloropyridine, piperidine, morpholine, N-ethylmorpholine, quinoline, 2-methylquinoline, pyrimidine, pyrazine , pyridazine, pyrazole, melamine and the like.
これらのうち好ましい化合物としては、例えばトリエタ
ノールアミン、トリエチルアミン、トリブチルアミン、
エチレンジアミン、テトラメチルエチレンジアミン、ブ
チルアミン、セチルアミン、ドデシルジメチルアミン、
ジェタノールアミン等のアルキルアミン;ヘンシルアミ
ン等のアラルキルアミン;モルフォリン、N−エチルモ
ルフォリン、ピペリジン等の含窒素複素環式化合物を挙
げることができる。Among these, preferable compounds include triethanolamine, triethylamine, tributylamine,
Ethylenediamine, tetramethylethylenediamine, butylamine, cetylamine, dodecyldimethylamine,
Alkylamines such as jetanolamine; aralkylamines such as hensylamine; and nitrogen-containing heterocyclic compounds such as morpholine, N-ethylmorpholine, and piperidine.
これらの含窒素化合物は単独でまたは2種以上組み合わ
せて用いることができる。These nitrogen-containing compounds can be used alone or in combination of two or more.
前記含窒素化合物の使用量は、アルカリ可溶性樹脂10
0重量部に対し0.001〜5重量部、好ましくは0.
002〜1重量部、特に好ましくは0゜002〜0.5
重量部である。使用量が0.001重量部未満であると
感度変化や異物の増加の抑制に対してほとんど効果がな
く、また使用量が5重量部を超えると、感度、残膜率、
解像度、現像性等、のレジスト性能を悪化するので好ま
しくない。The amount of the nitrogen-containing compound used is 10% of the alkali-soluble resin.
0.001 to 5 parts by weight, preferably 0.001 to 5 parts by weight.
002 to 1 part by weight, particularly preferably 0°002 to 0.5
Parts by weight. If the amount used is less than 0.001 parts by weight, there will be little effect on suppressing changes in sensitivity or increase in foreign matter, and if the amount used exceeds 5 parts by weight, sensitivity, residual film rate,
This is not preferable because it deteriorates resist performance such as resolution and developability.
本発明に用いられるアルカリ可溶性樹脂としては、例え
ばアルカリ可溶性ノボラック樹脂(以下、単に「ノボラ
ック樹脂」という)を挙げることができる。ノボラック
樹脂は、フェノール類とアルデヒド類とを酸触媒の存在
下に縮合して得られる。Examples of the alkali-soluble resin used in the present invention include alkali-soluble novolak resin (hereinafter simply referred to as "novolak resin"). Novolac resins are obtained by condensing phenols and aldehydes in the presence of an acid catalyst.
この際用いられるフェノール類としては、例えばフェノ
ール、O−クレゾール、m−クレゾール、p−クレゾー
ル、0−エチルフェノール、m−エチルフェノール、p
−エチルフェノール、0−ブチルフェノール、m−ブチ
ルフェノール、p−ブ。The phenols used in this case include, for example, phenol, O-cresol, m-cresol, p-cresol, 0-ethylphenol, m-ethylphenol, p-cresol,
-Ethylphenol, 0-butylphenol, m-butylphenol, p-butylphenol.
チルフェノール、2.3−キシレノール、2,4−キシ
レノール、2.5−キシレノール、3,4−キシレノー
ル、3.5−キシレノール、2,3゜5−トリメチルフ
ェノール、p−フェニルフェノール、ヒドロキシノン、
カテコール、レゾルシノール、2−メチルレゾルシノー
ル、ピロガロール、α−ナフトール、ビスフェノールA
1ジヒドロキシ安息香酸エステル、没食子酸エステル等
が挙げられる。これらのフェノール類のうちフェノール
、0−クレゾール、m−クレゾール、p−クレゾール、
2,5−キシレノール、3.5−キシレノ−)’v、2
,3.5−)リンチルフェノール、レゾルシノール、2
−メチルレゾルシノールおよびビスフェノールAが好ま
しい。これらのフェノール類は、単独でまたは2種以上
組合せて用いられる。Thylphenol, 2.3-xylenol, 2,4-xylenol, 2.5-xylenol, 3,4-xylenol, 3.5-xylenol, 2,3゜5-trimethylphenol, p-phenylphenol, hydroxynon,
Catechol, resorcinol, 2-methylresorcinol, pyrogallol, α-naphthol, bisphenol A
Examples include 1-dihydroxybenzoic acid ester and gallic acid ester. Among these phenols, phenol, 0-cresol, m-cresol, p-cresol,
2,5-xylenol, 3,5-xylenol-)'v, 2
, 3.5-) lyntylphenol, resorcinol, 2
- Methylresorcinol and bisphenol A are preferred. These phenols may be used alone or in combination of two or more.
また、アルデヒド類としては、例えばホルムアルデヒド
、パラホルムアルデヒド、アセトアルデヒド、プロピル
アルデヒド、ベンズアルデヒド、フェニルアセトアルデ
ヒド、α−フェニルプロピルアルデヒド、β−フェニル
プロピルアルデヒド、O−ヒドロキシベンズアルデヒド
、m−ヒドロキシベンズアルデヒド、p−ヒドロキシベ
ンズアルデヒド、O−クロロベンズアルデヒド、m−ク
ロロベンズアルデヒド、p−クロロベンズアルデヒド、
o−ニトロベンズアルデヒド、m−ニトロベンズアルデ
ヒド、p−ニトロベンズアルデヒド、0−メチルベンズ
アルデヒド、m−メチルベンズアルデヒド、p−メチル
ベンズアルデヒド、p −エチルベンズアルデヒド、p
−n−ブチルベンズアルデヒド等が挙げられ、これらの
アルデヒド類のうちホルムアルデヒド、アセトアルデヒ
ドおよびベンズアルデヒドが好ましい。これらのアルデ
ヒド類は、単独でまたは2種以上組合せて使用すること
ができる。アルデヒド類の使用量は、フェノール類1モ
ル当たり、好ましくは0.7〜3モルである。Examples of aldehydes include formaldehyde, paraformaldehyde, acetaldehyde, propylaldehyde, benzaldehyde, phenylacetaldehyde, α-phenylpropylaldehyde, β-phenylpropylaldehyde, O-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, O-chlorobenzaldehyde, m-chlorobenzaldehyde, p-chlorobenzaldehyde,
o-nitrobenzaldehyde, m-nitrobenzaldehyde, p-nitrobenzaldehyde, 0-methylbenzaldehyde, m-methylbenzaldehyde, p-methylbenzaldehyde, p-ethylbenzaldehyde, p
-n-butylbenzaldehyde and the like, and among these aldehydes, formaldehyde, acetaldehyde and benzaldehyde are preferred. These aldehydes can be used alone or in combination of two or more. The amount of aldehydes used is preferably 0.7 to 3 moles per mole of phenols.
酸触媒としては、塩酸、硝酸、硫酸等の無機酸、または
蟻酸、シュウ酸、酢酸等の有機酸が用いられる。これら
の酸触媒の使用量は、通常、フェノール類1モル当たり
、lXl0−4〜5X10−1モルである。As the acid catalyst, inorganic acids such as hydrochloric acid, nitric acid, and sulfuric acid, or organic acids such as formic acid, oxalic acid, and acetic acid are used. The amount of these acid catalysts used is usually 1X10-4 to 5X10-1 mole per mole of phenol.
縮合反応においては、通常、反応媒質として水を用いる
が、縮合反応において使用するフェノール類がアルデヒ
ド類の水溶液に熔解せず、反応初期から不均一系になる
場合には、反応媒質として親水性溶媒を使用することも
できる。この際用いられる親水性溶媒としては、例えば
メタノール、エタノール、プロパツール、ブタノール等
のアルコール類、またはテトラヒドロフラン、ジオキサ
ン等の環状エーテル類が挙げられる。これらの反応媒質
の使用量は、通常、反応原料100重量部当たり、20
〜1000ii1部である。In condensation reactions, water is usually used as the reaction medium, but if the phenols used in the condensation reaction do not dissolve in the aqueous solution of aldehydes and the reaction becomes a heterogeneous system from the beginning, a hydrophilic solvent may be used as the reaction medium. You can also use Examples of the hydrophilic solvent used in this case include alcohols such as methanol, ethanol, propatool, and butanol, and cyclic ethers such as tetrahydrofuran and dioxane. The amount of these reaction media used is usually 20 parts by weight per 100 parts by weight of the reaction raw materials.
~1000ii 1 part.
縮合反応の反応温度は、反応原料の反応性に応じて適宜
調整することができるが、通常、10〜200℃である
。The reaction temperature of the condensation reaction can be adjusted as appropriate depending on the reactivity of the reaction raw materials, but is usually 10 to 200°C.
縮合反応終了後、系内に存在する未反応原料、酸触媒お
よび反応媒質を除去し、ノボラック樹脂を回収する。After the condensation reaction is completed, the unreacted raw materials, acid catalyst, and reaction medium present in the system are removed, and the novolac resin is recovered.
本発明に用いられるノボラック樹脂以外のアルカリ可溶
性樹脂としては、例えばポリヒドロキシスチレンまたは
その誘導体、スチレン−無水マレイン酸共重合体、ポリ
ビニルヒドロキシベンゾエート、カルボキシル基含有メ
タアクリル系樹脂等が用いられる。Examples of alkali-soluble resins other than novolak resins used in the present invention include polyhydroxystyrene or derivatives thereof, styrene-maleic anhydride copolymers, polyvinylhydroxybenzoate, carboxyl group-containing methacrylic resins, and the like.
これらのノボラック樹脂およびそれ以外のアルカリ可溶
性樹脂は単独でまたは2種以上組み合わせて使用するこ
とができる。These novolac resins and other alkali-soluble resins can be used alone or in combination of two or more.
本発明に用いられる1、2−キノンジアジド化合物とし
ては、例えば1,2−ベンゾキノンジアジド−4−スル
ホン酸エステル、1.2−ナフトキノンジアジド−4−
スルホン酸エステル、1゜2−ナフトキノンジアジド−
5−スルホン酸エステル等が挙げられる。具体的にはp
−クレゾール−1,2−ベンゾキノンジアジド−4−ス
ルホン酸エステル、レゾルシノール−1,2−ナフトキ
ノンジアジド−4−スルホン酸エステル、ピロガロール
−1,2−ナフトキノンジアジド−5−スルホン酸エス
テル等の(ポリ゛)ヒドロキシベンゼンの1.2−キノ
ンジアジドスルホン酸エステル類、2.4−ジヒドロキ
シフェニル−プロピルケトン−1,2−ベンゾキノンジ
アジド−4−スルホン酸エステル、2,4−ジヒドロキ
シフェニル−n−へキシルケトン−1,2−ナフトキノ
ンジアジド−4−スルホン酸エステル、2.4−ジヒド
ロキシベンゾフェノン−1,2−ナフトキノンジアジド
−5−スルホン酸エステル、2.3.4−トリヒドロキ
シフェニル−n−へキシルケトン−1,2−ナフトキノ
ンジアジド−4−スルホン酸エステル、2,3.4−ト
リヒドロキシベンゾフェノン−1,2−ナフトキノンジ
アジド−4−スルホン酸エステル、2.3.4−)ジヒ
ドロキシベンゾフェノン−1,2−ナフトキノンジアジ
ド−5−スルホン酸エステル、2.4.6−トリヒドロ
キシベンゾフエノンー1,2−ナフトキノンジアジド−
4−スルホン酸エステル、2.4゜6−トリヒドロキシ
ベンゾフエノンー1.2−ナフトキノンジアジド−5−
スルホン酸エステル、2.2”、4.4’−テトラヒド
ロキシベンゾフェノン−1,z−−jフトキノンジアジ
ド−5−スルホン酸エステル、2,3,4.4’−テト
ラヒドロキシベンゾフェノン−1,2−ナフトキノンジ
アジド−5−スルホン酸エステル、2.2’。Examples of the 1,2-quinonediazide compound used in the present invention include 1,2-benzoquinonediazide-4-sulfonic acid ester, 1,2-naphthoquinonediazide-4-
Sulfonic acid ester, 1゜2-naphthoquinone diazide
Examples include 5-sulfonic acid ester. Specifically, p
-Cresol-1,2-benzoquinonediazide-4-sulfonic acid ester, resorcinol-1,2-naphthoquinonediazide-4-sulfonic acid ester, pyrogallol-1,2-naphthoquinonediazide-5-sulfonic acid ester, etc. ) 1,2-quinonediazide sulfonic acid esters of hydroxybenzene, 2,4-dihydroxyphenyl-propyl ketone-1,2-benzoquinonediazide-4-sulfonic acid ester, 2,4-dihydroxyphenyl-n-hexyl ketone-1 , 2-naphthoquinonediazide-4-sulfonic acid ester, 2.4-dihydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2.3.4-trihydroxyphenyl-n-hexylketone-1,2 -Naphthoquinonediazide-4-sulfonic acid ester, 2,3.4-trihydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2.3.4-)dihydroxybenzophenone-1,2-naphthoquinonediazide- 5-sulfonic acid ester, 2.4.6-trihydroxybenzophenone-1,2-naphthoquinonediazide-
4-sulfonic acid ester, 2.4゜6-trihydroxybenzophenone-1,2-naphthoquinonediazide-5-
Sulfonic acid ester, 2.2", 4.4'-tetrahydroxybenzophenone-1,z--j phthoquinonediazide-5-sulfonic acid ester, 2,3,4.4'-tetrahydroxybenzophenone-1,2- Naphthoquinone diazide-5-sulfonic acid ester, 2.2'.
4.41−テトラヒドロキシベンゾフェノン−1゜2−
ナフトキノンジアジド−4−スルホン酸エステル、2,
3.4.4’−テトラヒドロキシベンゾフェノン−1,
2−ナフトキノンジアジド−4−スルホン酸エステル、
2,2°、3,4.6’−ペンタヒドロキシベンゾフェ
ノン−1,2−ナフトキノンジアジド−4−スルホン酸
エステル、2.2’、3,4.6’−ペンタヒドロキシ
ベンゾフェノン−1,2−ナフトキノンジアジド−5−
スルホン酸エステル、2.3.3’、4.4’。4.41-tetrahydroxybenzophenone-1゜2-
naphthoquinonediazide-4-sulfonic acid ester, 2,
3.4.4'-tetrahydroxybenzophenone-1,
2-naphthoquinonediazide-4-sulfonic acid ester,
2,2°,3,4.6'-pentahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2.2',3,4.6'-pentahydroxybenzophenone-1,2-naphtho Quinonediazide-5-
Sulfonic acid ester, 2.3.3', 4.4'.
5′−ヘキサヒドロキシベンゾフェノン−1,2−ナフ
トキノンジアジド−4−スルホン酸エステル、2.3.
3’、4.4’、5’−へキサヒドロキシベンゾフェノ
ン−1,2−ナフトキノンジアジド−5−スルホン酸エ
ステル、2.3’、4゜4’、5’、6−ヘキサヒトロ
キシベンゾフエノンー1,2−ナフトキノンジアジド−
4−スルホン酸エステル、2.3”、4.4’、5’、
6−ヘキサヒトロキシベンゾフエノンー1.2−ナフト
キノンジアジド−5−スルホン酸エステル等の(ポリ)
ヒドロキシフェニルアルキルケトンまたは(ポリ)ヒド
ロキシフェニルアリールケトンの1.2−キノンジアジ
ドスルホン酸エステル類、ビス(p−ヒドロキシフェニ
ル)メタン−1,2−ナフドキノンジアジド−4−スル
ホン酸エステル、ビス(2,4−ジヒドロキシフェニル
)メタソー1.2−ナフトキノンジアジド−5−スルホ
ン酸エステル、ビス(2,3,4−トリヒドロキシフェ
ニル)メタン−1,2−ナフトキノンジアジド−5−ス
ルホン酸エステル、2,2−ビス(p−ヒドロキシフェ
ニル)プロパン−1,2−−1−フトキノンジアジドー
4−スルホン酸エステル、2.2−ビス(2,4−ジヒ
ドロキシフェニル)プロパン−1,2−ナフトキノンジ
アジド−5−スルホン酸エステル、2.2−ビス(2,
3,4−トリヒドロキシフェニル)プロパン−1,2−
ナフトキノンジアジド−5−スルホン酸エステル等のビ
ス〔(ポリ)ヒドロキシフェニルコアルカンの1,2−
キノンジアジドスルホン酸エステル類、3,5−ジヒド
ロキシ安息香酸ラウリル−1゜2−ナフトキノンジアジ
ド−4−スルホン酸エステル、2,3.4−トリヒドロ
キシ安息香酸フェニル−1,2−ナフトキノンジアジド
−5−スルホン酸エステル、3,4.5−トリヒドロキ
シ安息香酸プロピル−1,2−ナフトキノンジアジド−
5−スルホン酸エステル、3,4.5−1−リヒドロキ
シ安息香酸フェニル−1,2−ナフトキノンジアジド−
5−スルホン酸エステル等の(ポリ)ヒドロキシ安息香
酸アルキルエステルまたは(ポリ)ヒドロキシ安息香酸
子り−ルエステルの1゜2−キノンジアジドスルホン酸
エステル類、ビス(2,5−ジヒドロキシベンゾイル)
メタン−1゜2−ナフトキノンジアジド−4−スルホン
酸エステル、ビス(2,3,4−トリヒドロキシベンゾ
イル)メタン−1,2−ナフトキノンジアジド−5−ス
ルホン酸エステル、ビス(2,4,6−トリヒドロキシ
ベンゾイル)メタン−1,2−ナフトキノンジアジド−
5−スルホン酸エステル、p−ビス(2,5−ジヒドロ
キシベンゾイル)ベンゼン−1,2−ナフトキノンジア
ジド−4−スルホン酸エステル、p−ビス(2,3,4
−)ジヒドロキシベンゾイル)ベンゼン−1,2−ナフ
トキノンジアジド−5−スルホン酸エステル、p−ビス
(2,4,6−)ジヒドロキシベンゾイル)ベンゼン−
1,2−ナフトキノンジアジド−5−スルホン酸エステ
ル等のビス〔(ポリ)ヒドロキシベンゾイルコアルカン
またはビス〔(ポリ)ヒドロキシベンゾイル〕ベンゼン
の1.2−キノンジアジドスルホン酸エステル類、エチ
レングリコールージ(3,5−ジヒドロキシベンゾエー
ト)−1,2−ナフトキノンジアジド−5−スルホン酸
エステル、ポリエチレングリコールージ(3゜4.5−
1−ジヒドロキシベンゾエート)−1,2−ナフトキノ
ンジアジド−5−スルホン酸エステル等の(ポリ)エチ
レングリコールージ〔(ポリ)ヒドロキシベンゾエート
〕の1,2−キノンジアジドスルホン酸エステル類等が
挙げられる。これらの化合物の他に、J、Kosar著
“Light−3ensitive Systems
″339〜352 (1965) 、John Wi
fey & 5ons社(New York)や
W。5'-hexahydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid ester, 2.3.
3',4.4',5'-hexahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2.3',4°4',5',6-hexahydroxybenzophenone -1,2-naphthoquinonediazide-
4-sulfonic acid ester, 2.3", 4.4', 5',
(Poly) such as 6-hexahydroxybenzophenone-1,2-naphthoquinonediazide-5-sulfonic acid ester
1,2-quinonediazide sulfonic acid esters of hydroxyphenylalkyl ketone or (poly)hydroxyphenylaryl ketone, bis(p-hydroxyphenyl)methane-1,2-nafdoquinonediazide-4-sulfonic acid ester, bis(2, 4-dihydroxyphenyl)methane 1,2-naphthoquinonediazide-5-sulfonic acid ester, bis(2,3,4-trihydroxyphenyl)methane-1,2-naphthoquinonediazide-5-sulfonic acid ester, 2,2- Bis(p-hydroxyphenyl)propane-1,2--1-phthoquinonediazide 4-sulfonic acid ester, 2,2-bis(2,4-dihydroxyphenyl)propane-1,2-naphthoquinonediazide-5-sulfone acid ester, 2,2-bis(2,
3,4-trihydroxyphenyl)propane-1,2-
1,2- of bis[(poly)hydroxyphenyl coalkanes such as naphthoquinonediazide-5-sulfonic acid ester
Quinonediazide sulfonic acid esters, 3,5-dihydroxybenzoic acid lauryl-1゜2-naphthoquinonediazide-4-sulfonic acid ester, 2,3.4-trihydroxybenzoic acid phenyl-1,2-naphthoquinonediazide-5-sulfone Acid ester, propyl 3,4.5-trihydroxybenzoate-1,2-naphthoquinone diazide
5-sulfonic acid ester, 3,4.5-1-lyhydroxybenzoic acid phenyl-1,2-naphthoquinone diazide
1゜2-quinonediazide sulfonic acid esters of (poly)hydroxybenzoic acid alkyl esters or (poly)hydroxybenzoic acid child esters such as 5-sulfonic acid esters, bis(2,5-dihydroxybenzoyl)
Methane-1゜2-naphthoquinonediazide-4-sulfonic acid ester, bis(2,3,4-trihydroxybenzoyl)methane-1,2-naphthoquinonediazide-5-sulfonic acid ester, bis(2,4,6- trihydroxybenzoyl)methane-1,2-naphthoquinonediazide-
5-sulfonic acid ester, p-bis(2,5-dihydroxybenzoyl)benzene-1,2-naphthoquinonediazide-4-sulfonic acid ester, p-bis(2,3,4
-)dihydroxybenzoyl)benzene-1,2-naphthoquinonediazide-5-sulfonic acid ester, p-bis(2,4,6-)dihydroxybenzoyl)benzene-
1,2-quinonediazide sulfonic acid esters of bis[(poly)hydroxybenzoyl coalkane or bis[(poly)hydroxybenzoyl]benzene such as 1,2-naphthoquinonediazide-5-sulfonic acid ester, ethylene glycol di(3, 5-dihydroxybenzoate)-1,2-naphthoquinonediazide-5-sulfonic acid ester, polyethylene glycol di(3°4.5-
Examples include 1,2-quinonediazide sulfonic acid esters of (poly)ethylene glycol [(poly)hydroxybenzoate] such as 1-dihydroxybenzoate)-1,2-naphthoquinonediazide-5-sulfonic acid ester. In addition to these compounds, "Light-3-enhancing Systems" by J. Kosar,
"339-352 (1965), John Wi
fey & 5ons (New York) and W.
S、DeForest著”Photoresist″5
0.(1975) 、McGraw−Hi 11、In
c、、(New York)に掲載されている1、2
−キノンジアジド化合物を用いることもできる。“Photoresist” 5 by S. DeForest
0. (1975), McGraw-Hi 11, In
1 and 2 published in c, (New York)
-Quinonediazide compounds can also be used.
これらの1.2−キノンジアジド化合物は単独でまたは
2種以上混合して使用される。These 1,2-quinonediazide compounds may be used alone or in combination of two or more.
これらの1.2−キノンジアジド化合物の配合量は、前
記アルカリ可溶性樹脂100!it部に対して、5〜1
00重量部、好ましくは10〜50重量部用いられる。The blending amount of these 1,2-quinonediazide compounds is 100! 5 to 1 for it part
00 parts by weight, preferably 10 to 50 parts by weight.
この配合量が少なすぎると、1.2−キノンジアジド化
合物が放射線を吸収して生成するカルボン酸量が少ない
ので、パターニングが困難となり、一方、多すぎると、
短時間の放射線照射では加えた1、2−キノンジアジド
化合物の全てを分解することができず、アルカリ性水溶
液からなる現像液による現像が困難となる。If this amount is too small, the amount of carboxylic acid generated by the 1,2-quinonediazide compound after absorbing radiation is small, making patterning difficult; on the other hand, if it is too large,
A short period of radiation irradiation cannot completely decompose the added 1,2-quinonediazide compound, making development with a developer consisting of an alkaline aqueous solution difficult.
本発明の組成物には、通常のポジ型感放射線性樹脂組成
物の保存安定性改良剤を併用することもできる。これら
の保存安定性改良剤としては、例えばp−フェニルフェ
ノール、4.4’−ジヒドロキシジフェニル、2.5−
ジ−t−アミルヒドロキノン、4.4’−ジヒドロキシ
ジフェニルシクロヘキサン、2.2’−メチレンビス(
4−メチル−6−t−ブチルフェノール)、2.6−ジ
ーL−ブチル−p−クレゾール、4.4′−ブチリデン
−ビス(6−t−ブチル−m−クレゾール)、2.6−
t−ブチル−4−オクタデカニルプロピオニツタフェノ
ール、2,4−ビス(n−オクチルチオ’)−6−(4
−ヒドロキシ−3,5−t−ブチルアニリド)−1,3
,5−トリアジン等のフェノール系老化防止剤、さらに
公知の含イオウ系老化防止剤が挙げられる。The composition of the present invention can also be used in combination with a storage stability improver for ordinary positive radiation-sensitive resin compositions. Examples of these storage stability improvers include p-phenylphenol, 4,4'-dihydroxydiphenyl, 2,5-
Di-t-amylhydroquinone, 4,4'-dihydroxydiphenylcyclohexane, 2,2'-methylenebis(
4-methyl-6-t-butylphenol), 2.6-di-L-butyl-p-cresol, 4.4'-butylidene-bis(6-t-butyl-m-cresol), 2.6-
t-Butyl-4-octadecanylpropionittaphenol, 2,4-bis(n-octylthio')-6-(4
-hydroxy-3,5-t-butylanilide)-1,3
, 5-triazine, and other known sulfur-containing anti-aging agents.
これらの保存安定性改良剤の使用割合は、前記アルカリ
可溶性樹脂100M量部に対して、通常、10重量部以
下、好ましくは0.01〜5重量部である。The usage ratio of these storage stability improvers is usually 10 parts by weight or less, preferably 0.01 to 5 parts by weight, based on 100 M parts of the alkali-soluble resin.
本発明の組成物には、レジストとしての感度を向上させ
るために、増感剤を配合することもできる。これらの増
感剤としては、例えば2H−ピリドC3,2−b〕−1
,4−オキサジン−3〔4H〕オン類、l0H−ピリド
(3,2−b) (1゜4〕−ベンゾチアジン類、ウ
ラゾール類、ヒダントイン類、バルビッール酸類、グリ
シン無水物類、1−ヒドロキシベンゾトリアゾール類、
アロキサン類、マレイミド類、さらに特公昭48−12
242号公報、特公昭48−35402号公報、特開昭
58−37641号公報、特開昭58−149042号
公報等に記載されている増感剤が挙げられる。これらの
増感剤の配合量は前記1,2−キノンジアジド化合物1
00重量部に対して、通常、100重量部以下、好まし
くは4〜60重量部である。A sensitizer can also be added to the composition of the present invention in order to improve the sensitivity as a resist. Examples of these sensitizers include 2H-pyridoC3,2-b]-1
, 4-oxazin-3[4H]ones, 10H-pyrido(3,2-b) (1゜4)-benzothiazines, urazoles, hydantoins, barbylic acids, glycine anhydrides, 1-hydroxybenzotriazole kind,
Alloxanes, maleimides, and also
Examples thereof include sensitizers described in Japanese Patent Publication No. 242, Japanese Patent Publication No. 48-35402, Japanese Patent Application Laid-open No. 58-37641, and Japanese Patent Application Publication No. 149042-1984. The blending amount of these sensitizers is as follows: 1,2-quinonediazide compound 1
The amount is usually 100 parts by weight or less, preferably 4 to 60 parts by weight.
本発明の組成物には、塗布性、例えばストリエーション
や乾燥塗膜形成後の放射線照射部の現像性を改良するた
めに界面活性剤を配合することもできる。界面活性剤と
しては、例えばポリオキシエチレンラウリルエーテル、
ポリオキシエチレンステアリルエーテル、ポリオキシエ
チレンオレイルエーテル等のポリオキシエチレンアルキ
ルエーテル類、ポリオキシエチレンオクチルフェノール
エーテル、ポリオキシエチレンノニルフェノールエーテ
ル等のポリオキシエチレンアルキルフェノールエーテル
類、ポリエチレングリコールジラウレート、ポリエチレ
ングリコールジステアレート等のポリエチレングリコー
ルジアルキルエーテル類のノニオン系界面活性剤、エフ
トップEF301、EF303、EF352 (新秋田
化成社製)、メガファソクF171、F173 (大
日本インキ社製)、特開昭57−178242号公報に
例示されるフン化アルキル基またはパーフルオロアルキ
ル基を有する直鎖状のフッ素系界面活性剤、フロラード
FC430、FC431(住友スリーエム社製)、アサ
ヒガードAG710、サーフロンS−382,5C10
1,5C102,5CIO3,5C104,5C105
,5C106(旭硝子社製)等のフッ素系界面活性剤、
オルガノシロキサンポリマーKP341 (、信越化学
工業社製)、アクリル酸系またはメタクリル酸系(共)
重合体ポリフローNo、 75、No、 95 (
共栄社油脂化学工業社製)等が挙げられる。これらの界
面活性剤の配合量は、組成物中のアルカリ可溶性樹脂お
よび1.2−キノンジアジド化合物の総量100重量部
当たり、通常、2重量部以下、好ましくは1重量部以下
である。The composition of the present invention may also contain a surfactant in order to improve the coating properties, for example, the striations and the developability of the radiation irradiated area after forming a dry coating film. Examples of surfactants include polyoxyethylene lauryl ether,
Polyoxyethylene alkyl ethers such as polyoxyethylene stearyl ether and polyoxyethylene oleyl ether, polyoxyethylene alkyl phenol ethers such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether, polyethylene glycol dilaurate, polyethylene glycol distearate, etc. Nonionic surfactants of polyethylene glycol dialkyl ethers, FTOP EF301, EF303, EF352 (manufactured by Shin-Akita Kasei Co., Ltd.), Mega Fasoku F171, F173 (manufactured by Dainippon Ink Co., Ltd.), as exemplified in JP-A-57-178242. Linear fluorosurfactants having a fluorinated alkyl group or perfluoroalkyl group, Florard FC430, FC431 (manufactured by Sumitomo 3M), Asahi Guard AG710, Surflon S-382, 5C10
1,5C102,5CIO3,5C104,5C105
, 5C106 (manufactured by Asahi Glass Co., Ltd.) and other fluorine-based surfactants,
Organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), acrylic acid type or methacrylic acid type (both)
Polymer Polyflow No. 75, No. 95 (
(manufactured by Kyoeisha Yushi Kagaku Kogyo Co., Ltd.), etc. The blending amount of these surfactants is usually 2 parts by weight or less, preferably 1 part by weight or less, per 100 parts by weight of the total amount of the alkali-soluble resin and 1,2-quinonediazide compound in the composition.
また、本発明の組成物には、放射線照射部の潜像を可視
化させたり、放射線照射時のハレーションの影響を少な
くするために着色剤を、また接着性を改良するために接
着助剤を、さらに必要に応じて消泡剤等を配合すること
もできる。The composition of the present invention also contains a coloring agent to visualize the latent image of the radiation irradiated area and to reduce the effect of halation during radiation irradiation, and an adhesion aid to improve adhesiveness. Furthermore, an antifoaming agent or the like can be added as necessary.
本発明の組成物を基板に塗布するに際しては、前記アル
カリ可溶性樹脂、前記1.2−キノンジアジド化合物、
前記含窒素化合物および各種配合剤を、例えば濃度が5
〜50重量%となるように適当な溶剤に所定量ずつ溶解
し、例えば孔径0.2μm程度のフィルターで濾過する
ことにより組成物溶液を調製し、回転塗布、流し塗布、
ロール塗布等によりシリコンウェーハ等に塗布する。こ
の際に用いられる溶剤としては、例えばエチレングリコ
ールモノメチルエーテル、エチレングリコールモノエチ
ルエーテル等のグリコールエーテル類、メチルセロソル
ブアセテート、エチルセロソルブアセテート等のセロソ
ルブエステル類、2−オキシプロピオン酸メチル、2−
オキシプロピオン酸エチル等のモノオキシモノカルボン
酸エステル類、1〜ルエン、キシレン等の芳香族炭化水
素類、メチルエチルケトン、シクロヘキサノン等のケト
ン類、または酢酸エチル、酢酸ブチル等のエステル類が
挙げられる。これらの溶剤は単独でまたは2種以上組み
合わせて用いられる。また必要に応じベンジルエチルエ
ーテル、ジヘキシルエーテル、ジエチレングリコール七
ツメチルエーテル、ジエチレングリコール七ノエチルエ
ーテル、アセトニルアセトン、イソホロン、カプロン酸
、カプリル酸、1−オクタツール、1−ノナノール、ベ
ンジルアルコール、酢酸ベンジル、安息香酸エチル、シ
ュウ酸ジエチル、マレイン酸ジエチル、T−ブチロラク
トン、炭酸エチレン、炭酸プロピレン、フェニルセロソ
ルブアセテート等の高沸点溶剤を添加することもできる
。When applying the composition of the present invention to a substrate, the alkali-soluble resin, the 1,2-quinonediazide compound,
The nitrogen-containing compound and various compounding agents may be added at a concentration of, for example, 5.
A composition solution is prepared by dissolving a predetermined amount in an appropriate solvent so that the concentration is ~50% by weight, and filtering it through a filter with a pore size of about 0.2 μm, for example, and spin coating, flow coating,
Coat onto a silicon wafer, etc. by roll coating or the like. Examples of the solvent used in this case include glycol ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether, cellosolve esters such as methyl cellosolve acetate and ethyl cellosolve acetate, methyl 2-oxypropionate, 2-
Examples include monooxymonocarboxylic acid esters such as ethyl oxypropionate, aromatic hydrocarbons such as 1-toluene and xylene, ketones such as methyl ethyl ketone and cyclohexanone, and esters such as ethyl acetate and butyl acetate. These solvents may be used alone or in combination of two or more. Also, as necessary, benzyl ethyl ether, dihexyl ether, diethylene glycol 7-methyl ether, diethylene glycol 7-methyl ether, acetonyl acetone, isophorone, caproic acid, caprylic acid, 1-octatool, 1-nonanol, benzyl alcohol, benzyl acetate, benzoic acid. High boiling point solvents such as ethyl acid, diethyl oxalate, diethyl maleate, T-butyrolactone, ethylene carbonate, propylene carbonate, and phenyl cellosolve acetate can also be added.
本発明の組成物の現像液としては、例えば水酸化ナトリ
ウム、水酸化カリウム、炭酸ナトリウム、珪酸ナトリウ
ム、メタ珪酸ナトリウム、アンモニア水等の無機アルカ
リ類、工”チルアミン、n−プロピルアミン等の第1級
アミン類、ジエチルアミン、ジ−n−プロピルアミン等
の第2級アミン類、トリエチルアミン、メチルジエチル
アミン等の第3級アミン類、ジメチルエタノールアミン
、トリエタノールアミン等のアルコールアミン類、テト
ラメチルアンモニウムヒドロキシド、テトラエチルアン
モニウムヒドロキシド、コリン等の第4級アンモニウム
塩、またはピロール、ピペリジン、1.8−ジアザビシ
クロ(5,4,0)−7−ウンデセン、1.5−ジアザ
ビシクロ(4,3,0)−5−ノナン等の環状アミン類
を熔解してなるアルカリ性水溶液が使用される。Examples of the developer for the composition of the present invention include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia; secondary amines such as diethylamine and di-n-propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tetramethylammonium hydroxide , tetraethylammonium hydroxide, quaternary ammonium salts such as choline, or pyrrole, piperidine, 1,8-diazabicyclo(5,4,0)-7-undecene, 1,5-diazabicyclo(4,3,0)- An alkaline aqueous solution prepared by dissolving a cyclic amine such as 5-nonane is used.
また前記現像液には水溶性有機溶媒、例えばメタノール
、エタノール等のアルコール類や界面活性剤を適量添加
して使用することもできる。Further, a water-soluble organic solvent, such as alcohols such as methanol and ethanol, or a surfactant may be added to the developer in an appropriate amount.
以下、本発明を実施例により具体的に説明するが、本発
明はこれらの実施例によって何ら制約されるものではな
い。EXAMPLES Hereinafter, the present invention will be explained in detail with reference to Examples, but the present invention is not limited to these Examples in any way.
(A)ノボラック樹脂Aの合成
フラスコに、m−クレゾール324g(3モル)、3.
5−ジメチルフェノール244g(2モル)、37重量
%ホルムアルデヒド水溶液770gおよびシュウ酸0.
8gを仕込んだ後、該フラスコを油浴に浸し、内温を1
00℃に保持しながら1時間反応させ、その後さらにm
−クレゾール324g(3モル)および3,5−ジメチ
ルフェノール244g(2モル)を反応の進行とともに
連続的にフラスコに仕込み、2時間反応させた。次いで
油浴温度を180℃まで上昇させ、同時にフラスコ内を
減圧にして水、未反応のホルムアルデヒド、m−クレゾ
ールおよび3,5−ジメチルフェノール、シュウ酸等を
除去し、ノボランク樹脂を回収した(以下、この樹脂を
「ノボラック樹脂A」と称する)。(A) In a synthetic flask of novolac resin A, 324 g (3 mol) of m-cresol was added, 3.
244 g (2 mol) of 5-dimethylphenol, 770 g of a 37% by weight formaldehyde aqueous solution, and 0.5 g of oxalic acid.
After charging 8g, immerse the flask in an oil bath and lower the internal temperature to 1.
React for 1 hour while maintaining at 00°C, then further m
As the reaction progressed, 324 g (3 moles) of -cresol and 244 g (2 moles) of 3,5-dimethylphenol were continuously charged into the flask and allowed to react for 2 hours. Next, the oil bath temperature was raised to 180°C, and at the same time the pressure inside the flask was reduced to remove water, unreacted formaldehyde, m-cresol, 3,5-dimethylphenol, oxalic acid, etc., and recover Novolanc resin (hereinafter referred to as , this resin is referred to as "novolak resin A").
(B)ノボラック樹脂Bの合成
フラスコに、m−クレゾール162g(1,5モル)、
p−クレゾール468g(6モル)、37重量%ホルム
アルデヒド水溶液770gおよびシュウ酸0.45 g
を仕込み、フラスコを油浴に浸し、内温を100℃に保
持しながら1時間反応させ、その後さらにm−クレゾー
ル270g(2,5モル)を反応の進行とともに連続的
にフラスコに仕込み42時間反応させた。次いで油浴温
度を180℃まで上昇させ、同時にフラスコ内を減圧に
して、水、未反応のホルムアルデヒド、m−クレゾール
およびp−クレゾール、シュウ酸等を除去し、ノボラッ
ク樹脂を回収したくこの樹脂を「ノボラック樹脂B」と
称する)。(B) In a synthetic flask of novolac resin B, 162 g (1.5 mol) of m-cresol,
468 g (6 mol) of p-cresol, 770 g of 37% by weight formaldehyde aqueous solution and 0.45 g of oxalic acid
was charged, the flask was immersed in an oil bath, and reacted for 1 hour while maintaining the internal temperature at 100°C. After that, 270 g (2.5 mol) of m-cresol was continuously added to the flask as the reaction progressed, and the reaction took place for 42 hours. I let it happen. Next, the oil bath temperature was raised to 180°C, and at the same time the pressure inside the flask was reduced to remove water, unreacted formaldehyde, m-cresol and p-cresol, oxalic acid, etc., and recover the novolac resin. (referred to as "Novolac Resin B").
実施例1
フラスコにノボラック樹脂A100重量部、2゜3.4
.4’−テトラヒドロキシベンゾフェノン(T E H
B )に1.2−ナフトキノンジアジド−5−スルホニ
ルクロリド(NQD)を平均2.5モル縮合させた化合
物29重量部、トリエチルアミン0.005 [1部ヲ
エチルセロソルブアセテート320重量部とともに仕込
み、攪拌して溶解させた。次いで孔径0.2μmのメン
ブランフィルタ−で濾過してポジ型感放射線性樹脂組成
物溶液を鋼製した。Example 1 100 parts by weight of novolak resin A in a flask, 2°3.4
.. 4'-tetrahydroxybenzophenone (TEH
29 parts by weight of a compound prepared by condensing 1.2-naphthoquinonediazide-5-sulfonyl chloride (NQD) with an average of 2.5 moles in B), 0.005 [1 part of triethylamine] and 320 parts by weight of ethyl cellosolve acetate were added, and the mixture was stirred. and dissolved. The solution was then filtered through a membrane filter with a pore size of 0.2 μm to obtain a positive radiation-sensitive resin composition solution.
この調製直後の組成物溶液について、該溶液中の粒径0
.5μm以上の微粒子数およびポジ型レジストとして使
用した場合の感度を測定した。Regarding the composition solution immediately after preparation, the particle size in the solution is 0.
.. The number of fine particles of 5 μm or more and the sensitivity when used as a positive resist were measured.
また、この組成物溶液を30℃で2力月間保存した後、
該溶液中の粒径0.5μm以上の微粒子数およびポジ型
レジストとして使用した場合の感度を測定し、さらに感
度についてはその変化率を求めた。Moreover, after storing this composition solution at 30°C for 2 months,
The number of fine particles with a particle size of 0.5 μm or more in the solution and the sensitivity when used as a positive resist were measured, and the rate of change in sensitivity was determined.
なお、上記の微粒子数は、HI AC/ROYCO社製
自動微粒子計測器を使用して測定した。The number of particles mentioned above was measured using an automatic particle counter manufactured by HI AC/ROYCO.
また、感度は、シリコンウェーハ上にスピンナーで組成
物溶液を塗布した後、ホントプレート上にて90℃で2
分間ブレベークして1.2μm厚のレジスト層を形成さ
せ、次いでステッパーで露光したのち、テトラメチルア
ンモニウムヒドロキシド2.4重量%水溶液を現像液と
して、60秒間現像し、水でリンスし乾燥したのち、得
られたレジストパターンを走査型電子顕微鏡で観察し、
2μmパターンのラインとスペースが1対1になる露光
量を求めることにより測定した。In addition, the sensitivity was determined by applying the composition solution onto a silicon wafer using a spinner, and then using a real plate at 90°C for 2 hours.
A resist layer with a thickness of 1.2 μm was formed by bre-baking for 1 minute, then exposed using a stepper, developed for 60 seconds using a 2.4% by weight aqueous solution of tetramethylammonium hydroxide as a developer, rinsed with water, dried, and then exposed to light using a stepper. , the obtained resist pattern was observed with a scanning electron microscope,
The measurement was carried out by determining the exposure amount at which the lines and spaces of the 2 μm pattern were 1:1.
比較例1
実施例1において、トリエチルアミンo、 o o s
重量部を添加しない以外は実施例1と同様にポジ型感放
射線性樹脂組成物溶液を調製し、実施例1と同様の操作
で測定を行なった。その結果を第1表に示した。Comparative Example 1 In Example 1, triethylamine o, o o s
A positive radiation-sensitive resin composition solution was prepared in the same manner as in Example 1, except that no part by weight was added, and measurements were performed in the same manner as in Example 1. The results are shown in Table 1.
実施例2
実施例1において、ノボラック樹脂への代わりにノボラ
ック樹脂Bを用いた以外は実施例1と同様にしてポジ型
感放射線性樹脂組成物溶液を調製し、実施例1と同様の
操作で測定を行なった。その結果を第1表に示した。Example 2 A positive radiation-sensitive resin composition solution was prepared in the same manner as in Example 1 except that novolac resin B was used instead of novolac resin in Example 1, and the solution was prepared in the same manner as in Example 1. Measurements were made. The results are shown in Table 1.
比較例2
実施例2において、トリエチルアミン0.005重量部
を添加しない以外は実施例2と同様にポジ型感放射線性
樹脂組成物溶液を調製し、実施例1と同様の操作で測定
を行なった。その結果を第1表に示した。Comparative Example 2 A positive radiation-sensitive resin composition solution was prepared in the same manner as in Example 2, except that 0.005 parts by weight of triethylamine was not added, and measurements were performed in the same manner as in Example 1. . The results are shown in Table 1.
実施例3〜10
実施例1および2において、トリエチルアミンを第1表
に示す含窒素化合物に代え、その使用量を第1表に示す
量に代えた以外は実施例1および2と同様にポジ型感放
射線性樹脂組成物溶液を開製し、実施例1および2と同
様の操作で測定を行なった。その結果を第1表に示した
。Examples 3 to 10 In Examples 1 and 2, positive type was used in the same manner as in Examples 1 and 2, except that triethylamine was replaced with the nitrogen-containing compound shown in Table 1, and the amount used was changed to the amount shown in Table 1. A radiation-sensitive resin composition solution was prepared and measured in the same manner as in Examples 1 and 2. The results are shown in Table 1.
実施例11〜15
実施例2において、1.2−キノンジアジド化合物を第
1表に示す1,2−キノンジアジド化合物Cb:2’、
3.4−)リヒドロキシベンゾフェノン(THB)1モ
ルと1,2°−ナフトキノンジアジド−5−スルホニル
クロリド(NQD)2.2モルとの縮合物、c:THB
1モルとNQD3モルとの縮合物、d : TEHB
1モルとNQD2.6モルとの縮合物〕に代え、その使
用量を第1表に示す量に代え、さらに含窒素化合物をト
リプロピルアミンに代えた以外は実施例2と同様にして
ポジ型感放射線性樹脂組成物溶液を調製し、実施例2と
同様の操作で測定を行なった。その結果を第1表に示し
た。Examples 11 to 15 In Example 2, the 1,2-quinonediazide compound Cb:2' shown in Table 1 was used as the 1,2-quinonediazide compound.
3.4-) Condensate of 1 mol of lyhydroxybenzophenone (THB) and 2.2 mol of 1,2°-naphthoquinonediazide-5-sulfonyl chloride (NQD), c: THB
Condensate of 1 mol and 3 mol of NQD, d: TEHB
A positive type was prepared in the same manner as in Example 2, except that the amount used was changed to the amount shown in Table 1, and the nitrogen-containing compound was replaced with tripropylamine. A radiation-sensitive resin composition solution was prepared, and measurements were performed in the same manner as in Example 2. The results are shown in Table 1.
比較例3
実施例1において、トリエチルアミン0.0 O5重量
部の代わりに2,6−ジーt−ブチル−p−クレゾール
o、 o o s重量部を用いた以外は実施例1と同様
にしてポジ型感放射線性樹脂組成物溶液を調製し、実施
例1と同様の操作で測定を行なった。その結果を第1表
に示した。Comparative Example 3 A positive test was carried out in the same manner as in Example 1 except that 2,6-di-t-butyl-p-cresol o, o o s parts by weight was used instead of 0.0 parts by weight of triethylamine. A radiation-sensitive resin composition solution was prepared, and measurements were carried out in the same manner as in Example 1. The results are shown in Table 1.
以下余白
(発明の効果〕
本発明によれば、アルカリ可溶性樹脂と1.2−キノン
ジアジド化合物とを含むポジ型感放射線性樹脂組成物に
、特定の窒素化合物を添加することにより、感度変化や
異物の増加がほとんどない優れた保存安定性を有する組
成物を得ることができる。Margin below (Effects of the Invention) According to the present invention, by adding a specific nitrogen compound to a positive radiation-sensitive resin composition containing an alkali-soluble resin and a 1,2-quinonediazide compound, changes in sensitivity and foreign substances can be prevented. It is possible to obtain a composition having excellent storage stability with almost no increase in .
代理人 弁理士 川 北 武 長
手続補正書
特許庁長官 黒 1)明 雄 殿
1、事件の表示
゛ 昭和62年特許願第72665 号2、発明の
名称 ポジ型感放射線性樹脂組成物3、補正をする者
事件との関係 特許出願人
住 所 東京都中央区築地二丁目11番24号名 称
(417)日本合成ゴム株式会社代表者 吉 光
久
4、代理人〒103
住 所 東京都中央区日本橋茅場町−丁目11番8号。Agent Patent Attorney Takeshi Kawakita Long Procedural Amendment Commissioner of the Patent Office Black 1) Mr. Akio 1. Indication of the Case 1988 Patent Application No. 72665 2. Title of Invention Positive Radiation Sensitive Resin Composition 3. Amendment Relationship with the case of a person who does
(417) Yoshimitsu, Representative of Japan Synthetic Rubber Co., Ltd.
Ku4, Agent 103 Address: 11-8, Kayabacho, Nihonbashi, Chuo-ku, Tokyo.
5、補正命令の日付 自発
6、補正の対象 明細書の発明の詳細な説明の欄7、補
正の内容
(1)明細書第7頁第2行目の「ピラジン、」の後に「
ピペラジン、」を加える。5. Date of amendment order Voluntary 6. Subject of amendment Column 7, Detailed explanation of the invention in the specification, Contents of amendment (1) After "pyrazine," in the second line of page 7 of the specification.
Add piperazine.
(2)明細書第7頁第8行目の「ジェタノールアミン」
の後に「、トリプロピルアミン、モノエタノールアミン
」を加える。(2) “Jetanolamine” on page 7, line 8 of the specification
After that add ", tripropylamine, monoethanolamine".
(3)明細書第11頁第12行目の「カリ可溶性樹脂と
しては、例えば」の後に「1.2−キノンジアジド化ノ
ボラック樹脂、」を加える。(3) On page 11, line 12 of the specification, add "1,2-quinonediazide novolac resin" after "for example, as a potash-soluble resin."
(4)明細書第22頁下から2行目の「アセテート等の
セロソルブエステル類、」の後に「プロピレングリコー
ルモノメチルエーテルアセテート、プロピレングリコー
ルモノエチルエーテルアセテート等のグリコールエーテ
ルエステル類、」を加える。(4) Add "glycol ether esters such as propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether acetate" after "cellosolve esters such as acetate" on the second line from the bottom of page 22 of the specification.
(5)明細書第26頁下から6行目の「化合物29重量
部」を「化合物a29重量部jに改める。(5) "29 parts by weight of compound" on the 6th line from the bottom of page 26 of the specification has been changed to "29 parts by weight of compound a j.
(6)明細書第27頁第9行目のrHrAc/ROYC
」を’HIACROYCJに改める。(6) rHrAc/ROYC on page 27, line 9 of the specification
' was changed to 'HIACROYCJ.
(7)明細書第29頁第9行目および第10行目の「2
′」をそれぞれ’2Jに改める。(7) "2" on page 29, line 9 and line 10 of the specification
'' are respectively changed to '2J.
(8)明細書第29頁第12行目の「2.2モル」、同
第133行目「3モル」、同第144行目「2.6モル
」をそれぞれr平均2.2モル」、「平均3モル」、「
平均2.6モル」と改める。(8) ``2.2 mol'' on page 29, line 12 of the specification, ``3 mol'' on line 133, and ``2.6 mol'' on line 144 of the specification, each with an average of 2.2 mol.'' , "Average 3 moles", "
2.6 moles on average.
(9)明細書第31頁の第1表の実施例6の「ジメチル
アニリン」を「ベンジルアミン」に改める。(9) "Dimethylaniline" in Example 6 in Table 1 on page 31 of the specification is changed to "benzylamine."
(10)明細書第31頁の第1表の実施例9の「632
」を’320Jに改める。(10) "632" in Example 9 of Table 1 on page 31 of the specification
" is changed to '320J.
以上that's all
Claims (1)
ノンジアジド化合物5〜100重量部と、アルキルアミ
ン、アリールアミン、アラルキルアミンおよび含窒素複
素環式化合物から選ばれる少なくとも1種類の含窒素化
合物0.001〜5重量部とを含有することを特徴とす
るポジ型感放射線性樹脂組成物。(1) 100 parts by weight of an alkali-soluble resin, 5 to 100 parts by weight of a 1,2-quinonediazide compound, and at least one nitrogen-containing compound selected from alkylamines, arylamines, aralkylamines, and nitrogen-containing heterocyclic compounds. .001 to 5 parts by weight of a positive radiation-sensitive resin composition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62072665A JP2555589B2 (en) | 1987-03-26 | 1987-03-26 | Positive type radiation sensitive resin composition for integrated circuit production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62072665A JP2555589B2 (en) | 1987-03-26 | 1987-03-26 | Positive type radiation sensitive resin composition for integrated circuit production |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63237053A true JPS63237053A (en) | 1988-10-03 |
JP2555589B2 JP2555589B2 (en) | 1996-11-20 |
Family
ID=13495885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62072665A Expired - Lifetime JP2555589B2 (en) | 1987-03-26 | 1987-03-26 | Positive type radiation sensitive resin composition for integrated circuit production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2555589B2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03185448A (en) * | 1989-12-15 | 1991-08-13 | Japan Synthetic Rubber Co Ltd | Radiation sensitive resin composition |
JPH05127369A (en) * | 1991-10-31 | 1993-05-25 | Nec Corp | Resist material |
JPH05249662A (en) * | 1991-10-17 | 1993-09-28 | Shipley Co Inc | Radiation-sensitive composition, and its production |
US5716753A (en) * | 1995-07-03 | 1998-02-10 | Fuji Photo Film Co., Ltd. | Positive-working quinone diazide resist composition containing organic phosphoric compound and an amine and process for the formation of fine pattern using same |
US6218069B1 (en) | 1999-01-11 | 2001-04-17 | Shin-Etsu Chemical Co. Ltd. | Photosensitive resin composition and making process |
JP2002040644A (en) * | 2000-07-27 | 2002-02-06 | Jsr Corp | Radiation-sensitive resin composition and insulating film of organic el element |
JP2002169277A (en) * | 2000-12-05 | 2002-06-14 | Jsr Corp | Radiation sensitive resin composition for formation of insulating film of organic el display device, insulating film formed from the composition and organic el display device |
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JPS57212436A (en) * | 1981-06-15 | 1982-12-27 | Polychrome Corp | Composition of forming highly visible image before development following exposure to radiation |
JPS60158440A (en) * | 1984-01-26 | 1985-08-19 | Mitsubishi Chem Ind Ltd | Positive type photoresist composition |
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1987
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JPS50108002A (en) * | 1974-02-01 | 1975-08-26 | ||
JPS5747875A (en) * | 1980-09-02 | 1982-03-18 | Matsushita Electric Ind Co Ltd | Resist composition |
JPS57212436A (en) * | 1981-06-15 | 1982-12-27 | Polychrome Corp | Composition of forming highly visible image before development following exposure to radiation |
JPS60158440A (en) * | 1984-01-26 | 1985-08-19 | Mitsubishi Chem Ind Ltd | Positive type photoresist composition |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03185448A (en) * | 1989-12-15 | 1991-08-13 | Japan Synthetic Rubber Co Ltd | Radiation sensitive resin composition |
JPH05249662A (en) * | 1991-10-17 | 1993-09-28 | Shipley Co Inc | Radiation-sensitive composition, and its production |
JPH05127369A (en) * | 1991-10-31 | 1993-05-25 | Nec Corp | Resist material |
US5716753A (en) * | 1995-07-03 | 1998-02-10 | Fuji Photo Film Co., Ltd. | Positive-working quinone diazide resist composition containing organic phosphoric compound and an amine and process for the formation of fine pattern using same |
US6218069B1 (en) | 1999-01-11 | 2001-04-17 | Shin-Etsu Chemical Co. Ltd. | Photosensitive resin composition and making process |
JP2002040644A (en) * | 2000-07-27 | 2002-02-06 | Jsr Corp | Radiation-sensitive resin composition and insulating film of organic el element |
JP2002169277A (en) * | 2000-12-05 | 2002-06-14 | Jsr Corp | Radiation sensitive resin composition for formation of insulating film of organic el display device, insulating film formed from the composition and organic el display device |
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JP2555589B2 (en) | 1996-11-20 |
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