DE69101818D1 - Halbleitersubstrat-Ätzgerät. - Google Patents

Halbleitersubstrat-Ätzgerät.

Info

Publication number
DE69101818D1
DE69101818D1 DE69101818T DE69101818T DE69101818D1 DE 69101818 D1 DE69101818 D1 DE 69101818D1 DE 69101818 T DE69101818 T DE 69101818T DE 69101818 T DE69101818 T DE 69101818T DE 69101818 D1 DE69101818 D1 DE 69101818D1
Authority
DE
Germany
Prior art keywords
etcher
semiconductor substrate
semiconductor
substrate
substrate etcher
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69101818T
Other languages
English (en)
Other versions
DE69101818T2 (de
Inventor
Kiyoshi Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69101818D1 publication Critical patent/DE69101818D1/de
Application granted granted Critical
Publication of DE69101818T2 publication Critical patent/DE69101818T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE69101818T 1990-09-14 1991-09-13 Halbleitersubstrat-Ätzgerät. Expired - Fee Related DE69101818T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2245396A JPH0810686B2 (ja) 1990-09-14 1990-09-14 半導体基板エッチング処理装置

Publications (2)

Publication Number Publication Date
DE69101818D1 true DE69101818D1 (de) 1994-06-01
DE69101818T2 DE69101818T2 (de) 1994-09-01

Family

ID=17133034

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69101818T Expired - Fee Related DE69101818T2 (de) 1990-09-14 1991-09-13 Halbleitersubstrat-Ätzgerät.

Country Status (5)

Country Link
US (1) US5176783A (de)
EP (1) EP0475435B1 (de)
JP (1) JPH0810686B2 (de)
KR (1) KR940010504B1 (de)
DE (1) DE69101818T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3005373B2 (ja) * 1992-10-23 2000-01-31 東京エレクトロン株式会社 処理装置
US5372652A (en) * 1993-06-14 1994-12-13 International Business Machines Corporation Aerosol cleaning method
EP0634699A1 (de) * 1993-07-16 1995-01-18 Semiconductor Systems, Inc. Gruppiertes fotolithografisches System
US5474647A (en) * 1993-11-15 1995-12-12 Hughes Aircraft Company Wafer flow architecture for production wafer processing
US6127279A (en) * 1994-09-26 2000-10-03 Semiconductor Energy Laboratory Co., Ltd. Solution applying method
US5855465A (en) * 1996-04-16 1999-01-05 Gasonics International Semiconductor wafer processing carousel
US5863170A (en) * 1996-04-16 1999-01-26 Gasonics International Modular process system
US5667592A (en) * 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
DE19854743A1 (de) * 1998-11-27 2000-06-08 Sez Semiconduct Equip Zubehoer Vorrichtung zum Naßätzen einer Kante einer Halbleiterscheibe
JP4074018B2 (ja) * 1998-12-22 2008-04-09 東芝松下ディスプレイテクノロジー株式会社 薄膜のパターニング方法
US6523553B1 (en) 1999-03-30 2003-02-25 Applied Materials, Inc. Wafer edge cleaning method and apparatus
JP2000331975A (ja) * 1999-05-19 2000-11-30 Ebara Corp ウエハ洗浄装置
US6516815B1 (en) * 1999-07-09 2003-02-11 Applied Materials, Inc. Edge bead removal/spin rinse dry (EBR/SRD) module
US6824612B2 (en) 2001-12-26 2004-11-30 Applied Materials, Inc. Electroless plating system
US6770565B2 (en) 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
JP4289102B2 (ja) * 2003-09-26 2009-07-01 パナソニック株式会社 組立装置および組立方法ならびに端子洗浄装置
KR100684047B1 (ko) * 2004-10-14 2007-02-16 주식회사 디엠에스 기판상에 식각영역을 만들기 위한 장치
JP4601452B2 (ja) * 2005-02-22 2010-12-22 大日本スクリーン製造株式会社 基板処理装置
JP3933670B2 (ja) * 2005-03-29 2007-06-20 東京エレクトロン株式会社 基板洗浄方法及び基板洗浄装置
JP4438709B2 (ja) * 2005-07-19 2010-03-24 株式会社Ｓｕｍｃｏ ウェーハの枚葉式エッチング方法
US7521915B2 (en) * 2006-04-25 2009-04-21 Sokudo Co., Ltd. Wafer bevel particle detection
CN101458414B (zh) * 2007-12-13 2011-01-26 比亚迪股份有限公司 显示面板电极的防腐蚀方法和防腐蚀热烫装置
JP6306974B2 (ja) * 2013-12-20 2018-04-04 東京エレクトロン株式会社 塗布膜除去装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2598305B2 (ja) * 1988-06-06 1997-04-09 日東電工株式会社 半導体ウエハの処理システム
JPH02130922A (ja) * 1988-11-11 1990-05-18 Toshiba Corp 半導体基板エッチング装置
JP2528962B2 (ja) * 1989-02-27 1996-08-28 株式会社日立製作所 試料処理方法及び装置

Also Published As

Publication number Publication date
EP0475435B1 (de) 1994-04-27
US5176783A (en) 1993-01-05
KR940010504B1 (ko) 1994-10-24
JPH04124827A (ja) 1992-04-24
EP0475435A1 (de) 1992-03-18
JPH0810686B2 (ja) 1996-01-31
KR920007110A (ko) 1992-04-28
DE69101818T2 (de) 1994-09-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee