JPS59204273A - 薄膜トランジスタ - Google Patents

薄膜トランジスタ

Info

Publication number
JPS59204273A
JPS59204273A JP58078218A JP7821883A JPS59204273A JP S59204273 A JPS59204273 A JP S59204273A JP 58078218 A JP58078218 A JP 58078218A JP 7821883 A JP7821883 A JP 7821883A JP S59204273 A JPS59204273 A JP S59204273A
Authority
JP
Japan
Prior art keywords
film
chromium
thin film
film transistor
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58078218A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0547994B2 (enrdf_load_html_response
Inventor
Tomoji Okada
岡田　智司
Yuji Kamogawa
鴨川　裕司
Masaaki Kobayashi
正秋 小林
Tokuhide Shimojo
徳英 下条
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noritake Itron Corp
Original Assignee
Ise Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ise Electronics Corp filed Critical Ise Electronics Corp
Priority to JP58078218A priority Critical patent/JPS59204273A/ja
Publication of JPS59204273A publication Critical patent/JPS59204273A/ja
Publication of JPH0547994B2 publication Critical patent/JPH0547994B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium

Landscapes

  • Thin Film Transistor (AREA)
JP58078218A 1983-05-06 1983-05-06 薄膜トランジスタ Granted JPS59204273A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58078218A JPS59204273A (ja) 1983-05-06 1983-05-06 薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58078218A JPS59204273A (ja) 1983-05-06 1983-05-06 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS59204273A true JPS59204273A (ja) 1984-11-19
JPH0547994B2 JPH0547994B2 (enrdf_load_html_response) 1993-07-20

Family

ID=13655904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58078218A Granted JPS59204273A (ja) 1983-05-06 1983-05-06 薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS59204273A (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005093974A (ja) * 2003-09-18 2005-04-07 Ind Technol Res Inst 薄膜トランジスタ素子活性層の半導体材料とその製造方法
CN100465742C (zh) * 1992-08-27 2009-03-04 株式会社半导体能源研究所 有源矩阵显示器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100465742C (zh) * 1992-08-27 2009-03-04 株式会社半导体能源研究所 有源矩阵显示器
JP2005093974A (ja) * 2003-09-18 2005-04-07 Ind Technol Res Inst 薄膜トランジスタ素子活性層の半導体材料とその製造方法

Also Published As

Publication number Publication date
JPH0547994B2 (enrdf_load_html_response) 1993-07-20

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