JPS60113971A - 薄膜電界効果型半導体装置及びその製造方法 - Google Patents

薄膜電界効果型半導体装置及びその製造方法

Info

Publication number
JPS60113971A
JPS60113971A JP58222506A JP22250683A JPS60113971A JP S60113971 A JPS60113971 A JP S60113971A JP 58222506 A JP58222506 A JP 58222506A JP 22250683 A JP22250683 A JP 22250683A JP S60113971 A JPS60113971 A JP S60113971A
Authority
JP
Japan
Prior art keywords
film
thin film
semiconductor
source
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58222506A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0449788B2 (enrdf_load_stackoverflow
Inventor
Sadakichi Hotta
定吉 堀田
Seiichi Nagata
清一 永田
Ikunori Kobayashi
郁典 小林
Shigenobu Shirai
白井　繁信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58222506A priority Critical patent/JPS60113971A/ja
Publication of JPS60113971A publication Critical patent/JPS60113971A/ja
Publication of JPH0449788B2 publication Critical patent/JPH0449788B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

Landscapes

  • Thin Film Transistor (AREA)
JP58222506A 1983-11-26 1983-11-26 薄膜電界効果型半導体装置及びその製造方法 Granted JPS60113971A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58222506A JPS60113971A (ja) 1983-11-26 1983-11-26 薄膜電界効果型半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58222506A JPS60113971A (ja) 1983-11-26 1983-11-26 薄膜電界効果型半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS60113971A true JPS60113971A (ja) 1985-06-20
JPH0449788B2 JPH0449788B2 (enrdf_load_stackoverflow) 1992-08-12

Family

ID=16783492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58222506A Granted JPS60113971A (ja) 1983-11-26 1983-11-26 薄膜電界効果型半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS60113971A (enrdf_load_stackoverflow)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198865A (ja) * 1984-03-23 1985-10-08 Nec Corp 薄膜トランジスタ
JPS615578A (ja) * 1984-06-19 1986-01-11 Nec Corp 薄膜トランジスタ
JPS6189672A (ja) * 1984-10-09 1986-05-07 Agency Of Ind Science & Technol 薄膜トランジスタ
JPS63193568A (ja) * 1987-02-05 1988-08-10 Mitsubishi Electric Corp 薄膜トランジスタ
JPH01102968A (ja) * 1987-10-15 1989-04-20 Nec Corp 液晶パネル装置
JPH01120070A (ja) * 1987-11-02 1989-05-12 Nec Corp 薄膜トランジスタの製造方法
JPH01241175A (ja) * 1988-03-23 1989-09-26 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
JPH01276768A (ja) * 1988-04-28 1989-11-07 Fujitsu Ltd 薄膜トランジスタの製造方法
JPH0230186A (ja) * 1988-07-19 1990-01-31 Agency Of Ind Science & Technol 薄膜電界効果トランジスタとその製造方法
JPH0250483A (ja) * 1988-08-12 1990-02-20 Seikosha Co Ltd シリコン薄膜トランジスタの製造方法
JPH0256822A (ja) * 1988-05-02 1990-02-26 Canon Inc 電子放出素子の製造方法
JPH06291316A (ja) * 1992-02-25 1994-10-18 Semiconductor Energy Lab Co Ltd 薄膜状絶縁ゲイト型半導体装置およびその作製方法
JPH06314698A (ja) * 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JPH06314785A (ja) * 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JPH07176753A (ja) * 1993-12-17 1995-07-14 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
US5821559A (en) * 1991-02-16 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US6953713B2 (en) 1992-05-29 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device and semiconductor memory having thin-film transistors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS=1982 *

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198865A (ja) * 1984-03-23 1985-10-08 Nec Corp 薄膜トランジスタ
JPS615578A (ja) * 1984-06-19 1986-01-11 Nec Corp 薄膜トランジスタ
JPS6189672A (ja) * 1984-10-09 1986-05-07 Agency Of Ind Science & Technol 薄膜トランジスタ
JPS63193568A (ja) * 1987-02-05 1988-08-10 Mitsubishi Electric Corp 薄膜トランジスタ
JPH01102968A (ja) * 1987-10-15 1989-04-20 Nec Corp 液晶パネル装置
JPH01120070A (ja) * 1987-11-02 1989-05-12 Nec Corp 薄膜トランジスタの製造方法
JPH01241175A (ja) * 1988-03-23 1989-09-26 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
JPH01276768A (ja) * 1988-04-28 1989-11-07 Fujitsu Ltd 薄膜トランジスタの製造方法
JPH0256822A (ja) * 1988-05-02 1990-02-26 Canon Inc 電子放出素子の製造方法
JPH0230186A (ja) * 1988-07-19 1990-01-31 Agency Of Ind Science & Technol 薄膜電界効果トランジスタとその製造方法
US5075746A (en) * 1988-07-19 1991-12-24 Agency Of Industrial Science And Technology Thin film field effect transistor and a method of manufacturing the same
JPH0250483A (ja) * 1988-08-12 1990-02-20 Seikosha Co Ltd シリコン薄膜トランジスタの製造方法
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5821559A (en) * 1991-02-16 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
JPH06291316A (ja) * 1992-02-25 1994-10-18 Semiconductor Energy Lab Co Ltd 薄膜状絶縁ゲイト型半導体装置およびその作製方法
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US7148542B2 (en) 1992-02-25 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
US7649227B2 (en) 1992-02-25 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
US6953713B2 (en) 1992-05-29 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device and semiconductor memory having thin-film transistors
US7223996B2 (en) 1992-05-29 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
JPH06314698A (ja) * 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JPH06314785A (ja) * 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JPH07176753A (ja) * 1993-12-17 1995-07-14 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法

Also Published As

Publication number Publication date
JPH0449788B2 (enrdf_load_stackoverflow) 1992-08-12

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