GB2125423B - Polymeric films for electronic circuits - Google Patents

Polymeric films for electronic circuits

Info

Publication number
GB2125423B
GB2125423B GB08321502A GB8321502A GB2125423B GB 2125423 B GB2125423 B GB 2125423B GB 08321502 A GB08321502 A GB 08321502A GB 8321502 A GB8321502 A GB 8321502A GB 2125423 B GB2125423 B GB 2125423B
Authority
GB
United Kingdom
Prior art keywords
electronic circuits
polymeric films
polymeric
films
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08321502A
Other versions
GB8321502D0 (en
GB2125423A (en
Inventor
Theodore Frank Retajczyk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB8321502D0 publication Critical patent/GB8321502D0/en
Publication of GB2125423A publication Critical patent/GB2125423A/en
Application granted granted Critical
Publication of GB2125423B publication Critical patent/GB2125423B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
GB08321502A 1982-08-13 1983-08-10 Polymeric films for electronic circuits Expired GB2125423B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40800582A 1982-08-13 1982-08-13

Publications (3)

Publication Number Publication Date
GB8321502D0 GB8321502D0 (en) 1983-09-14
GB2125423A GB2125423A (en) 1984-03-07
GB2125423B true GB2125423B (en) 1985-09-04

Family

ID=23614453

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08321502A Expired GB2125423B (en) 1982-08-13 1983-08-10 Polymeric films for electronic circuits

Country Status (8)

Country Link
JP (1) JPS5948929A (en)
BE (1) BE897503A (en)
CA (1) CA1204527A (en)
DE (1) DE3329065A1 (en)
FR (1) FR2531811B1 (en)
GB (1) GB2125423B (en)
IT (1) IT1203708B (en)
NL (1) NL8302845A (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225447A (en) * 1984-04-23 1985-11-09 Mitsubishi Electric Corp Manufacture of semiconductor device
EP0204631A3 (en) * 1985-06-04 1987-05-20 Fairchild Semiconductor Corporation Semiconductor structures having polysiloxane leveling film
US4723978A (en) * 1985-10-31 1988-02-09 International Business Machines Corporation Method for a plasma-treated polysiloxane coating
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4749631B1 (en) * 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
US4911992A (en) * 1986-12-04 1990-03-27 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
US4753855A (en) * 1986-12-04 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from metal oxides for protection of electronic devices
JPS63213347A (en) * 1987-02-27 1988-09-06 Mitsubishi Electric Corp Semiconductor device
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
IT1226701B (en) * 1988-07-29 1991-02-05 Eniricerche Spa PROCEDURE FOR THE DEPOSITION OF ORGANOSILANS ON SILICON OR SILICON OXIDE SUBSTRATES FOR DEVICES OF THE EOS OR CHEMFET TYPE.
JPH02291129A (en) * 1989-04-28 1990-11-30 Nec Corp Semiconductor device
DE9206834U1 (en) * 1992-02-21 1993-06-17 Robert Bosch Gmbh, 7000 Stuttgart, De
JP2934353B2 (en) * 1992-06-24 1999-08-16 三菱電機株式会社 Semiconductor device and manufacturing method thereof
US5874367A (en) 1992-07-04 1999-02-23 Trikon Technologies Limited Method of treating a semi-conductor wafer
EP0738013B1 (en) * 1993-08-05 2003-10-15 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor device having a high dielectric constant capacitor
US5858880A (en) * 1994-05-14 1999-01-12 Trikon Equipment Limited Method of treating a semi-conductor wafer
DE19781956B4 (en) 1996-08-24 2006-06-14 Trikon Equipments Ltd., Newport Method for applying a planarized dielectric layer on a semiconductor substrate
TW437017B (en) * 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6503633B2 (en) * 2000-05-22 2003-01-07 Jsr Corporation Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
ATE401364T1 (en) 2002-04-18 2008-08-15 Lg Chemical Ltd ORGANIC SILICATE POLYMER AND COMPREHENSIVE INSULATING FILM
WO2007064065A2 (en) 2005-11-30 2007-06-07 Lg Chem, Ltd. Microcellular foam of thermoplastic resin prepared with die having improved cooling property and method for preparing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1347948A (en) * 1961-12-15 1964-01-04 Pacific Semiconductors Process for esterification of silicon dioxide at atmospheric pressure
JPS5850417B2 (en) * 1979-07-31 1983-11-10 富士通株式会社 Manufacturing method of semiconductor device
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition

Also Published As

Publication number Publication date
NL8302845A (en) 1984-03-01
FR2531811B1 (en) 1986-10-31
CA1204527A (en) 1986-05-13
FR2531811A1 (en) 1984-02-17
BE897503A (en) 1983-12-01
JPS5948929A (en) 1984-03-21
IT8322560A0 (en) 1983-08-12
GB8321502D0 (en) 1983-09-14
DE3329065A1 (en) 1984-02-16
GB2125423A (en) 1984-03-07
IT1203708B (en) 1989-02-15

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee