IT1203708B - Pellicole polimere per circuiti elettronici - Google Patents

Pellicole polimere per circuiti elettronici

Info

Publication number
IT1203708B
IT1203708B IT22560/83A IT2256083A IT1203708B IT 1203708 B IT1203708 B IT 1203708B IT 22560/83 A IT22560/83 A IT 22560/83A IT 2256083 A IT2256083 A IT 2256083A IT 1203708 B IT1203708 B IT 1203708B
Authority
IT
Italy
Prior art keywords
electronic circuits
polymer films
films
polymer
circuits
Prior art date
Application number
IT22560/83A
Other languages
English (en)
Other versions
IT8322560A0 (it
Inventor
Theodore Frank Retajczvk
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT8322560A0 publication Critical patent/IT8322560A0/it
Application granted granted Critical
Publication of IT1203708B publication Critical patent/IT1203708B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
IT22560/83A 1982-08-13 1983-08-12 Pellicole polimere per circuiti elettronici IT1203708B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40800582A 1982-08-13 1982-08-13

Publications (2)

Publication Number Publication Date
IT8322560A0 IT8322560A0 (it) 1983-08-12
IT1203708B true IT1203708B (it) 1989-02-15

Family

ID=23614453

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22560/83A IT1203708B (it) 1982-08-13 1983-08-12 Pellicole polimere per circuiti elettronici

Country Status (8)

Country Link
JP (1) JPS5948929A (it)
BE (1) BE897503A (it)
CA (1) CA1204527A (it)
DE (1) DE3329065A1 (it)
FR (1) FR2531811B1 (it)
GB (1) GB2125423B (it)
IT (1) IT1203708B (it)
NL (1) NL8302845A (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225447A (ja) * 1984-04-23 1985-11-09 Mitsubishi Electric Corp 半導体装置の製造方法
EP0204631A3 (en) * 1985-06-04 1987-05-20 Fairchild Semiconductor Corporation Semiconductor structures having polysiloxane leveling film
US4723978A (en) * 1985-10-31 1988-02-09 International Business Machines Corporation Method for a plasma-treated polysiloxane coating
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4911992A (en) * 1986-12-04 1990-03-27 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
US4749631B1 (en) * 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
US4753855A (en) * 1986-12-04 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from metal oxides for protection of electronic devices
JPS63213347A (ja) * 1987-02-27 1988-09-06 Mitsubishi Electric Corp 半導体装置
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
IT1226701B (it) * 1988-07-29 1991-02-05 Eniricerche Spa Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.
JPH02291129A (ja) * 1989-04-28 1990-11-30 Nec Corp 半導体装置
DE9206834U1 (de) * 1992-02-21 1993-06-17 Robert Bosch Gmbh, 70469 Stuttgart Anschlußteil
JP2934353B2 (ja) * 1992-06-24 1999-08-16 三菱電機株式会社 半導体装置およびその製造方法
DE69327176T2 (de) 1992-07-04 2000-05-31 Trikon Equipments Ltd., Littleton-Upon-Severn Behandlungsverfahren für eine halbleiterscheibe.
DE69434606T8 (de) * 1993-08-05 2007-05-16 Matsushita Electric Industrial Co., Ltd., Kadoma Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
US5858880A (en) * 1994-05-14 1999-01-12 Trikon Equipment Limited Method of treating a semi-conductor wafer
DE19781956T1 (de) 1996-08-24 1999-07-08 Trikon Equip Ltd Verfahren und Vorrichtung zum Aufbringen einer planarisierten dielektrischen Schicht auf einem Halbleitersubstrat
TW437017B (en) * 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
TW524883B (en) * 2000-05-22 2003-03-21 Jsr Corp Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
CN100381483C (zh) * 2002-04-18 2008-04-16 Lg化学株式会社 有机硅酸酯聚合物和包含该有机硅酸酯聚合物的绝缘薄膜
CN103030832B (zh) 2005-11-30 2015-07-08 Lg化学株式会社 用具有改善的冷却性模具制备热塑性树脂微孔泡沫的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1347948A (fr) * 1961-12-15 1964-01-04 Pacific Semiconductors Procédé d'estérification du bioxyde de silicium à la pression atmosphérique
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition

Also Published As

Publication number Publication date
CA1204527A (en) 1986-05-13
NL8302845A (nl) 1984-03-01
GB8321502D0 (en) 1983-09-14
GB2125423B (en) 1985-09-04
BE897503A (fr) 1983-12-01
GB2125423A (en) 1984-03-07
DE3329065A1 (de) 1984-02-16
FR2531811B1 (fr) 1986-10-31
IT8322560A0 (it) 1983-08-12
FR2531811A1 (fr) 1984-02-17
JPS5948929A (ja) 1984-03-21

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