GB8306026D0 - Polymeric films - Google Patents

Polymeric films

Info

Publication number
GB8306026D0
GB8306026D0 GB838306026A GB8306026A GB8306026D0 GB 8306026 D0 GB8306026 D0 GB 8306026D0 GB 838306026 A GB838306026 A GB 838306026A GB 8306026 A GB8306026 A GB 8306026A GB 8306026 D0 GB8306026 D0 GB 8306026D0
Authority
GB
United Kingdom
Prior art keywords
polymeric films
polymeric
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB838306026A
Other versions
GB2121315B (en
GB2121315A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Publication of GB8306026D0 publication Critical patent/GB8306026D0/en
Publication of GB2121315A publication Critical patent/GB2121315A/en
Application granted granted Critical
Publication of GB2121315B publication Critical patent/GB2121315B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02285—Langmuir-Blodgett techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/701—Langmuir Blodgett films
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/20—Organic diodes
    • H10K10/23—Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
GB08306026A 1982-03-05 1983-03-04 Polymer films Expired GB2121315B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08206563A GB2117669A (en) 1982-03-05 1982-03-05 Polymeric films

Publications (3)

Publication Number Publication Date
GB8306026D0 true GB8306026D0 (en) 1983-04-07
GB2121315A GB2121315A (en) 1983-12-21
GB2121315B GB2121315B (en) 1985-08-29

Family

ID=10528813

Family Applications (2)

Application Number Title Priority Date Filing Date
GB08206563A Withdrawn GB2117669A (en) 1982-03-05 1982-03-05 Polymeric films
GB08306026A Expired GB2121315B (en) 1982-03-05 1983-03-04 Polymer films

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB08206563A Withdrawn GB2117669A (en) 1982-03-05 1982-03-05 Polymeric films

Country Status (4)

Country Link
EP (1) EP0114851A1 (en)
JP (1) JPS59500339A (en)
GB (2) GB2117669A (en)
WO (1) WO1983003165A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611385A (en) * 1982-06-18 1986-09-16 At&T Bell Laboratories Devices formed utilizing organic materials
FR2556244B1 (en) * 1983-12-09 1986-08-08 Commissariat Energie Atomique DEVICE FOR FORMING AND DEPOSITING ON A SUBSTRATE OF MONOMOLECULAR LAYERS
FR2564231B1 (en) * 1984-05-10 1986-09-05 Commissariat Energie Atomique ELECTRICALLY CONDUCTIVE FILMS COMPRISING AT LEAST ONE MONOMOLECULAR LAYER OF AN ORGANIC COMPLEX WITH LOAD TRANSFER AND THEIR MANUFACTURING METHOD
EP0244835B1 (en) * 1986-05-09 1992-08-26 Nippon Oil And Fats Company, Limited Langmuir-blodgett ultrathin membrane of polyfumurate
FI77679C (en) * 1987-02-23 1989-04-10 K & V Licencing Oy Film aggregate and process for its preparation.
WO1989003588A1 (en) * 1987-10-09 1989-04-20 Hughes Aircraft Company GaAs ELECTRICAL CIRCUIT DEVICES WITH LANGMUIR-BLODGETT INSULATOR LAYER
US5079179A (en) * 1987-10-09 1992-01-07 Hughes Aircraft Company Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer
DE3843194A1 (en) * 1988-12-22 1990-07-12 Hoechst Ag AMPHIPHILE MONOMERS WITH MIXED-CHAIN STRUCTURE AND POLYMERS AND FILM FROM AT LEAST ONE MONOMOLECULAR LAYER THEREOF
DE3911929A1 (en) * 1989-04-12 1990-10-18 Hoechst Ag AMPHIPHILES MONOMERS AND POLYMERS AND FILM OF AT LEAST ONE MONOMOLECULAR LAYER THEREOF
EP0503420A1 (en) * 1991-03-15 1992-09-16 Hoechst Aktiengesellschaft Amphiphilic polymers with silane units and film with at least one monomolecular layer of such a polymer
CN1064379C (en) * 1998-12-05 2001-04-11 中国科学院固体物理研究所 Porous figure film of alternate styrene-maleic anhydride copolymer and its preparation
CN102015543B (en) * 2008-04-24 2013-09-11 第一绿色园林私人公司 Solar stills
KR101783420B1 (en) * 2016-05-12 2017-10-11 한국화학연구원 Composition for insulator of thin film transistor, insulator and organic thin film transistor prepared thereby

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1125258A (en) * 1968-02-08 1968-08-28 Engels Chemiefaserwerk Veb A process for the continuous production of high polymer polyesters or mixed polyesters
GB1218634A (en) * 1968-04-16 1971-01-06 Nat Res Dev Method of very low-temperature heat exchange
GB1572181A (en) * 1975-08-18 1980-07-23 Ici Ltd Device comprising a thin film of organic materila

Also Published As

Publication number Publication date
WO1983003165A1 (en) 1983-09-15
JPS59500339A (en) 1984-03-01
EP0114851A1 (en) 1984-08-08
GB2121315B (en) 1985-08-29
GB2117669A (en) 1983-10-19
GB2121315A (en) 1983-12-21

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee