JPS60100451A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS60100451A JPS60100451A JP20755683A JP20755683A JPS60100451A JP S60100451 A JPS60100451 A JP S60100451A JP 20755683 A JP20755683 A JP 20755683A JP 20755683 A JP20755683 A JP 20755683A JP S60100451 A JPS60100451 A JP S60100451A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- etching
- insulating film
- unnecessary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000001312 dry etching Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 238000001020 plasma etching Methods 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20755683A JPS60100451A (ja) | 1983-11-07 | 1983-11-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20755683A JPS60100451A (ja) | 1983-11-07 | 1983-11-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60100451A true JPS60100451A (ja) | 1985-06-04 |
| JPH0220141B2 JPH0220141B2 (enrdf_load_stackoverflow) | 1990-05-08 |
Family
ID=16541688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20755683A Granted JPS60100451A (ja) | 1983-11-07 | 1983-11-07 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60100451A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6267825A (ja) * | 1985-09-20 | 1987-03-27 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体装置の表面を平坦化する方法 |
| JPH029120A (ja) * | 1988-06-28 | 1990-01-12 | Tokuda Seisakusho Ltd | 真空処理装置 |
-
1983
- 1983-11-07 JP JP20755683A patent/JPS60100451A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6267825A (ja) * | 1985-09-20 | 1987-03-27 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体装置の表面を平坦化する方法 |
| JPH029120A (ja) * | 1988-06-28 | 1990-01-12 | Tokuda Seisakusho Ltd | 真空処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0220141B2 (enrdf_load_stackoverflow) | 1990-05-08 |
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