JPS59169151A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59169151A JPS59169151A JP4309983A JP4309983A JPS59169151A JP S59169151 A JPS59169151 A JP S59169151A JP 4309983 A JP4309983 A JP 4309983A JP 4309983 A JP4309983 A JP 4309983A JP S59169151 A JPS59169151 A JP S59169151A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- etching
- faster
- etching rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000005530 etching Methods 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000001020 plasma etching Methods 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4309983A JPS59169151A (ja) | 1983-03-17 | 1983-03-17 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4309983A JPS59169151A (ja) | 1983-03-17 | 1983-03-17 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59169151A true JPS59169151A (ja) | 1984-09-25 |
| JPH0563940B2 JPH0563940B2 (enrdf_load_stackoverflow) | 1993-09-13 |
Family
ID=12654385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4309983A Granted JPS59169151A (ja) | 1983-03-17 | 1983-03-17 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59169151A (enrdf_load_stackoverflow) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6212130A (ja) * | 1985-07-10 | 1987-01-21 | Sony Corp | 半導体装置の製造方法 |
| JPS6267825A (ja) * | 1985-09-20 | 1987-03-27 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体装置の表面を平坦化する方法 |
| JPS62102544A (ja) * | 1985-10-28 | 1987-05-13 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 多層金属絶縁体構造の形成方法 |
| JPS62176147A (ja) * | 1985-10-03 | 1987-08-01 | ビュル エス．アー． | 高密度集積回路の構成要素の相互接続用多層金属配線網の形成法及び本形成法によつて形成される集積回路 |
| JPS62265724A (ja) * | 1986-03-27 | 1987-11-18 | ゼネラル・エレクトリツク・カンパニイ | 誘電体エツチング停止材を用いたフレ−ムなしのビア開口形成法 |
| JPS63119534A (ja) * | 1986-11-08 | 1988-05-24 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH0276233A (ja) * | 1988-09-12 | 1990-03-15 | Hitachi Ltd | 半導体集積回路の製造方法 |
| US4966870A (en) * | 1988-04-14 | 1990-10-30 | International Business Machines Corporation | Method for making borderless contacts |
| JPH03154331A (ja) * | 1989-10-31 | 1991-07-02 | Internatl Business Mach Corp <Ibm> | 導電層形成方法 |
| US5141897A (en) * | 1990-03-23 | 1992-08-25 | At&T Bell Laboratories | Method of making integrated circuit interconnection |
| US5286674A (en) * | 1992-03-02 | 1994-02-15 | Motorola, Inc. | Method for forming a via structure and semiconductor device having the same |
| JPH09115888A (ja) * | 1995-10-13 | 1997-05-02 | Nec Corp | 半導体装置の製造方法 |
| US5702981A (en) * | 1995-09-29 | 1997-12-30 | Maniar; Papu D. | Method for forming a via in a semiconductor device |
| JP2000077526A (ja) * | 1998-08-27 | 2000-03-14 | Samsung Electronics Co Ltd | 半導体素子のコンタクトホ―ルの形成方法 |
| JP2000294631A (ja) * | 1999-04-05 | 2000-10-20 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US6768898B2 (en) | 1998-11-20 | 2004-07-27 | Murata Manufacturing Co., Ltd. | Composite high frequency component and mobile communication apparatus including the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5135292A (en) * | 1974-09-20 | 1976-03-25 | Matsushita Electric Ind Co Ltd | Handotaisochi oyobi sonoseizohoho |
| JPS5731155A (en) * | 1980-07-31 | 1982-02-19 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS588578A (ja) * | 1981-07-08 | 1983-01-18 | Kazutami Saito | 便槽水浄化循環装置 |
-
1983
- 1983-03-17 JP JP4309983A patent/JPS59169151A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5135292A (en) * | 1974-09-20 | 1976-03-25 | Matsushita Electric Ind Co Ltd | Handotaisochi oyobi sonoseizohoho |
| JPS5731155A (en) * | 1980-07-31 | 1982-02-19 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS588578A (ja) * | 1981-07-08 | 1983-01-18 | Kazutami Saito | 便槽水浄化循環装置 |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6212130A (ja) * | 1985-07-10 | 1987-01-21 | Sony Corp | 半導体装置の製造方法 |
| JPS6267825A (ja) * | 1985-09-20 | 1987-03-27 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体装置の表面を平坦化する方法 |
| JPS62176147A (ja) * | 1985-10-03 | 1987-08-01 | ビュル エス．アー． | 高密度集積回路の構成要素の相互接続用多層金属配線網の形成法及び本形成法によつて形成される集積回路 |
| JPS62102544A (ja) * | 1985-10-28 | 1987-05-13 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 多層金属絶縁体構造の形成方法 |
| JPS62265724A (ja) * | 1986-03-27 | 1987-11-18 | ゼネラル・エレクトリツク・カンパニイ | 誘電体エツチング停止材を用いたフレ−ムなしのビア開口形成法 |
| JPS63119534A (ja) * | 1986-11-08 | 1988-05-24 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US4966870A (en) * | 1988-04-14 | 1990-10-30 | International Business Machines Corporation | Method for making borderless contacts |
| JPH0276233A (ja) * | 1988-09-12 | 1990-03-15 | Hitachi Ltd | 半導体集積回路の製造方法 |
| JPH03154331A (ja) * | 1989-10-31 | 1991-07-02 | Internatl Business Mach Corp <Ibm> | 導電層形成方法 |
| US5141897A (en) * | 1990-03-23 | 1992-08-25 | At&T Bell Laboratories | Method of making integrated circuit interconnection |
| US5286674A (en) * | 1992-03-02 | 1994-02-15 | Motorola, Inc. | Method for forming a via structure and semiconductor device having the same |
| US5702981A (en) * | 1995-09-29 | 1997-12-30 | Maniar; Papu D. | Method for forming a via in a semiconductor device |
| JPH09115888A (ja) * | 1995-10-13 | 1997-05-02 | Nec Corp | 半導体装置の製造方法 |
| JP2000077526A (ja) * | 1998-08-27 | 2000-03-14 | Samsung Electronics Co Ltd | 半導体素子のコンタクトホ―ルの形成方法 |
| US6768898B2 (en) | 1998-11-20 | 2004-07-27 | Murata Manufacturing Co., Ltd. | Composite high frequency component and mobile communication apparatus including the same |
| JP2000294631A (ja) * | 1999-04-05 | 2000-10-20 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0563940B2 (enrdf_load_stackoverflow) | 1993-09-13 |
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