JPS57192947A - Resist material - Google Patents
Resist materialInfo
- Publication number
- JPS57192947A JPS57192947A JP56078967A JP7896781A JPS57192947A JP S57192947 A JPS57192947 A JP S57192947A JP 56078967 A JP56078967 A JP 56078967A JP 7896781 A JP7896781 A JP 7896781A JP S57192947 A JPS57192947 A JP S57192947A
- Authority
- JP
- Japan
- Prior art keywords
- resist material
- chloromethylstyrene
- vinylnaphthalene
- copolymer
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
PURPOSE:To obtain a resist material good in dry-etching resistance and easy to prepare, by using a copolymer of vinylnaphthalene and chloromethylstyrene as a material sensitive to radiation and corpuscular beams. CONSTITUTION:A copolymer of vinylnaphthalene V and chloromethylstyrene C is used as a material sensitive to radiation and corpuscular beams. A suitable copolymerization ratio of V/C by weight is (95-50):(5-50), and a suitable average mol.wt. is 10,000-1,000,000.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56078967A JPS57192947A (en) | 1981-05-25 | 1981-05-25 | Resist material |
EP81109526A EP0051320B1 (en) | 1980-11-05 | 1981-11-05 | Radiation-sensitive negative resist |
DE8181109526T DE3174780D1 (en) | 1980-11-05 | 1981-11-05 | Radiation-sensitive negative resist |
US06/787,695 US4592993A (en) | 1980-11-05 | 1985-10-15 | Pattern forming and etching process using radiation sensitive negative resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56078967A JPS57192947A (en) | 1981-05-25 | 1981-05-25 | Resist material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57192947A true JPS57192947A (en) | 1982-11-27 |
JPH033214B2 JPH033214B2 (en) | 1991-01-18 |
Family
ID=13676668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56078967A Granted JPS57192947A (en) | 1980-11-05 | 1981-05-25 | Resist material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57192947A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60116132A (en) * | 1983-11-29 | 1985-06-22 | Fujitsu Ltd | Forming method of negative type resist pattern |
-
1981
- 1981-05-25 JP JP56078967A patent/JPS57192947A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60116132A (en) * | 1983-11-29 | 1985-06-22 | Fujitsu Ltd | Forming method of negative type resist pattern |
JPH0318179B2 (en) * | 1983-11-29 | 1991-03-11 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPH033214B2 (en) | 1991-01-18 |
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