JPH0318179B2 - - Google Patents

Info

Publication number
JPH0318179B2
JPH0318179B2 JP58224644A JP22464483A JPH0318179B2 JP H0318179 B2 JPH0318179 B2 JP H0318179B2 JP 58224644 A JP58224644 A JP 58224644A JP 22464483 A JP22464483 A JP 22464483A JP H0318179 B2 JPH0318179 B2 JP H0318179B2
Authority
JP
Japan
Prior art keywords
resist
layer
pattern
upper layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58224644A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60116132A (ja
Inventor
Yasuhiro Yoneda
Masashi Myagawa
Kota Nishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58224644A priority Critical patent/JPS60116132A/ja
Publication of JPS60116132A publication Critical patent/JPS60116132A/ja
Publication of JPH0318179B2 publication Critical patent/JPH0318179B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58224644A 1983-11-29 1983-11-29 ネガ型レジストパタ−ンの形成方法 Granted JPS60116132A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58224644A JPS60116132A (ja) 1983-11-29 1983-11-29 ネガ型レジストパタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58224644A JPS60116132A (ja) 1983-11-29 1983-11-29 ネガ型レジストパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS60116132A JPS60116132A (ja) 1985-06-22
JPH0318179B2 true JPH0318179B2 (enrdf_load_stackoverflow) 1991-03-11

Family

ID=16816943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58224644A Granted JPS60116132A (ja) 1983-11-29 1983-11-29 ネガ型レジストパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS60116132A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621230A (ja) * 1985-06-27 1987-01-07 Toshiba Corp パタ−ン形成方法
US7326523B2 (en) 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159873A (en) * 1978-06-08 1979-12-18 Nec Corp Forming method of pattern on thin film
JPS5618420A (en) * 1979-07-23 1981-02-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5778529A (en) * 1980-11-05 1982-05-17 Nec Corp Resist material
JPS57192947A (en) * 1981-05-25 1982-11-27 Nec Corp Resist material
JPS5789751A (en) * 1980-11-25 1982-06-04 Japan Synthetic Rubber Co Ltd Photosensitive material
CA1220375A (en) * 1981-04-20 1987-04-14 William Jensen High resolution lithographic resist and method
US4360585A (en) * 1981-08-21 1982-11-23 General Electric Company Method of etching polymethyl methacrylate
JPS5834921A (ja) * 1981-08-27 1983-03-01 Nec Corp 半導体装置の製造方法
JPS58105142A (ja) * 1981-12-17 1983-06-22 Nippon Telegr & Teleph Corp <Ntt> 遠紫外線感応性レジスト材料及びその使用方法
JPS58153932A (ja) * 1982-03-09 1983-09-13 Matsushita Electric Ind Co Ltd 写真蝕刻方法
JPS58189627A (ja) * 1982-04-30 1983-11-05 Japan Synthetic Rubber Co Ltd 感光材料
DE3271595D1 (de) * 1982-05-03 1986-07-10 Ibm Poly(halostyrene) for negative resists

Also Published As

Publication number Publication date
JPS60116132A (ja) 1985-06-22

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