JPS6468969A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6468969A JPS6468969A JP62225722A JP22572287A JPS6468969A JP S6468969 A JPS6468969 A JP S6468969A JP 62225722 A JP62225722 A JP 62225722A JP 22572287 A JP22572287 A JP 22572287A JP S6468969 A JPS6468969 A JP S6468969A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- thin film
- gate electrode
- film transistor
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 239000010408 film Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To manufacture a thin film transistor having smaller stray capacity and no dispersion by a method wherein a semiconductor layer is covered with a gate electrode through the intermediary of a gate insulating film while the gate electrode is provided to intersect with a specific source electrode and a drain electrode in the long direction. CONSTITUTION:A source electrode 103 and a drain electrode 102 are provided in parallel with each other at the distance of the channel length of a thin film transistor on an insulating substrate 101. The line width (mum) of these electrodes is represented by y<=(0.6 x +3)(1.2 x +6)/(w+6) where x and w respectively represent the length of substrate in the long direction and the channel width (mum) of the thin film transistor. Furthermore, a semiconductor layer 104 is covered with a gate electrode 106 intersecting with the source electrode 103 and the drain electrode 102 in the long direction through the intermediary of a gate insulating film 105. Thus, even if the gate electrode 106 is pattern-slipped in the arrow 505 or 506 directions, the overlapped space of the source electrode 103 and the drain electrode 102 with the gate electrode 106 can be kept constant. consequently, the pattern-slip of the gate electrode 106 do not have any effect on the stray capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62225722A JPH088361B2 (en) | 1987-09-09 | 1987-09-09 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62225722A JPH088361B2 (en) | 1987-09-09 | 1987-09-09 | Thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6468969A true JPS6468969A (en) | 1989-03-15 |
| JPH088361B2 JPH088361B2 (en) | 1996-01-29 |
Family
ID=16833790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62225722A Expired - Lifetime JPH088361B2 (en) | 1987-09-09 | 1987-09-09 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH088361B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05241194A (en) * | 1992-02-27 | 1993-09-21 | G T C:Kk | Active matrix liquid crystal display device |
-
1987
- 1987-09-09 JP JP62225722A patent/JPH088361B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05241194A (en) * | 1992-02-27 | 1993-09-21 | G T C:Kk | Active matrix liquid crystal display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH088361B2 (en) | 1996-01-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080129 Year of fee payment: 12 |