IT1203708B - Pellicole polimere per circuiti elettronici - Google Patents

Pellicole polimere per circuiti elettronici

Info

Publication number
IT1203708B
IT1203708B IT22560/83A IT2256083A IT1203708B IT 1203708 B IT1203708 B IT 1203708B IT 22560/83 A IT22560/83 A IT 22560/83A IT 2256083 A IT2256083 A IT 2256083A IT 1203708 B IT1203708 B IT 1203708B
Authority
IT
Italy
Prior art keywords
electronic circuits
polymer films
films
polymer
circuits
Prior art date
Application number
IT22560/83A
Other languages
English (en)
Other versions
IT8322560A0 (it
Inventor
Theodore Frank Retajczvk
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT8322560A0 publication Critical patent/IT8322560A0/it
Application granted granted Critical
Publication of IT1203708B publication Critical patent/IT1203708B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
IT22560/83A 1982-08-13 1983-08-12 Pellicole polimere per circuiti elettronici IT1203708B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40800582A 1982-08-13 1982-08-13

Publications (2)

Publication Number Publication Date
IT8322560A0 IT8322560A0 (it) 1983-08-12
IT1203708B true IT1203708B (it) 1989-02-15

Family

ID=23614453

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22560/83A IT1203708B (it) 1982-08-13 1983-08-12 Pellicole polimere per circuiti elettronici

Country Status (8)

Country Link
JP (1) JPS5948929A (it)
BE (1) BE897503A (it)
CA (1) CA1204527A (it)
DE (1) DE3329065A1 (it)
FR (1) FR2531811B1 (it)
GB (1) GB2125423B (it)
IT (1) IT1203708B (it)
NL (1) NL8302845A (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225447A (ja) * 1984-04-23 1985-11-09 Mitsubishi Electric Corp 半導体装置の製造方法
EP0204631A3 (en) * 1985-06-04 1987-05-20 Fairchild Semiconductor Corporation Semiconductor structures having polysiloxane leveling film
US4723978A (en) * 1985-10-31 1988-02-09 International Business Machines Corporation Method for a plasma-treated polysiloxane coating
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4753855A (en) * 1986-12-04 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from metal oxides for protection of electronic devices
US4749631B1 (en) * 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
US4911992A (en) * 1986-12-04 1990-03-27 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
JPS63213347A (ja) * 1987-02-27 1988-09-06 Mitsubishi Electric Corp 半導体装置
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
IT1226701B (it) * 1988-07-29 1991-02-05 Eniricerche Spa Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.
JPH02291129A (ja) * 1989-04-28 1990-11-30 Nec Corp 半導体装置
DE9206834U1 (it) * 1992-02-21 1993-06-17 Robert Bosch Gmbh, 7000 Stuttgart, De
JP2934353B2 (ja) * 1992-06-24 1999-08-16 三菱電機株式会社 半導体装置およびその製造方法
JP3262334B2 (ja) 1992-07-04 2002-03-04 トリコン ホルディングズ リミテッド 半導体ウエハーを処理する方法
EP0642167A3 (en) * 1993-08-05 1995-06-28 Matsushita Electronics Corp Semiconductor device with capacitor and manufacturing process.
US5858880A (en) * 1994-05-14 1999-01-12 Trikon Equipment Limited Method of treating a semi-conductor wafer
KR100440233B1 (ko) 1996-08-24 2004-07-15 트리콘 이큅먼츠 리미티드 반도체 기판 처리방법
TW437017B (en) * 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6503633B2 (en) * 2000-05-22 2003-01-07 Jsr Corporation Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
WO2003104305A1 (en) * 2002-04-18 2003-12-18 Lg Chem, Ltd. Organic silicate polymer and insulation film comprising the same
CN103030832B (zh) 2005-11-30 2015-07-08 Lg化学株式会社 用具有改善的冷却性模具制备热塑性树脂微孔泡沫的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1347948A (fr) * 1961-12-15 1964-01-04 Pacific Semiconductors Procédé d'estérification du bioxyde de silicium à la pression atmosphérique
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition

Also Published As

Publication number Publication date
GB2125423A (en) 1984-03-07
DE3329065A1 (de) 1984-02-16
BE897503A (fr) 1983-12-01
FR2531811B1 (fr) 1986-10-31
CA1204527A (en) 1986-05-13
FR2531811A1 (fr) 1984-02-17
GB2125423B (en) 1985-09-04
GB8321502D0 (en) 1983-09-14
IT8322560A0 (it) 1983-08-12
NL8302845A (nl) 1984-03-01
JPS5948929A (ja) 1984-03-21

Similar Documents

Publication Publication Date Title
IT1203708B (it) Pellicole polimere per circuiti elettronici
IT1161844B (it) Apparato per il collaudo ci circuiti integrati
GB2117970B (en) Thin film transistor integrated circuit
DK164183A (da) Tykfilmlederkompositioner
IT1194368B (it) Elemento circuitale elettrico
AR226460A1 (es) Un alojamiento para circuitos electronicos
IT7912667A0 (it) Morsetto per circuiti stampati
DE3379434D1 (de) Integrated circuit voltage multiplier
FR2534045B1 (fr) Circuit additionneur numerique
IT1206328B (it) Dispositivo di fissaggio per pannelli di circuiti stampati.
ES528336A0 (es) Metodo para encapsular circuitos electronicos
IT1137369B (it) Apparecciatura di interruzione di circuiti
FR2535126B1 (fr) Circuit de retardateur
IT1195963B (it) Procedimento di fabbricazione di circuiti stampati
IT1171786B (it) Circuito rivelatore di segnali in particolare per applicazioni telefoniche
IT8168022A0 (it) Dispositivo per schermare circuiti elettrici
MX150954A (es) Mejoras en circuito hibrido electronico para linea telefonica
FI830324L (fi) Elektroniskt ballastsystem foer gasurladdningsroer
IT8422489A0 (it) Dispositivo per intercollegare circuiti stampati.
GB1540112A (en) Multi-layer electronic film circuits
IT1137014B (it) Procedimento di fabbricazione di circuiti stampati
IT8321012A0 (it) Commutatore elettrico per circuiti a film spesso/sottile.
IT1163335B (it) Dispositivo di commutazione per circuiti a film spesso/sottile
IT1139888B (it) Circuiti di protezione per dispositivi a circuito integrato
GB2131624B (en) Thick film circuits