IT1226701B - Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. - Google Patents
Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet.Info
- Publication number
- IT1226701B IT1226701B IT8821550A IT2155088A IT1226701B IT 1226701 B IT1226701 B IT 1226701B IT 8821550 A IT8821550 A IT 8821550A IT 2155088 A IT2155088 A IT 2155088A IT 1226701 B IT1226701 B IT 1226701B
- Authority
- IT
- Italy
- Prior art keywords
- silicon
- organosilans
- eos
- deposition
- procedure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8821550A IT1226701B (it) | 1988-07-29 | 1988-07-29 | Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. |
EP89201965A EP0353818A1 (en) | 1988-07-29 | 1989-07-26 | Process for depositing organosilanes on substrates of silicon or silicon oxide for devices of EOS or CHEMFET type |
JP1194431A JPH0278225A (ja) | 1988-07-29 | 1989-07-28 | オルガノシランの析出法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8821550A IT1226701B (it) | 1988-07-29 | 1988-07-29 | Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8821550A0 IT8821550A0 (it) | 1988-07-29 |
IT1226701B true IT1226701B (it) | 1991-02-05 |
Family
ID=11183468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8821550A IT1226701B (it) | 1988-07-29 | 1988-07-29 | Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0353818A1 (it) |
JP (1) | JPH0278225A (it) |
IT (1) | IT1226701B (it) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69130947T2 (de) * | 1991-01-08 | 1999-07-08 | Fujitsu Ltd | Verfahren zur bildung eines siliciumoxid-filmes |
CA2112467A1 (en) * | 1991-06-28 | 1993-01-07 | Orville M. Wiste | Flexible, transparent film for electrostatic shielding and method of making such film |
AU4506993A (en) | 1992-07-04 | 1994-01-31 | Christopher David Dobson | A method of treating a semiconductor wafer |
JPH06161707A (ja) * | 1992-11-20 | 1994-06-10 | Pfu Ltd | 文字コード切換処理方式 |
US5858880A (en) * | 1994-05-14 | 1999-01-12 | Trikon Equipment Limited | Method of treating a semi-conductor wafer |
WO1998008249A1 (en) | 1996-08-24 | 1998-02-26 | Trikon Equipments Limited | Method and apparatus for depositing a planarized dielectric layer on a semiconductor substrate |
US6974766B1 (en) * | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5825221B2 (ja) * | 1977-12-12 | 1983-05-26 | 株式会社クラレ | Fet比較電極 |
CA1204527A (en) * | 1982-08-13 | 1986-05-13 | Theodore F. Retajczyk, Jr. | Polymeric films for electronic circuits |
DE3526348A1 (de) * | 1985-07-23 | 1987-02-05 | Fraunhofer Ges Forschung | Sensoren fuer die selektive bestimmung von komponenten in fluessiger oder gasfoermiger phase |
-
1988
- 1988-07-29 IT IT8821550A patent/IT1226701B/it active
-
1989
- 1989-07-26 EP EP89201965A patent/EP0353818A1/en not_active Withdrawn
- 1989-07-28 JP JP1194431A patent/JPH0278225A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH0278225A (ja) | 1990-03-19 |
IT8821550A0 (it) | 1988-07-29 |
EP0353818A1 (en) | 1990-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR890001159A (ko) | 반도체 소자 이송 또는 보유 반도체 장치용 부재 | |
DE3675565D1 (de) | Substratstruktur fuer halbleiteranordnung. | |
DE3577692D1 (de) | Siliciumnitrid enthaltendes keramisches material. | |
DE3584915D1 (de) | Halbleitermaterial und substrat. | |
DE69101818D1 (de) | Halbleitersubstrat-Ätzgerät. | |
DE3480628D1 (de) | Metallisierung eines keramischen substrates. | |
IT1190325B (it) | Circuito di polarizzazione per dispositivi integrati in tecnologia mos,particolarmente di tipo misto digitale-analogico | |
DE3687041T2 (de) | Maskenanordnung fuer vakuumbeschichtungsvorrichtungen. | |
NO830672L (no) | Fremgangsmaate for inhibering av dannelse av silisiumdioksydbelegg. | |
DE69205171T2 (de) | Grundiermittel für Silikonsubstrate. | |
JPS57198643A (en) | Semiconductor substrate | |
IT1226701B (it) | Procedimento per la deposizione di organosilani su substrati di silicio o di ossido di silicio per dispositivi del tipo eos o chemfet. | |
DE68918799D1 (de) | Verbindungshalbleitersubstrat. | |
DE69203356T2 (de) | Arbeitsfläche geringer Verunreinigung zur Herstellung von Silicium der Halbleitergeräte. | |
IT1257386B (it) | Supporto rivestito con diamante. | |
DE3668716D1 (de) | Halbleitersubstratvorspannungsgenerator. | |
IT8622215A0 (it) | Rivestimenti flessibili per la pulitura desolfatante di superfici affrescate. | |
NO883052D0 (no) | Silikonsammensetninger inneholdende aluminiumoksid for korrosjonsbeskyttelse. | |
ITMI920338A0 (it) | Dispositivo di isolamento del substrato | |
DE3767732D1 (de) | Beschichtete substrate. | |
DE3881118D1 (de) | Metallkeramische supraleitende beschichtungen. | |
DE3852983T2 (de) | Zusammensetzungen mit hoher wirksamer Oberfläche. | |
FR2620271B1 (fr) | Dispositif semiconducteur de protection contre les surtensions | |
DE3786343T2 (de) | Elektrooptisches Halbleiterbauelement. | |
IT1204044B (it) | Procedimento per la concentrazione del carburo di silicio |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19960717 |