JPS5948929A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5948929A
JPS5948929A JP58145809A JP14580983A JPS5948929A JP S5948929 A JPS5948929 A JP S5948929A JP 58145809 A JP58145809 A JP 58145809A JP 14580983 A JP14580983 A JP 14580983A JP S5948929 A JPS5948929 A JP S5948929A
Authority
JP
Japan
Prior art keywords
circuit
polysiloxane
microns
thickness
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58145809A
Other languages
English (en)
Japanese (ja)
Inventor
セオドア・フランク・レタジエスイク・ジユニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5948929A publication Critical patent/JPS5948929A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP58145809A 1982-08-13 1983-08-11 半導体装置 Pending JPS5948929A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40800582A 1982-08-13 1982-08-13
US408005 1982-08-13

Publications (1)

Publication Number Publication Date
JPS5948929A true JPS5948929A (ja) 1984-03-21

Family

ID=23614453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58145809A Pending JPS5948929A (ja) 1982-08-13 1983-08-11 半導体装置

Country Status (8)

Country Link
JP (1) JPS5948929A (fr)
BE (1) BE897503A (fr)
CA (1) CA1204527A (fr)
DE (1) DE3329065A1 (fr)
FR (1) FR2531811B1 (fr)
GB (1) GB2125423B (fr)
IT (1) IT1203708B (fr)
NL (1) NL8302845A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225447A (ja) * 1984-04-23 1985-11-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPS62106632A (ja) * 1985-10-31 1987-05-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 有機ガラス絶縁層を形成する方法
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
JPH02291129A (ja) * 1989-04-28 1990-11-30 Nec Corp 半導体装置

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0204631A3 (fr) * 1985-06-04 1987-05-20 Fairchild Semiconductor Corporation Structures semi-conductrices comprenant des couches de nivellement en polysiloxane
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4749631B1 (en) * 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
US4911992A (en) * 1986-12-04 1990-03-27 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
US4753855A (en) * 1986-12-04 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from metal oxides for protection of electronic devices
JPS63213347A (ja) * 1987-02-27 1988-09-06 Mitsubishi Electric Corp 半導体装置
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
IT1226701B (it) * 1988-07-29 1991-02-05 Eniricerche Spa Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.
DE9206834U1 (de) * 1992-02-21 1993-06-17 Robert Bosch Gmbh, 70469 Stuttgart Anschlußteil
JP2934353B2 (ja) * 1992-06-24 1999-08-16 三菱電機株式会社 半導体装置およびその製造方法
JP3262334B2 (ja) 1992-07-04 2002-03-04 トリコン ホルディングズ リミテッド 半導体ウエハーを処理する方法
EP0736905B1 (fr) * 1993-08-05 2006-01-04 Matsushita Electric Industrial Co., Ltd. Dispositif semi-conducteur avec un condensateur et son procédé de fabrication
US5858880A (en) * 1994-05-14 1999-01-12 Trikon Equipment Limited Method of treating a semi-conductor wafer
WO1998008249A1 (fr) 1996-08-24 1998-02-26 Trikon Equipments Limited Procede et appareil de depot d'une couche dielectrique planarisee sur un substrat a semi-conducteur
TW437017B (en) * 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6503633B2 (en) * 2000-05-22 2003-01-07 Jsr Corporation Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
US7834119B2 (en) 2002-04-18 2010-11-16 Lg Chem, Ltd. Organic silicate polymer and insulation film comprising the same
WO2007064065A2 (fr) 2005-11-30 2007-06-07 Lg Chem, Ltd. Mousse microcellulaire de resine thermoplastique preparee avec un colorant possedant une propriete de refroidissement amelioree et son procede d'elaboration

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1347948A (fr) * 1961-12-15 1964-01-04 Pacific Semiconductors Procédé d'estérification du bioxyde de silicium à la pression atmosphérique
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225447A (ja) * 1984-04-23 1985-11-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0564464B2 (fr) * 1984-04-23 1993-09-14 Mitsubishi Electric Corp
JPS62106632A (ja) * 1985-10-31 1987-05-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 有機ガラス絶縁層を形成する方法
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
JPH02291129A (ja) * 1989-04-28 1990-11-30 Nec Corp 半導体装置

Also Published As

Publication number Publication date
IT8322560A0 (it) 1983-08-12
FR2531811A1 (fr) 1984-02-17
DE3329065A1 (de) 1984-02-16
GB2125423A (en) 1984-03-07
GB2125423B (en) 1985-09-04
GB8321502D0 (en) 1983-09-14
FR2531811B1 (fr) 1986-10-31
BE897503A (fr) 1983-12-01
NL8302845A (nl) 1984-03-01
IT1203708B (it) 1989-02-15
CA1204527A (fr) 1986-05-13

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