JPS60115221A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60115221A
JPS60115221A JP22356683A JP22356683A JPS60115221A JP S60115221 A JPS60115221 A JP S60115221A JP 22356683 A JP22356683 A JP 22356683A JP 22356683 A JP22356683 A JP 22356683A JP S60115221 A JPS60115221 A JP S60115221A
Authority
JP
Japan
Prior art keywords
film
wiring
layer
semiconductor device
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22356683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0228253B2 (enExample
Inventor
Takahiko Moriya
守屋　孝彦
Saburo Nakada
中田　三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22356683A priority Critical patent/JPS60115221A/ja
Publication of JPS60115221A publication Critical patent/JPS60115221A/ja
Publication of JPH0228253B2 publication Critical patent/JPH0228253B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP22356683A 1983-11-28 1983-11-28 半導体装置の製造方法 Granted JPS60115221A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22356683A JPS60115221A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22356683A JPS60115221A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60115221A true JPS60115221A (ja) 1985-06-21
JPH0228253B2 JPH0228253B2 (enExample) 1990-06-22

Family

ID=16800164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22356683A Granted JPS60115221A (ja) 1983-11-28 1983-11-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60115221A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6365643A (ja) * 1986-09-05 1988-03-24 Nec Corp 半導体装置の製造方法
JPS63227037A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 半導体装置の製造方法
JPH01101653A (ja) * 1987-10-15 1989-04-19 Nec Corp 半導体装置
JPH01262644A (ja) * 1988-04-13 1989-10-19 Fujitsu Ltd 配線形成方法
JPH01308050A (ja) * 1987-06-01 1989-12-12 General Electric Co <Ge> アルミニウム物質との低抵抗接点形成方法と、この方法による低抵抗接点と集積回路用多層構造体
JPH0235753A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH03116932A (ja) * 1989-09-29 1991-05-17 Sharp Corp 多層配線の形成方法
JPH04226054A (ja) * 1990-03-02 1992-08-14 Toshiba Corp 多層配線構造を有する半導体装置及びその製造方法
US5663102A (en) * 1994-05-10 1997-09-02 Lg Semicon Co., Ltd. Method for forming multi-layered metal wiring semiconductor element using cmp or etch back

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828856A (ja) * 1981-08-13 1983-02-19 Nec Corp 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828856A (ja) * 1981-08-13 1983-02-19 Nec Corp 半導体装置の製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6365643A (ja) * 1986-09-05 1988-03-24 Nec Corp 半導体装置の製造方法
JPS63227037A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 半導体装置の製造方法
JPH01308050A (ja) * 1987-06-01 1989-12-12 General Electric Co <Ge> アルミニウム物質との低抵抗接点形成方法と、この方法による低抵抗接点と集積回路用多層構造体
JPH01101653A (ja) * 1987-10-15 1989-04-19 Nec Corp 半導体装置
JPH01262644A (ja) * 1988-04-13 1989-10-19 Fujitsu Ltd 配線形成方法
JPH0235753A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH03116932A (ja) * 1989-09-29 1991-05-17 Sharp Corp 多層配線の形成方法
JPH04226054A (ja) * 1990-03-02 1992-08-14 Toshiba Corp 多層配線構造を有する半導体装置及びその製造方法
US5663102A (en) * 1994-05-10 1997-09-02 Lg Semicon Co., Ltd. Method for forming multi-layered metal wiring semiconductor element using cmp or etch back

Also Published As

Publication number Publication date
JPH0228253B2 (enExample) 1990-06-22

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